FDY3001NZ

FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. • 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.5 V Applications • ESD protection diode (note 3) • Li-Ion Battery Pack • RoHS Compliant 6 1 2 5 4 1 6 D1 G1 2 5 G2 D2 3 4 S2 3 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID Drain Current PD – Pulsed Power Dissipation (Steady State) – Continuous (Note 1a) 1a) (Note 1a) 1a) (Note 1b) 1 TJ, TSTG S1 Operating and Storage Junction Temperature Range Ratings Units 20 V V ± 12 200 mA 1000 625 446 mW –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) 200 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 1 280 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity D FDY3001NZ 7 ’’ 8 mm 3000 units 2006 Fairchild Semiconductor Corporation FDY3001NZ Rev A www.fairchildsemi.com FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET January 2006 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, On Characteristics VGS = 0 V, ID = 250 µA Min Typ Max Units 20 V 14 ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = ± 12 V, VDS = 0 V VGS = ± 4.5 V, VDS = 0 V mV/°C 1 ± 10 ±1 µA µA µA 1.5 V mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C 0.6 VGS = 4.5 V, ID = 200 mA VGS = 2.5 V, ID = 175 mA VGS = 1.8 V, ID = 150 mA ID = 20 mA VGS = 1.5 V VGS = 4.5 V, ID=200mA, TJ = 125°C VDS = 5 V, ID = 200 mA 1.0 –3 5 7 9 10 7 Ω 1.8 S 60 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 10 V, f = 1.0 MHz V GS = 0 V, 20 pF 10 pF (Note 2) VDD = 10 V, VGS = 4.5 V, VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 200 mA, 6 12 ns 8 16 ns 8 16 ns 2.4 4.8 ns 0.8 1.1 nC 0.16 nC 0.26 nC Drain–Source Diode Characteristics and Maximum Ratings VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 150 mA 0.7 (Note 2) IF = 200 mA, dIF/dt = 100 A/µs 1.2 V 8 nS 1 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user' s board design. a) 200°C/W when mounted on a 1in2 pad of 2 oz copper b) 280°C/W when mounted on a minimum pad of 2 oz copper paper Scale 1 : 1 on letter size 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. FDY3001NZ Rev A www.fairchildsemi.com FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Electrical Characteristics VGS = 4.5V 2.6 3.0V 2.5V ID, DRAIN CURRENT (A) 3.5V 0.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1 2.0V 0.6 0.4 0.2 2.4 VGS = 2.0V 2.2 2 1.8 1.6 2.5V 1.4 3.0V 1.2 0 0.25 0.5 0.75 0 1 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1 1.6 ID = 200mA VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 0.8 0 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 ID = 100mA 0.9 0.8 0.7 0.6 TA = 125oC 0.5 0.4 TA = 25oC 0.3 0.2 150 1 o 2 TJ, JUNCTION TEMPERATURE ( C) 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 IS, REVERSE DRAIN CURRENT (A) 1 VDS = 5V ID, DRAIN CURRENT (A) 3.5V 1 0.8 0.6 0.4 TA = 125oC 0.2 25oC -55oC VGS = 0V 0.1 TA = 125oC 0.01 25oC -55oC 0.001 0.0001 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. FDY3001NZ Rev A 2.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.fairchildsemi.com FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Typical Characteristics 100 ID = 200mA f = 1MHz VGS = 0 V 90 4 VDS = 5V 80 10V 3 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 15V 2 1 Ciss 70 60 50 40 Coss 30 20 10 0 Crss 0 0 0.2 0.4 0.6 0.8 1 0 4 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 16 20 30 1ms 1s DC VGS = 4.5V SINGLE PULSE RθJA = 280oC/W 0.1 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 1 10ms 100ms 10s TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 280°C/W TA = 25°C 25 20 15 10 5 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 12 Figure 8. Capacitance Characteristics. 10 ID, DRAIN CURRENT (A) 8 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA =280 °C/W 0.2 0.1 P(pk) 0.1 t1 0.05 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY3001NZ Rev A www.fairchildsemi.com FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Typical Characteristics 1.70 1.50 6 0.50 0.30 0.15 0.50 4 1.70 1.55 1.20 BSC 1 1.25 1.80 3 (0.20) 0.30 0.50 0.55 LAND PATTERN RECOMMENDATION 1.00 0.60 0.56 0.18 0.10 SEE DETAIL A 0.35 BSC 0.20 BSC 0.10 0.00 DETAIL A SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY3001NZ Rev A www.fairchildsemi.com FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Dimensional Outline and Pad Layout TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18