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FGH75N60UFTU

FGH75N60UFTU

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    FGH75N60UFTU - 600V, 75A Field Stop IGBT - Fairchild Semiconductor

  • 数据手册
  • 价格&库存
FGH75N60UFTU 数据手册
FGH75N60UF 600V, 75A Field Stop IGBT April 2009 FGH75N60UF 600V, 75A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A • High Input Impedance • Fast Switching • RoHS Compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential. Applications • Induction Heating, UPS, SMPS, PFC E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ T C = 2 5oC @ TC = 100oC @ T C = 25 C @ T C = 2 5oC @ TC = 100 C o o Ratings 600  20 150 75 225 452 181 -55 to +150 -55 to +150 300 Units V V A A A W W o o o C C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.276 40 Units o o C/W C/W ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH75N60UF Rev. A1 FGH75N60UF 600V, 75A Field Stop IGBT Package Marking and Ordering Information Device Marking FGH75N60UF Device FGH75N60UFTU Package TO-247 Packaging Type Tube Max Qty Qty per Tube 30ea per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES BVCES TJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 - 0.75 - 250 ±400 V V/oC A nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 75A, VGE = 15V IC = 75A, VGE = 15V, TC = 125oC 4.0 5.0 1.9 2.15 6.5 2.4 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 3850 375 147 pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 400V, IC = 75A, VGE = 15V VCC = 400V, IC = 75A, RG = 3, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, IC = 75A, RG = 3, VGE = 15V, Inductive Load, TC = 25oC 27 70 128 30 3.05 1.35 4.4 27 74 153 35 3.6 1.8 5.4 250 30 130 80 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC FGH75N60UF Rev. A1 2 www.fairchildsemi.com FGH75N60UF 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 225 TC = 25 C o Figure 2. Typical Output Characteristics 225 TC = 125 C o Collector Current, IC [A] 10V Collector Current, IC [A] 180 20V 15V 12V 20V 15V 12V 10V 180 135 135 90 VGE = 8V 90 VGE = 8V 45 45 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6 0 0.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 Figure 3. Typical Saturation Voltage Characteristics 225 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 225 Collector Current, IC [A] Collector Current, IC [A] 180 TC = 25 C TC = 125 C o o 100 Common Emitter VCE = 20V TC = 25 C TC = 125 C o o 135 90 10 45 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 1 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.6 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = -40 C o 3.0 150A 16 12 2.4 75A 8 1.8 IC = 40A 4 75A IC = 40A 150A 1.2 25 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGH75N60UF Rev. A1 3 www.fairchildsemi.com FGH75N60UF 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25 C o Figure 8. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o Collector-Emitter Voltage, VCE [V] 16 16 12 12 8 150A 8 75A IC = 40A 150A 4 75A IC = 40A 4 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Capacitance Characteristics 8000 Common Emitter VGE = 0V, f = 1MHz TC = 25 C o Figure 10. Gate charge Characteristics 15 Common Emitter o Gate-Emitter Voltage, VGE [V] TC = 25 C 6000 Capacitance [pF] 12 200V VCC = 100V 300V Cies 9 4000 Coes 6 2000 Cres 3 0 1 10 Collector-Emitter Voltage, VCE [V] 30 0 0 50 100 150 200 Gate Charge, Qg [nC] 250 Figure 11. SOA Characteristics 500 10s Figure 12. Load Current vs. Frequency 140 VCC = 400V load Current : peak of square wave