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FDY301NZ
Single N-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This Single N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = 2.5v.
• 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V
RDS(ON) = 7 Ω @ VGS = 2.5 V
Applications
• ESD protection diode (note 3)
• Li-Ion Battery Pack
• RoHS Compliant
1S
G 1
G
3
S
D
2
D
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
– Continuous
– Pulsed
Power Dissipation (Steady State)
PD
(Note 1a) 1a)
(Note 1a) 1a)
(Note 1b) 1
TJ, TSTG
Operating and Storage Junction Temperature
Range
Ratings
Units
20
V
V
± 12
200
1000
625
446
–55 to +150
mA
mW
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 1a)
200
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b) 1
280
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
D
FDY301NZ
7’’
8 mm
3000units
2006 Fairchild Semiconductor Corporation
FDY301NZ Rev A
www.fairchildsemi.com
FDY301NZ Single N-Channel 2.5V Specified PowerTrench MOSFET
January 2006
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage,
On Characteristics
VGS = 0 V,
Typ Max
Units
20
ID = 250 µA
V
14
ID = 250 µA, Referenced to 25°C
VDS = 16 V,
VGS = 0 V
VGS = ± 12 V, VDS = 0 V
VGS = ± 4.5 V, VDS = 0 V
mV/°C
1
± 10
±1
µA
µA
µA
1.5
V
mV/°C
5
7
9
10
7
Ω
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25
0.6
C
VGS = 4.5 V,
ID = 200 mA
ID = 175 mA
VGS = 2.5 V,
VGS = 1.8 V,
ID = 150 mA
ID = 20 mA
VGS = 1.5 V
VGS = 4.5 V, ID=200mA, TJ = 125°C
VDS = 5 V,
ID = 200 mA
2.8
1.1
S
60
pF
20
pF
10
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
(Note 2)
6
12
ns
8
16
ns
8
16
ns
Turn–Off Fall Time
2.4
4.8
ns
Qg
Total Gate Charge
0.8
1.1
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 10 V,
VGS = 4.5 V,
VDS = 10 V,
VGS = 4.5 V
ID = 1 A,
RGEN = 6 Ω
ID = 200 mA,
0.16
nC
0.26
nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 150 mA
IF = 200 mA,
dIF/dt = 100 A/µs
(Note 2)
0.7
1.2
V
12
nS
3
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
s board design.
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user'
a)
200°C/W when
2
mounted on a 1in pad
of 2 oz copper
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY301NZ Rev A
www.fairchildsemi.com
FDY301NZ Single N-Channel 2.5V Specified PowerTrench MOSFET
Electrical Characteristics
VGS = 4.5V
3.5V
3.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
1
2.5V
0.8
2.0V
0.6
1.8V
0.4
0.2
1.5V
0
0
0.25
0.5
0.75
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
VGS = 1.8V
2.0V
2.5V
3.0V
4.5V
0
1
0.2
Figure 1. On-Region Characteristics.
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.2
1
0.8
0.6
0
25
50
75
100
125
1
ID = 100mA
0.9
0.8
0.7
0.6
TA = 125oC
0.5
0.4
TA = 25oC
0.3
0.2
150
1
o
2
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1.5
1
25oC
TA = -55oC
1.2
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
0.8
1
1.4
-25
0.6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
ID = 200mA
VGS = 4.5V
-50
0.4
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.6
3.5V
o
125 C
0.9
0.6
0.3
VGS = 0V
0.1
TA = 125oC
0.01
25oC
-55oC
0.001
0.0001
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
FDY301NZ Rev A
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
www.fairchildsemi.com
FDY301NZ Single N-Channel 2.5V Specified PowerTrench MOSFET
Typical Characteristics
100
ID = 600mA
f = 1MHz
VGS = 0 V
90
4
80
VDS = 5V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
10V
3
15V
2
1
Ciss
70
60
50
40
Coss
30
20
10
0
Crss
0
0
0.2
0.4
0.6
0.8
1
0
4
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
16
20
30
1ms
10ms
100ms
1s 10s
DC
VGS = 4.5V
SINGLE PULSE
RθJA = 280oC/W
0.1
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
1
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 280°C/W
TA = 25°C
25
20
15
10
5
0
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
12
Figure 8. Capacitance Characteristics.
10
ID, DRAIN CURRENT (A)
8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA =280 °C/W
0.2
0.1
P(pk)
0.1
0.05
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDY301NZ Rev A
www.fairchildsemi.com
1000
FDY301NZ Single N-Channel 2.5V Specified PowerTrench MOSFET
Typical Characteristics
1.70
1.50
0.50
0.35
0.25
0.50
3
1.70
1.50
0.98
0.78
1
1.80
1.14
2
(0.15)
0.50
0.50
0.66
LAND PATTERN RECOMMENDATION
1.00
0.78
0.58
0.43
0.28
0.20
0.04
SEE DETAIL A
0.54
0.34
0.10
0.00
DETAIL A
SCALE 2 : 1
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC89 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
FDY301NZ Rev A
www.fairchildsemi.com
FDY301NZ Single N-Channel 2.5V Specified PowerTrench MOSFET
Dimensional Outline and Pad Layout
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not intended to be an exhaustive list of all such trademarks.
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As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
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systems which, (a) are intended for surgical implant into
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the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
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Advance Information
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This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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