IRG7PH35UD1-EP

PD - 97455 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH35UD1PbF IRG7PH35UD1-EP VCES = 1200V I NOMINAL = 20A Features • • • • • • • • • Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package C G E TJ(max) = 150°C n-channel C VCE(on) typ. = 1.9V Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation • Low EMI C GC E TO-247AC IRG7PH35UD1PbF E GC TO-247AD IRG7PH35UD1-EP G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE=15V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Max. 1200 50 25 20 Units V f d Clamped Inductive Load Current, VGE=20V c 60 80 50 25 80 ±30 179 71 -55 to +150 A Continuous Gate-to-Emitter Voltage V W °C Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) g g Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 40 Max. 0.70 1.35 ––– ––– Units °C/W Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) 1 www.irf.com 02/09/2010 IRG7PH35UD1PbF/IRG7PH35UD1-EP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES V(BR)Transient ∆V(BR)CES/∆TJ Min. 1200 — — — — 3.0 — — — — — — Typ. — — 1.2 1.9 2.3 — 22 1.0 120 1.15 1.08 — Max. — 1300 — 2.2 — 6.0 — 100 — 1.26 — ±100 Units V V Conditions VGE = 0V, IC = 100µA Collector-to-Emitter Breakdown Voltage Repetitive Transient Collector-to-Emitter Voltage Temperature Coeff. of Breakdown Voltage VGE = 0V, TJ = 75°C, PW ” 10µs e VCE(on) VGE(th) gfe ICES VFM IGES Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current V/°C VGE = 0V, IC = 1mA (25°C-150°C) IC = 20A, VGE = 15V, TJ = 25°C V IC = 20A, VGE = 15V, TJ = 150°C V S µA V nA VCE = VGE, IC = 600µA VCE = 50V, IC = 20A, PW = 30µs VGE = 0V, VCE = 1200V e VGE = 0V, VCE = 1200V, TJ = 150°C IF = 20A IF = 20A, TJ = 150°C VGE = ±30V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eoff td(off) tf Eoff td(off) tf Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-Off Switching Loss Turn-Off delay time Fall time Turn-Off Switching Loss Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Min. — — — — — — — — — — — — Typ. 85 15 35 620 160 80 1120 190 210 1940 120 40 Max. 130 20 50 850 180 105 — — — — — — Units IC = 20A nC VGE = 15V VCC = 600V Conditions IC = 20A, VCC = 600V, VGE = 15V µJ ns RG = 10Ω, L = 200µH,LS = 150nH, TJ = 25°C Energy losses include tail IC = 20A, VCC = 600V, VGE = 15V RG = 10Ω, L = 200µH,LS = 150nH, TJ = 25°C IC = 20A, VCC = 600V, VGE=15V µJ ns pF RG = 10Ω, L = 200µH,LS = 150nH, TJ = 150°C Energy losses include tail IC = 20A, VCC = 600V, VGE = 15V RG = 10Ω, L = 200µH,LS = 150nH, TJ = 150°C VGE = 0V VCC = 30V f = 1.0Mhz TJ = 150°C, IC = 80A VCC = 960V, Vp =1200V Rg = 10Ω, VGE = +20V to 0V FULL SQUARE Notes:  VCC = 80% (VCES), VGE = 20V, RG = 10Ω. ‚ Pulse width limited by max. junction temperature. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. „ Rating for Hard Switching conditions. Rating is higher in Soft Switching conditions. … Rθ is measured at TJ approximately 90°C. 2 www.irf.com IRG7PH35UD1PbF/IRG7PH35UD1-EP 50 200 175 40 150 125 Ptot (W) 30 IC (A) 100 75 50 25 20 10 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T C (°C) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature VGE(th), Gate Threshold Voltage (Normalized) 1.0 IC = 600µA 0.9 Fig. 2 - Power Dissipation vs. Case Temperature 1000 100 0.8 0.7 10 0.6 0.5 25 50 75 100 125 150 T J , Temperature (°C) IC (A) 1 10 100 VCE (V) 1000 10000 Fig. 3 - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature 80 70 60 50 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 80 70 60 50 Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE = 20V ICE (A) ICE (A) 40 30 20 10 0 0 2 4 6 8 10 40 30 20 10 0 0 2 4 6 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 