DSA30C150PB
Schottky Diode
VRRM
=
I FAV
= 2x
VF
=
150 V
15 A
0.75 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSA30C150PB
Backside: cathode
1
2
3
Features / Advantages:
Applications:
Package: TO-220
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20190923b
DSA30C150PB
Ratings
Schottky
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
150
IR
reverse current, drain current
VR = 150 V
TVJ = 25°C
250
µA
VR = 150 V
TVJ = 125°C
2.5
mA
IF =
15 A
TVJ = 25°C
0.89
V
IF =
30 A
1.02
V
IF =
15 A
0.75
V
IF =
30 A
VF
forward voltage drop
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
min.
TVJ = 125 °C
TC = 155 °C
rectangular
V
0.89
V
T VJ = 175 °C
15
A
TVJ = 175 °C
0.55
V
8.8
mΩ
1.75 K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR =
TVJ = 25°C
© 2019 IXYS all rights reserved
max. Unit
150
V
d = 0.5
for power loss calculation only
IXYS reserves the right to change limits, conditions and dimensions.
typ.
K/W
0.50
TC = 25°C
24 V f = 1 MHz
85
330
82
Data according to IEC 60747and per semiconductor unless otherwise specified
W
A
pF
20190923b
DSA30C150PB
Package
Ratings
TO-220
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
35
Unit
A
-55
175
°C
-55
150
°C
150
°C
1)
2
Weight
MD
mounting torque
FC
mounting force with clip
Product Marking
Part Number
Logo
Date Code
Lot #
g
0.4
0.6
Nm
20
60
N
Part description
D
S
A
30
C
150
PB
XXXXXX
=
=
=
=
=
=
=
Diode
Schottky Diode
low VF
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-220AB (3)
yywwZ
123456
Location
Ordering
Standard
Ordering Number
DSA30C150PB
Similar Part
DSA30C150PC
DSA30C150HB
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DSA30C150PB
Package
TO-263AB (D2Pak) (2)
TO-247AD (3)
* on die level
Delivery Mode
Tube
Code No.
505443
Voltage class
150
150
T VJ = 175 °C
Schottky
V 0 max
threshold voltage
0.55
V
R0 max
slope resistance *
5.6
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Quantity
50
Data according to IEC 60747and per semiconductor unless otherwise specified
20190923b
DSA30C150PB
Outlines TO-220
A
= supplier option
H1
ØP
D
4
3
L
3x b2
2
L1
1
3x b
C
2x e
A2
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.32
1.14
2.29
4.82
1.39
2.79
0.170
0.045
0.090
0.190
0.055
0.110
b
b2
0.64
1.15
1.01
1.65
0.025
0.045
0.040
0.065
C
D
0.35
14.73
0.56
16.00
0.014
0.580
0.022
0.630
E
e
H1
9.91
2.54
5.85
10.66
BSC
6.85
0.390
0.100
0.230
0.420
BSC
0.270
L
L1
12.70
2.79
13.97
5.84
0.500
0.110
0.550
0.230
ØP
Q
3.54
2.54
4.08
3.18
0.139
0.100
0.161
0.125
A1
Q
E
Dim.
2
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20190923b
DSA30C150PB
Schottky
30
100
25
400
TVJ=175°C
TVJ = 25°C
10
300
150°C
20
IR
IF
15
[mA]
[A]
5
200
100°C
[pF]
0.1
TVJ =
150°C
125°C
25°C
10
CT
1 125°C
75°C
100
50°C
0.01
25°C
0
0.0
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
0
20
40
60
80
100
VR [V]
VF [V]
Fig. 1 Maximum forward voltage
drop characteristics
0
20 40 60 80 100 120 140 160
VR [V]
Fig. 2 Typ. reverse current
IR vs. reverse voltage VR
Fig. 3 Typ. junction capacitance
CT vs. reverse voltage VR
30
40
25
DC
30
d = 0.5
20
P(AV)
IF(AV)
d=
DC
0.5
0.33
0.25
0.17
0.08
15
20
[W]
[A]
10
10
5
0
0
0
50
100
150
200
0
5
10
TC [°C]
15 20
25 30
35
IF(AV) [A]
Fig. 4 Average forward current
IF(AV) vs. case temperature TC
Fig. 5 Forward power loss
characteristics
2.0
1.0
D=0.5
0.33
0.25
0.17
ZthJC
0.08
0.1
[K/W]
Single Pulse
(Thermal Resistance)
0.0
0.0001
0.001
Note: All curves are per diode
0.01
0.1
1
10
t [s]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20190923b
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