FDMA3023PZ

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMA3023PZ Dual P-Channel PowerTrench® MOSFET -30 V, -2.9 A, 90 mΩ Features General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. „ Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A „ Max rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A „ Max rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A „ Max rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1.0 A „ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. „ HBM ESD protection level > 2 kV (Note 3) „ RoHS Compliant „ Free from halogenated compounds and antimony oxides PIN 1 S1 G1 D1 D1 D2 S1 11 66 D1 G1 2 2 55 G2 D2 3 4 S2 D2 G2 S2 3 4 MicroFET 2x2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Ratings -30 Units V ±8 V -2.9 -6 Power Dissipation (Note 1a) 1.4 Power Dissipation (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86 RθJA Thermal Resistance for Single Operation, Junction to Ambient (Note 1b) 173 RθJA Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c) 69 RθJA Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d) 151 °C/W Package Marking and Ordering Information Device Marking 323 Device FDMA3023PZ ©2013 Fairchild Semiconductor Corporation FDMA3023PZ Rev.C1 Package MicroFET 2X2 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDMA3023PZ Dual P-Channel PowerTrench® MOSFET July 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA -1.0 V -30 V -24 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C 3 VGS = -4.5 V, ID = -2.9 A 71 90 VGS = -2.5 V, ID = -2.6 A 97 130 VGS = -1.8 V, ID = -1.7 A 122 170 VGS = -1.5 V, ID = -1.0 A 151 240 VGS = -4.5 V, ID = -2.9 A, TJ = 125 °C 110 140 VDS = -5 V, ID = -2.9 A 10 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -0.4 -0.6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1 MHz 400 530 pF 55 70 pF 45 65 pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VDD = -15 V, ID = -1.0 A, VGS = -4.5 V, RGEN = 6 Ω 5 10 ns 4 10 ns ns td(off) Turn-Off Delay Time 62 100 tf Fall Time 18 33 ns Qg(TOT) Total Gate Charge 7.9 11 nC Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -15 V, ID = -2.9 A VGS = -4.5 V 0.9 nC 1.9 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2013 Fairchild Semiconductor Corporation FDMA3023PZ Rev.C1 VGS = 0 V, IS = -1.1 A -1.1 (Note 2) IF = -2.9 A, di/dt = 100 A/μs 2 A -0.8 -1.2 V 18 33 ns 6.6 13 nC www.fairchildsemi.com FDMA3023PZ Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. (b) RθJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RθJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation. (d) RθJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation. a)86 oC/W when mounted on a 1 in2 pad of 2 oz copper. b)173 oC/W when mounted on a minimum pad of 2 oz copper. c)69 oC/W when mounted on a 1 in2 pad of 2 oz copper. d)151 oC/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2013 Fairchild Semiconductor Corporation FDMA3023PZ Rev.C1 3 www.fairchildsemi.com FDMA3023PZ Dual P-Channel PowerTrench® MOSFET Notes: 6 VGS = -4.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 6 VGS = -3.5 V 5 VGS = -2.5 V 4 VGS = -1.8 V 3 VGS = -1.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2 1 0 0 0.5 1.0 1.5 2.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 5 VGS = -1.5 V 4 3 1 1 2 4 5 6 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 400 ID = -2.9 A VGS = -4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX SOURCE ON-RESISTANCE (mΩ) ID = -1.45 A 300 rDS(on), DRAIN TO NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3 -ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.2 1.0 200 TJ = 125 oC 100 0.8 0.6 -75 -50 TJ = 25 oC 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 6 10 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 5 -ID, DRAIN CURRENT (A) VGS = -4.5 V VGS = -3.5 V 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 VGS = -1.8 V VGS = -2.5 V 2 VDS = -5 V 4 3 TJ = 125 oC 2 TJ = 25 oC 1 TJ = 0 0.5 1.0 -55 oC 1.5 VGS = 0 V 1 TJ = 125 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.2 2.0 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2013 Fairchild Semiconductor Corporation FDMA3023PZ Rev.C1 4 1.2 www.fairchildsemi.com FDMA3023PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = -2.9 A 4 VDD = -10 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 5 VDD = -15 V 3 VDD = -20 V 2 1 Ciss 100 Coss 0 0 2 4 6 8 10 0.1 10 Qg, GATE CHARGE (nC) 1 30 Figure 8. Capacitance vs Drain to Source Voltage 10 -2 10 THIS AREA IS LIMITED BY rDS(on) 10 -ID, DRAIN CURRENT (A) VGS = 0 V -3 -4 10 -5 10 TJ = 125 oC -6 10 TJ = 25 oC -7 10 1 ms 1 10 ms 100 ms 0.1 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 173 oC/W -8 10 o DC TA = 25 C 0.01 0.01 -9 10 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics -Ig, GATE LEAKAGE CURRENT (A) Crss f = 1 MHz VGS = 0 V 0 3 6 9 12 15 0.1 1 10 100 200 -VDS, DRAIN to SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Gate Leakage vs Gate to Source Voltage Figure 10. Forward Bias Safe Operating Area 200 P(PK), PEAK TRANSIENT POWER (W) 100 VGS = -4.5 V SINGLE PULSE RθJA = 173 oC/W TA = 25 oC 10 1 0.5 -3 10 -2 10 -1 10 1 10 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2013 Fairchild Semiconductor Corporation FDMA3023PZ Rev.C1 5 www.fairchildsemi.com FDMA3023PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 IMPEDANCE, ZθJA NORMALIZED THERMAL 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o 0.01 0.005 -3 10 R θ JA = 173 C/W 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2013 Fairchild Semiconductor Corporation FDMA3023PZ Rev.C1 6 www.fairchildsemi.com FDMA3023PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMA3023PZ Dual P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-X06 ©2013 Fairchild Semiconductor Corporation FDMA3023PZ Rev.C1 ７ www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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