CLA40E1200HR

CLA40E1200HR High Efficiency Thyristor VRRM = 1200 V I TAV = 40 A VT = 1.19 V Single Thyristor Part number CLA40E1200HR Backside: isolated 2 1 3 Features / Advantages: Applications: Package: ISO247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c CLA40E1200HR Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 50 µA 4 mA TVJ = 25°C 1.25 V 1.49 V 1.19 V IT = 40 A IT = 80 A IT = 40 A IT = 80 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 95 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1.50 V T VJ = 150 °C 40 A 63 A TVJ = 150 °C 0.86 V 7.9 mΩ 0.8 K/W 0.3 K/W TC = 25°C 155 W t = 10 ms; (50 Hz), sine TVJ = 45°C 650 A t = 8,3 ms; (60 Hz), sine VR = 0 V 700 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 555 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 45°C 2.12 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 2.04 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.54 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 1.48 kA²s 25 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 120 A t P = 200 µs; di G /dt = 0.3 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.5 TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 50 mA TVJ = -40 °C 80 mA VGD gate non-trigger voltage TVJ = 150°C 0.2 V I GD gate non-trigger current 3 mA IL latching current TVJ = 25 °C 125 mA IG = 0.3 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 40 A 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 40A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 200 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c CLA40E1200HR Package Ratings ISO247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 150 °C -55 125 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Product Marking Logo IXYS Part Number XXXXXXXXX 50/60 Hz, RMS; IISOL ≤ 1 mA g 0.8 1.2 Nm 20 120 N 2.7 mm 4.1 mm 3600 V 3000 V Part description C L A 40 E 1200 HR = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] ISO247 (3) yywwZ Date Code Lot# 123456 Location Ordering Standard Ordering Number CLA40E1200HR Similar Part CMA40E1600HR Equivalent Circuits for Simulation I V0 R0 Marking on Product CLA40E1200HR Package ISO247 (3) * on die level Delivery Mode Tube Code No. 515428 Voltage class 1600 T VJ = 150°C Thyristor V 0 max threshold voltage 0.86 V R0 max slope resistance * 5.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c CLA40E1200HR Outlines ISO247 A E A2 A3 2x E3 ØP 2x D3 S Q D D1 2x E2 4 1 2 3 D2 L1 E1 L 2x b2 3x b C b4 Millimeter min max A 4.70 5.30 A1 2.21 2.59 A2 1.50 2.49 A3 typ. 0.05 b 0.99 1.40 b2 1.65 2.39 b4 2.59 3.43 c 0.38 0.89 D 20.79 21.45 D1 typ. 8.90 D2 typ. 2.90 D3 typ. 1.00 E 15.49 16.24 E1 typ. 13.45 E2 4.31 5.48 E3 typ. 4.00 e 5.46 BSC L 19.80 20.30 L1 4.49 Ø P 3.55 3.65 Q 5.38 6.19 S 6.14 BSC Dim. A1 2x e 2 Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 typ. 0.002 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.819 0.844 typ. 0.350 typ. 0.114 typ. 0.039 0.610 0.639 typ. 0.530 0.170 0.216 typ. 0.157 0.215 BSC 0.780 0.799 0.177 0.140 0.144 0.212 0.244 0.242 BSC 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c CLA40E1200HR Thyristor 150 600 120 500 IT 90 ITSM 400 [A] 60 10000 TVJ = 45°C TVJ = 125°C [A2s] 1,0 50 Hz, 80% VRRM 1,5 2,0 2,5 0,01 100 0,1 VT [V] 1 1 Fig. 3 I t versus time (1-10 s) 1000 80 70 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 1 50 tgd IT(AV)M [µs] [A] 40 6 4 5 10 lim. 1000 10000 [W] 0 40 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 80 120 160 Tcase [°C] Fig. 5 Gate controlled delay time tgd dc = 1 0.5 0.4 0.33 0.17 0.08 40 1000 IG [mA] Fig. 4 Gate voltage & gate current P(AV) 0 100 IG [mA] 60 10 typ. 1 10 0,1 100 30 20 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 10 dc = 1 0.5 0.4 0.33 0.17 0.08 60 TVJ = 125°C 100 23 1 4 5 6 7 8 910 t [ms] 1: IGD, TVJ = 150°C 1 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration 10 [V] 2 t [s] Fig. 1 Forward characteristics VG TVJ = 125°C 200 100 0,5 TVJ = 45°C 1000 TVJ = 125°C TVJ = 25°C 0 0,0 2 It [A] 300 30 VR = 0 V Fig. 6 Max. forward current at case temperature 0,8 0,6 ZthJC 0,4 i Rthi (K/W) 1 0.01 2 005 3 0.17 4 0.36 5 0.21 [K/W] 20 0,2 0 ti (s) 0.0004 0.009 0.014 0.05 0.36 0,0 0 10 20 30 40 IT(AV) [A] 50 0 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c