FDS6670S

FDS6670S August 2001 FDS6670S 30V N-Channel PowerTrench® SyncFET ™ General Description The FDS6670S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features • 13.5 A, 30 V. RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V • • • Includes SyncFET Schottky body diode Low gate charge (24nC typical) High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability Applications • DC/DC converter • Motor drives D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed T A =25 oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W 13.5 50 2.5 1.2 1 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6670S Device FDS6670S Reel Size 13’’ Tape width 12mm Quantity 2500 units © 2001 Fairchild Semiconductor Corporation FDS6670S Rev E (W) FDS6670S Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR T A = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 1 mA ID = 1 mA, Referenced to 25°C VDS = 24 V, VGS = 20 V, VGS = –20 V, VGS = 0 V VDS = 0 V VDS = 0 V Min 30 Typ Max Units V Off Characteristics 24 500 100 –100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 1 mA ID = 1 mA, Referenced to 25°C VGS = 10 V, ID = 13.5 A VGS = 4.5 V, ID = 11.2 A VGS=10 V, ID = 13.5A, TJ=100°C VGS = 10 V, VDS = 10 V, VDS = 5 V ID = 13.5 A 1 2.2 –6.2 7 9.5 9 3 V mV/°C 9 12.5 12.5 mΩ ID(on) gFS 50 45 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 2674 751 254 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDS = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 11 10 44 23 20 20 70 37 34 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5 V ID = 13.5 A, 24 7.3 6 Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Notes: 1 . RθJA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a ) 50°C/W when mounted on a 1 in2 p ad of 2 oz copper b ) 105°C/W when mounted on a .04 in 2 p ad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 13.5A, diF/dt = 300 A/µs (Note 2) (Note 2) 3.5 0.4 0.5 26.8 47.2 0.7 A V nS nC (Note 3) FDS6670S Rev E (W) S cale 1 : 1 on letter size paper 2 . Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3 . See “SyncFET Schottky body diode characteristics” below. FDS6670S Rev E (W) FDS6670S Typical Characteristics 50 2.6 VGS = 10V 40 I D, DRAIN CURRENT (A) 6.0V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 4.0V 3.5V 2.2 VGS = 3.5V 30 1.8 4.0V 1.4 20 4.5V 6.0V 10 3.0V 1 10V 0 0 0.5 1 1.5 2 VD S, DRAIN-SOURCE VOLTAGE (V) 0.6 0 10 20 30 40 50 I D, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.025 RDS(ON) , ON-RESISTANCE (OHM) R DS(ON), NORMALIZED D RAIN-SOURCE ON-RESISTANCE 1.6 ID = 13.5A VGS = 10V 1.4 ID = 6.8A 0.02 1.2 0.015 1 TA = 125 C o 0.8 0.01 T A = 25 C o 0.6 -50 -25 0 25 50 o 75 100 0.005 2 4 6 8 10 V GS , GATE TO SOURCE VOLTAGE (V) T J, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 70 60 I D, DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 I S, REVERSE DRAIN CURRENT (A) VDS = 5V T A = -55 C 125 C o o 25 C o VGS = 0V 1 o 50 40 30 20 10 0 2 2.5 3 3.5 4 4.5 VGS , GATE TO SOURCE VOLTAGE (V) TA = 125 C o 25 C 0.1 -55 C 0.01 o 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6670S Rev E (W) FDS6670S Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID =13.5A 8 15V 6 VD S = 5V 10V CAPACITANCE (pF) 3600 3000 C ISS 2400 1800 1200 C OSS 600 CRSS 0 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 f = 1MHz VGS = 0 V 4 2 0 Qg , GATE CHARGE (nC) 25 30 VD S, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. ID , DRAIN CURRENT (A) RDS(ON) LIMIT 10 100µs 1ms 10ms 100ms 1s 10s DC 40 SINGLE PULSE RθJA = 125°C/W T A = 25°C 30 1 VGS = 10V SINGLE PULSE o R θJA = 125 C/W TA = 25 C 0.01 0.01 o 20 0.1 10 0.1 1 10 100 0 0.001 0.01 0.1 1 t1 , TIME (sec) 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RθJA(t) = r(t) + RθJA RθJA = 125 °C/W P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6670S Rev E (W) FDS6670S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6670S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) o 100 C 0.01 0.001 Current: 0.8A/div 25 C 0.0001 o 0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V) Time: 10.0ns/div Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDS6670S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6670A). Current: 0.8A/div Time: 10.0ns/div Figure 13. Non-SyncFET (FDS6670A) body diode reverse recovery characteristic. FDS6670S Rev E (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST ® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ® VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4