MG06400D-BN4MM

Power Module 600V IGBT Family MG06400D-BN4MM Series 400A Dual IGBT RoHS ® Features • H  igh short circuit capability, self limiting short circuit current • F  ree wheeling diodes with fast and soft reverse recovery • V  CE(sat) with positive temperature coefficient • Low switching losses • F  ast switching and short tail current Applications Agency Approvals AGENCY AGENCY FILE NUMBER • Motor drives • SMPS and UPS • Inverter • Welder • Converter • Induction Heating E71639 Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max. Junction Temperature TJ max) TJ op Operating Temperature -40 Tstg Storage Temperature Visol Insulation Test Voltage AC, t=1min Comparative Tracking Index Module case exposed to 0.1% ammonium chloride solution per UL and IEC standards 350 Torque Module-to-Sink Recommended (M6) 3 Torque Module Electrodes Recommended (M6) 2.5 CTI -40 Weight Max Unit 175 °C 150 °C 125 °C 3000 V V 5 N·m 5 N·m 320 g Values Unit Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions VCES Collector - Emitter Voltage TJ=25°C VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT IGBT 600 V ±20 V TC=25°C 500 A TC=70°C 400 A tp=1ms 800 A 1250 W TJ=25°C 600 V TC=25°C 500 A TC=70°C 400 A tp=1ms 800 A TJ =125°C, t=10ms, VR=0V 10000 A2s Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG06400D-BN4MM 1 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14 Power Module 600V IGBT Family Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min 4.9 Typ Max Unit 5.8 6.5 V IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=6.4mA VCE(sat) Collector - Emitter Saturation Voltage IC=400A, VGE=15V, TJ=25°C 1.45 IC=400A, VGE=15V, TJ=125°C 1.6 ICES Collector Leakage Current IGES Gate Leakage Current RGint Intergrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) VCE=600V, VGE=0V, TJ=25°C VCE=600V, VGE=0V, TJ=125°C VCE=0V,VGE=±15V, TJ=125°C VCE=300V, IC=400A , VGE=±15V VCE=25V, VGE=0V, f =1MHz Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time VCC=300V IC=400A RG =1.5Ω tf Fall Time Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current VGE=±15V Inductive Load -400 V 1.0 mA 5 mA 400 μA 1.0 Ω 4.3 μC 26 nF 0.76 nF TJ =25°C 110 ns TJ =125°C 120 ns TJ =25°C 50 ns TJ =125°C 60 ns TJ =25°C 490 ns TJ =125°C 520 ns TJ =25°C 60 ns TJ =125°C 70 ns TJ =25°C 2.1 mJ TJ =125°C 3.2 mJ TJ =25°C 12 mJ TJ =125°C 15 mJ 2000 A tpsc≤6μS , VGE=15V TJ=125°C,VCC=360V Junction-to-Case Thermal Resistance (Per IGBT) RthJC V 0.12 K/W Diode Forward Voltage VF IF=400A , VGE=0V, TJ =25°C 1.55 IF=400A , VGE=0V, TJ =125°C 1.50 V V A IRRM Max. Reverse Recovery Current IF=400A , VR=300V 330 Qrr Reverse Recovery Charge diF/dt=-7000A/μs 29.0 μC Erec Reverse Recovery Energy TJ=125°C 7.4 mJ RthJCD Junction-to-Case Thermal Resistance (Per Diode) MG06400D-BN4MM 0.22 2 K/W ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14 Power Module 600V IGBT Family Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics 800 800 VGE =15V 640 480 TVj=25°C IC (A) IC (A) 640 320 480 TVj =125°C 320 TVj=125°C 160 160 0 0 0.4 0.8 1.2 1.6 VCE˄V˅ 2.0 0 2.4 Figure 3: T  ypical Transfer characteristics 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE˄V˅ Figure 4: Switching Energy vs. Gate Resistor 800 60 VCE =20V VCC=300V IC=400A VGE=±15V TVj =125°C 50 640 480 Eon Eoff (mJ) IC (A) TVj =25°C 320 TVj =125°C 160 0 Eon 30 20 Eoff 10 5 6 7 9 8 VGE˄V˅ 10 0 11 Figure 5: Switching Energy vs. Collector Current 40 32 6 10 RG˄Ω˅ 14 18 800 600 Eoff 16 Eon 8 MG06400D-BN4MM 2 1000 VCC=300V RG=1.5Ω VGE=±15V TVj =125°C 24 0 0 0 Figure 6: R  everse Biased Safe Operating Area IC (A) Eon Eoff (mJ) 40 200 400 IC˄A˅ 600 400 RG=1.5Ω VGE=±15V TVj =125°C 200 0 800 3 0 100 200 300 400 VCE˄V˅ 500 600 700 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14 Power Module 600V IGBT Family Figure 7: Diode Forward Characteristics 800 12 640 10 Erec (mJ) TVj =125°C 480 IF (A) Figure 8: S  witching Energy vs. Gate Resistort 320 IF=400A VCE=300V TVj =125°C 8 6 4 160 0 TVj =25°C 0 0.8 1.2 VF˄V˅ 0.4 1.6 2 0 2.0 4 6 8 10 12 Figure 10: T  ransient Thermal Impedance 12 1 RG=1.5Ω VCE=300V TVj =125°C Diode ZthJC (K/W) 8 Erec (mJ) 2 RG˄Ω˅ Figure 9: Switching Energy vs. Forward Current 10 0 6 0.1 IGBT 0.01 4 2 0 0 MG06400D-BN4MM 200 400 600 0.001 0.001 800 4 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14 Power Module 600V IGBT Family Dimensions-Package D Circuit Diagram and Pin Assignment Packing Options Part Number Marking Weight Packing Mode M.O.Q MG06400D-BN4MM MG06400D-BN4MM 320g Bulk Pack 60 Part Marking System Part Numbering System MG06400D-BN4MM PRODUCT TYPE M: Power Module ASSEMBLY SITE MODULE TYPE G: IGBT VOLTAGE RATING 06: 600V WAFER TYPE CURRENT RATING PACKAGE TYPE 400: 400A MG06400D-BN4MM CIRCUIT TYPE B: 2x(IGBT+FWD) D: Package D 5 ©2014 Littelfuse, Inc Specifications are subject to change without notice. Revised:09/18/14