FGH75N60UFTU

IGBT - Field Stop 600 V, 75 A FGH75N60UF Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • • • • • High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 75 A High Input Impedance Fast Switching This Device is Pb−Free and is RoHS Compliant www.onsemi.com VCES IC 600 V 75 A C G Applications • Solar Inverters, UPS, Welder, PFC E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH75N60 UF $Y &Z &3 &K FGH75N60UF = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 March, 2020 − Rev. 2 1 Publication Order Number: FGH75N60UF/D FGH75N60UF ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ±20 V Transient Gate−to−Emitter Voltage ±30 V TC = 25°C 150 A TC = 100°C 75 A Pulsed Collector Current TC = 25°C 225 A Maximum Power Dissipation TC = 25°C 452 W TC = 100°C 181 W Operating Junction Temperature −55 to +150 °C Storage Temperature Range −55 to +150 °C 300 °C IC ICM (Note 1) PD TJ TSTG TL Description Collector Current Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol RqJC (IGBT) RqJA Parameter Typ. Max. Unit Thermal Resistance, Junction to Case − 0.276 _C/W Thermal Resistance, Junction to Ambient − 40 _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH75N60UFTU FGH75N60UF TO−247 Tube N/A N/A 30ea www.onsemi.com 2 FGH75N60UF ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGE = 0 V, IC = 250 mA 600 − − V VGE = 0 V, IC = 250 mA − 0.75 − V/°C OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage DBVCES / DTJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA 4.0 5.0 6.5 V ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 250 mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 75 A, VGE = 15 V, − 1.9 2.4 V IC = 75 A, VGE = 15 V, TC = 125°C − 2.15 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 3850 − pF − 375 − pF − 147 − pF − 27 − ns − 70 − ns Turn−Off Delay Time − 128 − ns Fall Time − 30 80 ns Eon Turn−On Switching Loss − 3.05 − mJ Eoff Turn−Off Switching Loss − 1.35 − mJ Ets Total Switching Loss − 4.4 − mJ Td(on) Turn−On Delay Time − 27 − ns DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Tr Turn−On Delay Time Rise Time VCC = 400 V, IC = 75 A, RG = 3 W, VGE = 15 V, Inductive Load, TC = 175°C − 74 − ns Turn−Off Delay Time − 153 − ns Fall Time − 35 − ns Eon Turn−On Switching Loss − 3.6 − mJ Eoff Turn−Off Switching Loss − 1.08 − mJ Ets Total Switching Loss − 5.4 − mJ Qg Total Gate Charge − 250 − nC Qge Gate to Emitter Charge − 30 − nC Qgc Gate to Collector Charge − 130 − nC Td(off) Tf Rise Time VCC = 400 V, IC = 75 A, RG = 3 W, VGE = 15 V, Inductive Load, TC = 25°C VCE = 400 V, IC = 75 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH75N60UF TYPICAL PERFORMANCE CHARACTERISTICS 225 225 o 15V 20V 180 12V Collector Current, IC (A) Collector Current, IC (A) TC = 25 C 10V 135 90 VGE = 8V 45 0 0 1 2 3 4 o TC = 125 C 12V 180 10V 135 90 VGE = 8V 45 5 0 0.0 6 Collector−Emitter Voltage, VCE (V) 1.5 3.0 4.5 6.0 Collector−Emitter Voltage, VCE (V) Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 225 225 Common Emitter VGE = 15V Collector Current, IC (A) Collector Current, IC (A) 15V 20V o 180 TC = 25 C o TC = 125 C 135 90 Common Emitter VCE = 20V 100 o TC = 25 C o TC = 125 C 10 45 0 0 1 2 3 1 4 2 Collector−Emitter Voltage, VCE (V) Figure 3. Typical Saturation Voltage Characteristics 3.0 150A 2.4 75A 1.8 IC = 40A 50 8 20 Common Emitter VGE = 15V 1.2 25 6 75 100 10 12 Figure 4. Transfer Characteristics Collector−Emitter Voltage, VCE (V) Collector−Emitter Voltage, VCE (V) 3.6 4 Gate−Emitter Voltage,VGE (V) TC = −40 oC 16 12 8 4 150A 75A IC = 40A 0 125 Common Emitter 0 4 8 12 16 20 Gate−Emitter Voltage, VGE (V) Case Temperature, TC (5C) Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 FGH75N60UF 20 Common Emitter o TC = 25 C 16 12 8 150A 4 75A IC = 40A 0 0 4 8 12 16 20 Collector−Emitter Voltage, VCE (V) Collector−Emitter Voltage, VCE (V) TYPICAL PERFORMANCE CHARACTERISTICS (Continued) o TC = 125 C 16 12 8 IC = 40A 0 20 4 12 16 20 Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 15 Gate−Emitter Voltage, VGE (V) TC = 25 C 6000 Cies 4000 Coes 2000 Cres 1 10 Common Emitter o TC = 25 C 12 200V VCC = 100V 9 3 0 30 0 50 140 Collector Current, IC (A) 100 ms 1ms 10 ms DC Single Nonrepetitive 0.1 Pulse TC=255C Curves must be detated linearly with increase in temperature 1 10 200 250 VCC = 400V load Current : peak of square wave 10 ms 1 150 Figure 10. Gate Charge Characteristics 500 10 100 Gate Charge, Qg(nC) Figure 9. Capacitance Characteristics 100 300V 6 Collector−Emitter Voltage, VCE (V) Collector Current, IC (A) 8 Gate−Emitter Voltage, VGE (V) o Capacitance (pF) 0 Gate−Emitter Voltage, VGE (V) Common Emitter VGE = 0V, f = 1MHz 0.01 150A 75A 4 8000 0 Common Emitter 120 100 80 60 Duty cycle : 50% 40 o T = 100 C C 100 20 1000 Collector−Emitter Voltage, VCE (V) Powe Dissipation = 181W 1 10 100 1000 Frequency, f (kHz) Figure 11. SOA Characteristics Figure 12. Load Current vs. Frequency www.onsemi.com 5 FGH75N60UF TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 200 10000 Common Emitter VGE = 15V, RG = 5 W o TC = 25 C 100 td(off) Switching Time (ns) Switching Time (ns) o tr Common Emitter VCC = 400V, VGE = 15V IC = 75A td(on) o TC = 25 C TC = 125 C 1000 100 tf o TC = 125 C 10 0 10 20 30 40 10 50 0 10 Gate Resistance, RG (W) Figure 13. Turn−on Characteristics vs. Gate Resistance 1000 40 50 1000 o TC = 25 C td(off) tr o TC = 125 C Switching Time (ns) Switching Time (ns) 30 Figure 14. Turn−off Characteristics vs. Gate Resistance Common Emitter VGE = 15V, RG = 5 W 100 20 Collector Current, IC (A) td(on) 10 100 tf 10 Common Emitter VGE = 15V, RG = 5 W o TC = 25 C o TC = 125 C 1 0 30 60 90 120 1 150 0 30 Figure 15. Turn−on Characteristics vs. Collector Current 100 Common Emitter VGE = 15V, RG = 5 W IC = 75A TC = 25 C TC = 25 C Eon o TC = 125 C 4 Eoff 2 0 150 o 10 20 30 40 TC = 125 C 10 Eoff 1 0.1 50 Eon o Switching Loss, (mJ) Switching Loss (mJ) Common Emitter VCC = 400V, VGE = 15V o 0 120 Figure 16. Turn−off Characteristics vs. Collector Current 10 6 90 Collector Current, IC (A) Collector Current, IC (A) 8 60 0 30 60 90 120 150 Collector Current, IC (A) Gate Resistance, RG (W) Figure 17. Switching Loss vs. Gate Resistance Figure 18. Switching Loss vs. Collector Current www.onsemi.com 6 FGH75N60UF TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 100 10 Safe Operating Area o 1 VGE = 15V, TC = 125 C 1 10 100 1000 Collector−Emitter Voltage, VCE (V) Figure 19. Turn off Switching SOA Characteristics 1 Thermal Response (Zthjc) Collector Current, IC (A) 500 0.1 0.5 0.2 0.1 0.01 0.05 0.02 0.01 PDM t1 single pulse 1E−3 1E−5 1E−4 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E−3 0.01 0.1 1 Rectangular Pulse Duration (sec) Figure 20. Transient Thermal Impedance of IGBT www.onsemi.com 7 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 1 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative