FDN335N

FDN335N FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Applications 1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 Ω @ VGS = 2.5 V. • Low gate charge (3.5nC typical). • High performance trench technology for extremely low RDS(ON). • High power and current handling capability. • DC/DC converter • Load switch D D S TM SuperSOT -3 G G Absolute Maximum Ratings Symbol S TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage V ID Drain Current ±8 1.7 - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation TJ, Tstg A 8 (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range W -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 250 Thermal Resistance, Junction-to-Case (Note 1) 75 Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity 335 FDN335N 7’’ 8mm 3000 units 1999 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDN335N/D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA,Referenced to 25°C IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse IGSSR On Characteristics 20 V mV/°C 14 VDS = 16 V, VGS = 0 V 1 VGS = 8 V, VDS = 0 V 100 µA nA VGS = -8 V, VDS = 0 V -100 nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(ON) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 µA,Referenced to 25°C ID(on) On-State Drain Current VGS = 4.5 V, ID = 1.7 A VGS = 4.5 V, ID = 1.7 A,TJ = 125°C VGS = 2.5 V, ID = 1.5 A VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 1.5 A 0.4 0.9 1.5 0.055 0.079 0.078 V mV/°C -3 0.070 0.120 0.100 8 Ω A 7 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) VDS = 10 V, VGS = 0 V, f = 1.0 MHz 310 pF 80 pF 40 pF (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 5 15 ns 8.5 17 ns Turn-Off Delay Time 11 20 ns tf Turn-Off Fall Time 3 10 ns Qg Total Gate Charge 3.5 5 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 10 V, ID = 1.7 A, VGS = 4.5 V, 0.55 nC 0.95 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.7 0.42 A 1.2 V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 FDN335N Electrical Characteristics FDN335N Typical Characteristics VGS = 4.5V ID, DRAIN CURRENT (A) 2.5V 3.5V 8 2.2 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 6 2.0V 4 2 1.5V 0 VGS = 2.0V 2 1.8 1.6 2.5V 1.4 3.0V 1.2 3.5V 4.0V 4.5V 1 0.8 0 0.5 1 1.5 2 2.5 3 0 2 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 0.24 1.6 ID = 0.85A ID = 1.7A VGS = 4.5V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 1.2 1 0.8 0.6 0.2 0.16 0.12 TA = 125oC 0.08 TA = 25oC 0.04 0 -50 -25 0 25 50 75 100 125 150 1 2 o TJ, JUNCTION TEMPERATURE ( C) 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 TA = -55oC VDS = 5V 25oC IS, REVERSE DRAIN CURRENT (A) 10 o 125 C ID, DRAIN CURRENT (A) 6 ID, DRAIN CURRENT (A) 8 6 4 2 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01 0.001 0.0001 0 0 1 2 3 4 0 Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 1.4 (continued) 500 ID = 1.7A f = 1MHz VGS = 0 V VDS = 5V 4 400 10V 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 CISS 300 200 1 100 0 0 COSS CRSS 0 0.5 1 1.5 2 2.5 3 3.5 0 4 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 10 20 1ms RDS(ON) LIMIT SINGLE PULSE o RθJA=270 C/W 16 o 10ms TA=25 C 100ms 1s 10s DC VGS = 4.5V SINGLE PULSE RθJA = 270oC/W 0.1 POWER (W) 1 12 8 4 TA = 25oC 0.01 0 0.1 1 10 100 0.0001 0.001 VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) FDN335N Typical Characteristics 0.5 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.2 R θJA (t) = r(t) * RθJA R θJA = 270 °C/W 0.1 0.05 0.02 0.01 P(pk) t1 Single Pulse t2 0.005 TJ - TA = P * RθJA (t) 0.002 Duty Cycle, D = t1 /t2 0.001 0.0001 0.001 0.01 0.1 1 10 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. 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