FDS6670AS

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  FDS6670AS 30V N-Channel PowerTrench SyncFET™ General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) The FDS6670AS and low gate charge. includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.  13.5 A, 30 V. RDS(ON) max= 9.0 m @ VGS = 10 V RDS(ON) max= 11.5 m @ VGS = 4.5 V  Includes SyncFET Schottky body diode  Low gate charge (27nC typical)  High performance trench technology for extremely low RDS(ON) and fast switching Applications  DC/DC converter  High power and current handling capability  Low side notebook  RoHS Compliant D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V ID Drain Current (Note 1a) 13.5 A PD Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 – Continuous – Pulsed 50 (Note 1c) TJ, TSTG W 1 –55 to +150 C (Note 1a) 50 C/W (Note 1) 25 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6670AS FDS6670AS 13’’ 12mm 2500 units ©2010 Fairchild Semiconductor Corporation FDS6670AS Rev.C1 1 www.fairchildsemi.com FDS6670AS 30V N-Channel PowerTrench® SyncFET™ July 2010 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS  TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 1 mA Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 A Gate–Body Leakage VGS = 20 V, VDS = 0 V 100 nA 3 V On Characteristics 30 V 27 ID = 10 mA, Referenced to 25C mV/C (Note 2) VGS(th) VGS(th)  TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 1 mA ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 13.5 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1 1.7 ID = 10 mA, Referenced to 25C –4 VGS = 10 V, ID = 13.5 A ID = 11.2 A VGS = 4.5 V, VGS=10 V, ID =13.5A, TJ=125C 7.5 9 10  mV/C 9 11.5 12.5 50 m A 66 S 1540 pF 440 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 160 Rg Gate Resistance 2.1 4.2  10 20 ns ns Switching Characteristics td(on) (Note 2) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time pF VDS = 15 V, VGS = 10 V, VDS = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6  ID = 1 A, RGEN = 6  5 10 27 44 ns 18 32 ns 13 23 ns 15 27 ns 24 38 ns 13 23 ns 27 38 nC 16 22 Qg(TOT) Total Gate Charge at Vgs=10V Qg Total Gate Charge at Vgs=5V Qgs Gate–Source Charge 4.2 nC Qgd Gate–Drain Charge 5.1 nC ©2010 Fairchild Semiconductor Corporation FDS6670AS Rev.C1 VDD = 15 V, 2 ID = 13.5 A, nC www.fairchildsemi.com FDS6670AS 30V N-Channel PowerTrench® SyncFET™ Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge Notes: 1. VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 13.5A, diF/dt = 300 A/µs (Note 2) 0.5 0.6 20 (Note 3) 15 (Note 2) 0.7 V nS nC RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. ©2010 Fairchild Semiconductor Corporation FDS6670AS Rev.C1 3 www.fairchildsemi.com FDS6670AS 30V N-Channel PowerTrench® SyncFET™ Electrical Characteristics 50 2.6 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V ID, DRAIN CURRENT (A) 4.0V 40 4.5V 6.0V 3.0V 30 20 10 2.5V 2.2 VGS = 3.0V 1.8 3.5V 1.4 4.5V 10V 0.6 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 0.025 ID = 13.5A VGS = 10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 1 0 1.2 1 0.8 0.6 ID = 6.75A 0.02 0.015 o TA = 125 C 0.01 o TA = 25 C 0.005 -50 -25 0 25 50 75 o TJ, JUNCTION TEMPERATURE ( C) 100 125 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 50 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 40 ID, DRAIN CURRENT (A) 4.0V 30 20 TA = 125oC o -55 C 10 25oC 0 1 TA = 125oC o 25 C 0.1 o -55 C 0.01 0.001 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 0 Figure 5. Transfer Characteristics. ©2010 Fairchild Semiconductor Corporation FDS6670AS Rev.C1 0.1 0.2 0.3 0.4 0.5 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.6 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4 www.fairchildsemi.com FDS6670AS 30V N-Channel PowerTrench ®SyncFET™ Typical Characteristics 2400 ID =13.5A f = 1MHz VGS = 0 V VDS = 10V 20V 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 6 4 1800 Ciss 1200 Coss 600 2 Crss 0 0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 0 30 Figure 7. Gate Charge Characteristics. 30 50 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 100 100 s 1ms 10ms 10 100ms 1s 10s DC 1 VGS = 10V SINGLE PULSE RJA = 125oC/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 5 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) * RJA RJA = 125 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. ©2010 Fairchild Semiconductor Corporation FDS6670AS Rev.C1 5 www.fairchildsemi.com FDS6670AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6670AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. CURRENT : 0.4A/div IDSS, REVERSE LEAKAGE CURRENT (A) 0.1 0.01 125oC 0.001 100oC 0.0001 25oC 0.00001 0 10 20 VDS, REVERSE VOLTAGE (V) 30 Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. TIME : 12.5ns/div Figure 12. FDS6670AS SyncFET body diode reverse recovery characteristic. CURRENT : 0.4A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6670A). TIME : 12.5ns/div Figure 13. Non-SyncFET (FDS6670A) body diode reverse recovery characteristic. ©2010 Fairchild Semiconductor Corporation FDS6670AS Rev.C1 6 www.fairchildsemi.com FDS6670AS 30V N-Channel PowerTrench® SyncFET™ Typical Characteristics (continued) AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax ESBC ® Fairchild® Fairchild Semiconductor® FACT Quiet Series FACT® FAST® FastvCore FETBench FlashWriter®* FPS F-PFS FRFET® SM Global Power Resource Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM OptoHiT™ OPTOLOGIC® OPTOPLANAR® ® PDP SPM™ Power-SPM PowerTrench® PowerXS™ Programmable Active Droop QFET® QS Quiet Series RapidConfigure  Saving our world, 1mW/W/kW at a time™ SignalWise SmartMax SMART START SPM® STEALTH SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS SyncFET Sync-Lock™ ® * The Power Franchise® TinyBoost TinyBuck TinyCalc TinyLogic® TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT* SerDes UHC® Ultra FRFET UniFET VCX VisualMax XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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