FDN335N
April 1999
FDN335N
N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features • • •
1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 Ω @ VGS = 2.5 V. Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications • DC/DC converter • Load switch
•
D
D
S
SuperSOT -3
TM
G
TA = 25°C unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
20
(Note 1a)
Units
V V A W °C
±8 1.7 8 0.5 0.46 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
335
©1999 Fairchild Semiconductor Corporation
Device
FDN335N
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
FDN335N Rev. C
FDN335N
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V
Min Typ
20 14
Max
Units
V mV/°C
Off Characteristics
1 100 -100
µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(ON)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C VGS = 4.5 V, ID = 1.7 A VGS = 4.5 V, ID = 1.7 A,TJ = 125°C VGS = 2.5 V, ID = 1.5 A VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 1.5 A
0.4
0.9 -3 0.055 0.079 0.078
1.5
V mV/°C
0.070 0.120 0.100
Ω
ID(on) gFS
8 7
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
310 80 40
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω
5 8.5 11 3
15 17 20 10 5
ns ns ns ns nC nC nC
VDS = 10 V, ID = 1.7 A, VGS = 4.5 V,
3.5 0.55 0.95
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A
(Note 2)
0.42 0.7 1.2
A V
Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
b) 270°C/W when mounted on a minimum pad.
FDN335N Rev. C
FDN335N
Typical Characteristics
10 VGS = 4.5V 3.5V 3.0V 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 2 1.8 1.6 2.5V 1.4 3.0V 1.2 1 0.8 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 3.5V 4.0V 4.5V VGS = 2.0V
ID, DRAIN CURRENT (A)
8
6 2.0V 4
2 1.5V 0
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.24 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 1.7A VGS = 4.5V
ID = 0.85A 0.2
1.4
0.16 0.12 TA = 125oC 0.08 0.04 0 TA = 25oC
1.2
1
0.8
0.6 -50 -25 0 25 50 75 100
o
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
10 125 C ID, DRAIN CURRENT (A) 8
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
TA = -55oC
25oC
VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC
6
4
2
0.001
0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDN335N Rev. C
FDN335N
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 1.7A 4
(continued)
500 VDS = 5V 10V CAPACITANCE (pF) 15V 400 CISS f = 1MHz VGS = 0 V
3
300
2
200
1
100
COSS CRSS
0 0 0.5 1 1.5 2 2.5 3 3.5 4 Qg, GATE CHARGE (nC)
0 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10ms 1 100ms 1s 10s DC 1ms
20 SINGLE PULSE 16 POWER (W) RθJA=270 C/W TA=25 C 12
o o
0.1
VGS = 4.5V SINGLE PULSE RθJA = 270oC/W TA = 25oC
8
4
0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.0001 0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
R θJA (t) = r(t) * RθJA R θJA = 270 °C/W
t1
t2
TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t2
0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300
0.001 0.0001
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design.
FDN335N Rev. C
SuperSOTTM-3 Tape and Reel Data and Package Dimensions
SSOT-3 Packaging Configuration: Figure 1.0
Customize Label
Antistatic Cover Tape
Conductive Embossed Carrier Tape
Human Readable Label
3P
SSOT-3 Std Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 3,000 7” Dia D87Z TNR 10,000 13”
3P
3P
3P
Pin 1
SSOT-3 Std Unit Orientation
343mm x 342mm x 64mm Intermediate box for D87Z Option Human Readable Label
187x107x183 343x343x64 9,000 0.0097 0.1230 20,000 0.0097 0.4150
Human Readable Label sample
Human Readable Label
SSOT-23 Tape Leader and Trailer Configuration: Figure 2.0
187mm x 107mm x 183mm Intermediate Box for Standard Option
Carrier Tape Cover Tape
Trailer Tape 160mm minimum
Components
Leader Tape 390mm minimum
December 1998, Rev. B
SuperSOTTM-3 Tape and Reel Data and Package Dimensions, continued
SSOT-3 Embossed Carrier Tape Configuration: Figure 3.0
T E1
P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type SSOT-3 (8mm)
A0
3.15 +/-0.10
B0
2.77 +/-0.10
W
8.0 +/-0.3
D0
1.55 +/-0.05
D1
1.00 +/-0.125
E1
1.75 +/-0.10
E2
6.25 min
F
3.50 +/-0.05
P1
4.0 +/-0.1
P0
4.0 +/-0.1
K0
1.30 +/-0.10
T
0.228 +/-0.013
Wc
5.2 +/-0.3
Tc
0.06 +/-02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
B0 20 deg maximum component rotation
0.5mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SSOT-3 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
7” Diameter Option
B Min Dim C See detail AA W3
Dim D min
13” Diameter Option
W2 max Measured at Hub DETAIL AA
Dimensions are in inches and millimeters
Tape Size
8mm
Reel Option
7” Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
2.165 55 4.00 100
Dim W1
0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0
Dim W2
0.567 14.4 0.567 14.4
Dim W3 (LSL-USL)
0.311 – 0.429 7.9 – 10.9 0.311 – 0.429 7.9 – 10.9
8mm
13” Dia
December 1998, Rev. B
SuperSOTTM-3 Tape and Reel Data and Package Dimensions, continued
SuperSOT™-3 (FS PKG Code 32)
1:1
Scale 1:1 on letter size paper
Di mensions shown below are in: inches [mil limeters]
Part Weight per unit (gram): 0.0097
September 1998, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™
DISCLAIMER
ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8
SyncFET™ TinyLogic™ UHC™ VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. D