FDMA510PZ

Single P-Channel PowerTrench® MOSFET –20V, –7.8A, 30m: General Description Features This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. „ Max rDS(on) = 30m: at VGS = –4.5V, ID = –7.8A „ Max rDS(on) = 37m: at VGS = –2.5V, ID = –6.6A „ Max rDS(on) = 50m: at VGS = –1.8V, ID = –5.5A „ Max rDS(on) = 90m: at VGS = –1.5V, ID = –2.0A „ Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. „ HBM ESD protection level > 3KV typical (Note 3) „ Free from halogenated compounds and antimony oxides „ RoHS Compliant Pin 1 D D G Bottom Drain Contact Drain Source D D 1 6 D D 2 5 D G 3 4 S S D MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage VGS Gate to Source Voltage Parameter Drain Current ID -Continuous (Note 1a) -Pulsed PD TJ, TSTG Ratings –20 Units V ±8 V –7.8 A –24 Power Dissipation (Note 1a) 2.4 Power Dissipation (Note 1b) 0.9 Operating and Storage Junction Temperature Range W –55 to +150 °C Thermal Characteristics RTJA Thermal Resistance, Junction to Ambient (Note 1a) 52 RTJA Thermal Resistance, Junction to Ambient (Note 1b) 145 °C/W Package Marking and Ordering Information Device Marking 510 Device FDMA510PZ ©2009 Semiconductor Components Industries, LLC. October-2017, Rev.2 Package MicroFET 2X2 1 Reel Size 7’’ Tape Width 8mm Quantity 3000units Publication Order Number: FDMA510PZ/D FDMA510PZ Single P-Channel PowerTrench® MOSFET FDMA510PZ Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient –20 V ID = –250PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –16V, VGS = 0V –1 PA IGSS Gate to Source Leakage Current VGS = ±8V, VDS = 0V ±10 PA –1.5 V –13 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250PA, referenced to 25°C 3 VGS = –4.5V, ID = –7.8A 27 30 VGS = –2.5V, ID = –6.6A 34 37 VGS = –1.8V, ID = –5.5A 46 50 VGS = –1.5V, ID = –2.0A 60 90 VGS = –4.5V, ID = –7.8A ,TJ = 125°C 36 40 VDD = –5V, ID = –7.8A 26 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance –0.4 –0.7 mV/°C m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = –10V, VGS = 0V, f = 1MHz 1110 1480 pF 205 275 pF 185 280 pF 7 14 ns 9 18 ns 125 200 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = –10V, ID = –7.8A VGS = –4.5V, RGEN = 6: tf Fall Time 64 103 ns Qg Total Gate Charge 19 27 nC Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = –5V, ID = –7.8A VGS = –4.5V 2.1 nC 4.2 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge –2 VGS = 0V, IS = –2A IF = –7.8A, di/dt = 100A/Ps A –0.8 –1.2 V 66 106 ns 44 71 nC Notes: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 52°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 145°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 2 FDMA510PZ Single P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 24 20 -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.5 VGS = -4.5V VGS = -1.8V VGS = -2.5V 16 VGS = -2V 12 VGS = -1.5V 8 4 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 0 0 2 1 3 4 VGS = -1.5V VGS = -1.8V 2.0 VGS = -2V 1.5 VGS = -2.5V 1.0 0.5 0 12 16 20 24 -ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m:) 200 ID = -7.8A VGS = -4.5V rDS(on), DRAIN TO NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 8 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 150 ID = -7.8A 100 TJ = 125oC 50 TJ = 25oC 0 1.0 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 24 -IS, REVERSE DRAIN CURRENT (A) 10 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 20 -ID, DRAIN CURRENT (A) VGS = -4.5V PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX VDD = -5V 16 12 8 TJ = -55oC 4 TJ = 25oC 0 0.0 0.5 TJ = 150oC 1.0 1.5 2.0 2.5 VGS = 0V 1 TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDMA510PZ Single P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 ID = -7.8A Ciss CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 4.5 3.0 VDD = -3V VDD = -5V VDD = -7V 1.5 5 10 15 Coss f = 1MHz VGS = 0V 20 Figure 7. Gate Charge Characteristics 10 20 Figure 8. Capacitance vs Drain to Source Voltage 30 -1 10 -2 10 VDS = 0V 10 -ID, DRAIN CURRENT (A) -Ig, GATE LEAKAGE CURRENT(A) 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) -3 10 -4 10 TJ = 125oC -5 10 -6 10 -7 10 -8 100us 1ms 1 10ms THIS AREA IS LIMITED BY rDS(on) 0.1 TJ = 25oC 10 100ms SINGLE PULSE TJ = MAX RATED 1s RTJA = 145oC/W DC 10s TA = 25oC -9 10 0.01 0.1 -10 10 Crss 100 0.1 0.0 0 1000 0 3 6 9 12 15 1 60 10 -VDS, DRAIN to SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 400 SINGLE PULSE RTJA = 145oC/W 100 TA = 25oC VGS = -4.5V 10 1 0.5 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation www.onsemi.com 4 2 10 3 10 FDMA510PZ Single P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZTJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o RTJA = 145 C/W 1E-3 -4 10 -3 10 -2 10 -1 10 0 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve www.onsemi.com 5 1 10 2 10 3 10 FDMA510PZ Single P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMA510PZ Single P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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