FDY3000NZ

FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET January 2006 FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. Features • 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 6 5 4 1 2 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C unless otherwise noted o S1 G1 D2 1 6 D1 2 3 5 4 G2 S2 Parameter Drain-Source Voltage Gate-Source Voltage – Continuous – Pulsed Power Dissipation (Steady State) Drain Current (Note 1a) Ratings 20 ± 12 600 1000 625 446 –55 to +150 Units V V mA mW °C (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 200 280 °C/W Package Marking and Ordering Information Device Marking C Device FDY3000NZ Reel Size 7 ’’ Tape width 8 mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDY3000NZ Rev A www.fairchildsemi.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Test Conditions VGS = 0 V, ID = 250 µA Min 20 Typ Max Units V Off Characteristics ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = ± 12 V, VDS = 0 V VGS = ± 4.5 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 600 mA VGS = 2.5 V, ID = 500 mA VGS = 1.8 V, ID = 150 mA VGS = 4.5 V, ID=600mA, TJ = 125°C VDS = 5 V, ID = 600 mA 0.6 1.0 –3 0.25 0.37 0.73 0.35 1.8 14 1 ± 10 ±1 1.5 mV/°C µA µA µA V mV/°C Ω On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance 0.70 0.85 1.25 1.00 gFS Ciss Coss Crss Forward Transconductance S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V, 60 20 10 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω 6 8 8 2.4 12 16 16 4.8 1.1 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 600 mA, 0.8 0.16 0.26 Drain–Source Diode Characteristics and Maximum Ratings Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 150 mA (Note 2) 0.7 8 1 1.2 V nS nC IF = 600 mA, dIF/dt = 100 A/µs Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design a) 200°C/W when 2 mounted on a 1in pad of 2 oz copper b) 280°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. FDY3000NZ Rev A www.fairchildsemi.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Typical Characteristics 1 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.5V ID, DRAIN CURRENT (A) 0.8 2.6 3.0V 2.5V 2.0V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 VGS = 2.0V 0.6 0.4 2.5V 3.0V 3.5V 4.5V 0.2 0 0 0.25 0.5 0.75 1 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 600mA VGS = 4.5V 1.4 ID = 300mA 0.9 0.8 0.7 0.6 TA = 125oC 0.5 0.4 0.3 0.2 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TA = 25oC 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 1 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 0.8 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 VGS = 0V 0.1 TA = 125oC 0.01 25oC -55oC 0.001 0.6 0.4 TA = 125oC 25oC -55oC 0.2 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDY3000NZ Rev A www.fairchildsemi.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 600mA 4 CAPACITANCE (pF) VDS = 5V 10V 3 15V 100 90 80 70 60 50 40 30 20 10 Crss 0 4 8 12 16 20 Coss Ciss f = 1MHz VGS = 0 V 2 1 0 0 0.2 0.4 0.6 0.8 1 Qg, GATE CHARGE (nC) 0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) 30 25 20 15 10 5 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) SINGLE PULSE RθJA = 280°C/W TA = 25°C 1 RDS(ON) LIMIT 10ms 100ms 10s 1ms 1s 0.1 VGS = 4.5V SINGLE PULSE RθJA = 280oC/W TA = 25oC 0.01 0.1 1 DC 10 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RθJA(t) = r(t) * RθJA RθJA =280 °C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.1 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY3000NZ Rev A www.fairchildsemi.com FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Dimensional Outline and Pad Layout 1.70 1.50 0.30 0.15 6 4 0.50 0.50 1.20 BSC 1.70 1.55 1.25 1.80 1 (0.20) 3 0.30 0.50 1.00 0.60 0.56 0.18 0.10 0.55 LAND PATTERN RECOMMENDATION SEE DETAIL A 0.35 BSC 0.20 BSC DETAIL A 0.10 0.00 SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY3000NZ Rev A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18