8 10 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 30µs VCE (V) VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 30µs www.irf.com 3 IRG7PH35UD1PbF/IRG7PH35UD1-EP 80 70 60 50 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V IF (A) 80 70 60 50 40 30 20 10 0 25°C 150°C ICE (A) 40 30 20 10 0 0 2 4 6 8 10 0.0 0.5 1.0 VF (V) 1.5 2.0 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 30µs 8 7 6 VCE (V) Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics 8 7 6 VCE (V) 5 4 3 2 1 4 8 ICE = 10A ICE = 20A ICE = 40A 5 4 3 2 1 ICE = 10A ICE = 20A ICE = 40A 12 VGE (V) 16 20 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40°C 8 7 6 VCE (V) IC, Collector-to-Emitter Current (A) 80 70 60 50 40 30 20 10 0 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 5 4 3 2 1 5 10 ICE = 10A ICE = 20A ICE = 40A TJ = 150°C T J = 25°C 15 VGE (V) 20 4 5 6 7 8 9 10 VGE, Gate-to-Emitter Voltage (V) Fig. 11 - Typical VCE vs. VGE TJ = 150°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 30µs 4 www.irf.com IRG7PH35UD1PbF/IRG7PH35UD1-EP 2200 2000 1800 EOFF 1000 tF Energy (µJ) 1400 1200 1000 800 600 400 200 0 10 Swiching Time (ns) 1600 tdOFF 100 10 20 IC (A) 30 40 50 0 10 20 IC (A) 30 40 Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V 2800 2600 2400 2200 Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V 10000 2000 1800 1600 1400 1200 1000 0 25 EOFF Swiching Time (ns) 1000 tdOFF Energy (µJ) 100 tF 10 50 75 100 125 0 20 40 60 RG ( Ω) 80 100 120 Rg ( Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V 10000 Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V 16 VGE, Gate-to-Emitter Voltage (V) 14 12 10 8 6 4 2 0 Cies VCES = 600V VCES = 400V Capacitance (pF) 1000 100 Coes Cres 10 0 100 200 300 VCE (V) 400 500 600 0 20 40 60 80 100 Q G, Total Gate Charge (nC) Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 18 - Typical Gate Charge vs. VGE ICE = 20A; L = 2.4mH www.irf.com 5 IRG7PH35UD1PbF/IRG7PH35UD1-EP 1 D = 0.50 Thermal Response ( Z thJC ) 0.20 0.1 0.10 0.05 0.02 0.01 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ1 τ2 τ3 τ4 τ4 Ri (°C/W) 0.017 0.218 0.299 0.177 τi (sec) 0.000013 0.000141 0.002184 0.013107 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ4 Ri (°C/W) 0.00756 0.56517 0.54552 0.25085 0.000005 0.000677 0.003514 0.019551 τi (sec) τ1 τ2 τ3 τ4 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com IRG7PH35UD1PbF/IRG7PH35UD1-EP L L 0 DUT 1K VCC 80 V + - VCC DUT Rg VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit C force diode clamp / DUT L 100K D1 22K C sens e -5V DUT / DRIVER Rg VCC G force DUT 0.0075µF E sense E force Fig.C.T.3 - Switching Loss Circuit 800 700 600 500 VCE (V) 400 300 200 100 0 -100 -0.5 Eof f Loss 5% ICE 5% V CE 90% ICE Fig.C.T.4 - BVCES Filter Circuit 40 tf 35 30 25 ICE (A) 20 15 10 5 0 -5 1.5 2 0 0.5 1 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.3 www.irf.com 7 IRG7PH35UD1PbF/IRG7PH35UD1-EP Dimensions are shown in millimeters (inches) TO-247AC Package Outline TO-247AC Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAQ@"à XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ Q6SUÃIVH7@S ,5)3( DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ à "$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6Sà Ã2Ã! X@@FÃ"$ GDI@ÃC TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRG7PH35UD1PbF/IRG7PH35UD1-EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSBQ"7 !F9@ XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ Q6SUÃIVH7@S Ã"$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ"$ GDI@ÃC TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/2010 www.irf.com 9