Load Current [A] 100 Collector Current, Ic [A] 100s 120 100 80 60 40 20 1 10 100 Frequency [kHz] 1000 Duty cycle : 50% T = 100 C C o 10 1ms 10 ms 1 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature DC 0.1 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 Powe Dissipation = 181W FGH75N60UF Rev. A1 4 www.fairchildsemi.com FGH75N60UF 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance 200 Figure 14. Turn-off Characteristics vs. Gate Resistance 10000 Common Emitter VGE = 15V, RG = 5 100 Switching Time [ns] TC = 25 C o Switching Time [ns] tr 1000 TC = 125 C o td(off) td(on) Common Emitter VCC = 400V, VGE = 15V IC = 75A TC = 25 C TC = 125 C o o 100 tf 10 0 10 20 30 40 Gate Resistance, RG [] 50 10 0 10 20 30 40 50 Collector Current, IC [A] Figure 15. Turn-on Characteristics vs. Collector Current 1000 Common Emitter VGE = 15V, RG = 5 TC = 25 C o Figure 16. Turn-off Characteristics vs. Collector Current 1000 tr td(off) Switching Time [ns] Switching Time [ns] 100 TC = 125 C o 100 tf td(on) 10 10 Common Emitter VGE = 15V, RG = 5 TC = 25 C TC = 125 C o o 1 0 30 60 90 120 Collector Current, IC [A] 150 1 0 30 60 90 120 150 Collector Current, IC [A] Figure 17. Switching Loss vs. Gate Resistance 10 Common Emitter VCC = 400V, VGE = 15V Figure 18. Switching Loss vs. Collector Current 100 Common Emitter VGE = 15V, RG = 5 TC = 25 C o o 8 Switching Loss [mJ] IC = 75A o 6 TC = 125 C Eon Switching Loss [mJ] TC = 25 C o 10 TC = 125 C Eon 4 Eoff Eoff 1 2 0 0 10 20 30 40 50 0.1 0 30 60 90 120 150 Gate Resistance, RG [] Collector Current, IC [A] FGH75N60UF Rev. A1 5 www.fairchildsemi.com FGH75N60UF 600V, 75A Field Stop IGBT Typical Performance Characteristics Figure 19. Turn off Switching SOA Characteristics 500 Collector Current, IC [A] 100 10 Safe Operating Area VGE = 15V, TC = 125 C o 1 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 20. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0.1 0.5 0.2 0.1 0.05 0.01 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGH75N60UF Rev. A1 6 www.fairchildsemi.com FGH75N60UF 600V, 75A Field Stop IGBT Mechanical Dimensions TO-247AB (FKS PKG CODE 001) Dimensions in Millimeters FGH75N60UF Rev. A1 7 www.fairchildsemi.com FGH75N60UF 600V, 75A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or it s global subsid iaries, and is not intended to be an exhaustive list of all such trademarks. The Power Franchise® P owerTrench ® Auto-SPM F-PFS  P owerXS™ FRFET® Build it Now SM Programmable Active Droop  Global Power Resource CorePLUS  Q FET® Green FPS  CorePOWER TinyBoost QS Green FPS  e-Series CROSSVOLT TinyBuck Q uiet Series ® CTL™ Gmax™ TinyLogic RapidConfigure Current Transfer Logic™ GTO  TINYOPTO EcoSPAR K® IntelliMAX TinyPower EfficentMax™ ISOPLANAR ™ TinyPWM EZSWITCH™* MegaBuck™ S aving our world, 1mW/W/k W at a time™ TinyWire ™* MICROCOUPLER SmartMax™ TriFault Detect MicroFET SMART START TRUECURR ENT * ® ® MicroPak S PM  SerDes MillerDrive™ S TEALTH™ ® Fairchild MotionMax™ SuperFET Fairchild Semiconductor® Motion-SPM™ S uperSOT-3 ® UHC® FACT Quiet Series™ OPTOLOGIC SuperSOT-6 ® ® Ultra FRFET FACT OPTOPLANAR SuperSOT-8 ® UniFET ® FAST SupreMOS™ V CX FastvCore  SyncFET™ V isualMax FETBench PDP SPM™ Sync-Lock™ XS™ ® FlashWriter® * Power-SPM * FPS  * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeit ing of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFIN ITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. R ev. I40 8 www.fairchildsemi.com FGH75N60UF Rev. A1
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