FDY300NZ

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This literature is subject to all applicable copyright laws and is not for resale in any manner. January 2007 FDY300NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. • 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V Applications • ESD protection diode (note 3) • Li-Ion Battery Pack • RoHS Compliant 1S G 1 G 3 S D 2 D Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID Drain Current – Continuous – Pulsed Power Dissipation (Steady State) PD (Note 1a) 1a) (Note 1a) 1a) (Note 1b) 1 TJ, TSTG Operating and Storage Junction Temperature Range Ratings Unit s 20 V V ± 12 600 1000 625 446 –55 to +150 mA mW °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) 200 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 1 280 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity C FDY300NZ 7 ’’ 8 mm 3000 units 2007 Fairchild Semiconductor Corporation FDY300NZ Rev B www.fairchildsemi.com FDY300NZ Single N-Channel 2.5V Specified PowerTrench MOSFET January 2007 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, On Characteristics VGS = 0 V, ID = 250 µA 20 V 15 ID = 250 µA, Referenced to 25°C mV/°C VDS = 16 V, VGS = 0 V VGS = ± 12 V, VDS = 0 V VGS = ± 4.5 V, VDS = 0 V 1 ± 10 ±1 µA µA µA 1.0 3 1.3 V mV/°C 0.24 0.36 0.70 0.35 1.8 0.70 0.85 1.25 1.00 Ω (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 600 mA VGS = 2.5 V, ID = 500 mA ID = 150 mA VGS = 1.8 V, VGS = 4.5 V, ID=600mA, TJ = 125°C VDS = 5 V, ID = 600 mA 0.6 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 10 V, f = 1.0 MHz V GS = 0 V, 60 pF 20 pF 10 pF (Note 2) VDD = 10 V, VGS = 4.5 V, VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 600 mA, 6 12 ns 8 16 ns 8 16 ns 2.4 4.8 ns 0.8 1.1 nC 0.16 nC 0.26 nC Drain–Source Diode Characteristics and Maximum Ratings VSD trr Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 150 mA IF = 600 mA, dIF/dt = 100 A/µs (Note 2) 0.7 1.2 8 1 V nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 200°C/W when mounted on a 1in2 pad of 2 oz copper b) 280°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. FDY300NZ Rev B www.fairchildsemi.com FDY300NZ Single N-Channel 2.5V Specified PowerTrench MOSFET Electrical Characteristics 1 2.6 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5V 3.5V 2.5V 0.8 2.0V 0.6 0.4 0.2 2.4 VGS = 2.0V 2.2 2 1.8 1.6 2.5V 1.4 3.0V 1.2 3.5V 4.5V 1 0.8 0 0 0.25 0.5 0.75 0 1 0.2 Figure 1. On-Region Characteristics. 0.8 1 0.9 ID = 600mA VGS = 4.5V ID = 300mA RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 0.8 0.7 0.6 TA = 125oC 0.5 0.4 0.3 TA = 25oC 0.2 150 1 2 o TJ, JUNCTION TEMPERATURE ( C) 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 VDS = 5V IS, REVERSE DRAIN CURRENT (A) 1.5 ID, DRAIN CURRENT (A) 0.4 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 25oC o TA = -55 C 1.2 125oC 0.9 0.6 0.3 VGS = 0V 0.1 TA = 125oC 0.01 25oC -55oC 0.001 0.0001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. FDY300NZ Rev B 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.fairchildsemi.com FDY300NZ Single N-Channel 2.5V Specified PowerTrench MOSFET Typical Characteristics 100 ID = 600mA f = 1MHz VGS = 0 V 90 4 80 VDS = 5V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 10V 3 15V 2 1 Ciss 70 60 50 40 Coss 30 20 10 0 Crss 0 0 0.2 0.4 0.6 0.8 1 0 4 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 16 20 30 P(pk), PEAK TRANSIENT POWER (W) 1ms RDS(ON) LIMIT 1 1s 10ms 100ms 10s DC 0.1 VGS = 4.5V SINGLE PULSE RθJA = 280oC/W TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 280°C/W TA = 25°C 25 20 15 10 5 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 12 Figure 8. Capacitance Characteristics. 10 ID, DRAIN CURRENT (A) 8 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA =280 °C/W 0.2 0.1 P(pk) 0.1 0.05 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY300NZ Rev B www.fairchildsemi.com 1000 FDY300NZ Single N-Channel 2.5V Specified PowerTrench MOSFET Typical Characteristics 1.70 1.50 0.50 0.35 0.25 0.50 3 1.70 1.50 0.98 0.78 1 1.80 1.14 2 (0.15) 0.50 0.50 0.66 LAND PATTERN RECOMMENDATION 1.00 0.78 0.58 0.43 0.28 0.20 0.04 SEE DETAIL A 0.54 0.34 0.10 0.00 DETAIL A SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY300NZ Rev B www.fairchildsemi.com FDY300NZ Single N-Channel 2.5V Specified PowerTrench MOSFET Dimensional Outline and Pad Layout TRADEMARKS The following are registered and unregistered tradem ark s F airc hild S em ic onduc tor owns or is authoriz ed to use and is not intended to b e an ex haustiv e list of all suc h tradem ark s. A C Ex ™ A c tiv eA rray ™ B ottom less™ B uild it N ow™ C oolF ET™ CROSSVOLT™ D O M E™ Ec oS P A R K ™ E2 C M O S ™ EnS igna™ F A C T® F A S T® F A S Tr™ FPS™ F R F ET™ F A C T Q uiet S eries™ G lob alO p toisolator™ G TO ™ H iS eC ™ I2 C ™ i-Lo ™ Im p liedD isc onnec t™ IntelliM A X ™ IS O P L A N A R ™ L ittleF ET™ M IC R O C O U P L ER ™ M ic roF ET™ M ic roP ak ™ M IC R O W IR E™ M SX™ M S X P ro™ A c ross the b oard. 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L ife sup p ort dev ic es or sy stem s are dev ic es or sy stem s whic h, (a) are intended for surgic al im p lant into the b ody , or (b ) sup p ort or sustain life, or (c ) whose failure to p erform when p rop erly used in ac c ordanc e with instruc tions for use p rov ided in the lab eling, c an b e reasonab ly ex p ec ted to result in signific ant injury to the user. 2. A c ritic al c om p onent is any c om p onent of a life sup p ort dev ic e or sy stem whose failure to p erform c an b e reasonab ly ex p ec ted to c ause the failure of the life sup p ort dev ic e or sy stem , or to affec t its safety or effec tiv eness. P RO DU C T STATU S DEF IN ITIO N S De fin itio n o f Te rm s Da ta s h e e t Id e n tific a tio n P ro d u c t Sta tu s De fin itio n A dv anc e Inform ation F orm ativ e or In D esign This datasheet c ontains the design sp ec ific ations for p roduc t dev elop m ent. S p ec ific ations m ay c hange in any m anner without notic e. P relim inary F irst P roduc tion This datasheet c ontains p relim inary data, and sup p lem entary data will b e p ub lished at a later date. F airc hild S em ic onduc tor reserv es the right to m ak e c hanges at any tim e without notic e in order to im p rov e design. N o Identific ation N eeded F ull P roduc tion This datasheet c ontains final sp ec ific ations. F airc hild S em ic onduc tor reserv es the right to m ak e c hanges at any tim e without notic e in order to im p rov e design. O b solete N ot In P roduc tion This datasheet c ontains sp ec ific ations on a p roduc t that has b een disc ontinued b y F airc hild sem ic onduc tor. The datasheet is p rinted for referenc e inform ation only . R ev . I22 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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