MW6IC1940GNBR1

Freescale Semiconductor Technical Data Document Number: MW6IC1940N--1 Rev. 3.1, 12/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940GNB wideband integrated circuit is designed with on--chip matching that makes it usable from 1920 to 2000 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. MW6IC1940GNBR1 ARCHIVE INFORMATION VDS1 RFin RFout/VDS2 GND VDS1 NC NC NC RFin NC VGS1 VGS2 VDS1 GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC 14 RFout / VDS2 VGS1 VGS2 VDS1 Quiescent Current Temperature Compensation (1) 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. © Freescale Semiconductor, Inc., 2006--2009. All rights reserved. MW6IC1940GNBR1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Final Application 1920-2000 MHz, 40 W, 28 V 2 x W-CDMA • Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 200 mA, IDQ2 = 440 mA, Pout = 4.5 Watts Avg., f = 1922.5 MHz, Channel Bandwidth = RF LDMOS WIDEBAND 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. INTEGRATED POWER AMPLIFIER Power Gain — 28.5 dB Power Added Efficiency — 13.5% IM3 @ 10 MHz Offset — --43 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — - 46 dBc in 3.84 MHz Bandwidth Driver Applications • Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 200 mA, IDQ2 = 350 mA, Pout = 26 dBm, Full Frequency Band (1920--2000 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 27 dB IM3 @ 10 MHz Offset — --59 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — - 62 dBc in 3.84 MHz Bandwidth • Capable of Handling 3:1 VSWR, @ 28 Vdc, 1960 MHz, 40 Watts CW Output Power CASE 1329A-04 TO-272 WB-16 GULL • Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 20 W CW Pout. PLASTIC Features • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters • On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Input Power (1,2) Symbol VDSS VGS Tstg TC TJ Pin Value --0.5, +68 --0.5, +6 --65 to +150 150 225 20 Unit Vdc Vdc °C °C °C dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case W--CDMA Application (Pout = 4.5 W Avg.) Stage 1, 28 Vdc, IDQ1 = 200 mA Stage 2, 28 Vdc, IDQ2 = 440 mA Symbol RθJC Value (2,3) 2.1 1.2 Unit °C/W ARCHIVE INFORMATION Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1B (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 1920--2000 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 200 mA, IDQ2 = 440 mA, Pout = 4.5 W Avg., f1 = 1922.5 MHz, f2 = 1932.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Power Added Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss Gps PAE IM3 ACPR IRL 26 12.5 — — — 28.5 13.5 --43 --46 --15 31.5 — --40 --43 --10 dB % dBc dBc dB 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) MW6IC1940GNBR1 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Video Bandwidth @ 40 W PEP Pout where IM3 = --30 dBc (Tone Spacing from 100 kHz to VBW) ∆IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz