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IXBT16N170A

IXBT16N170A

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    TO-268-3

  • 描述:

    IGBT 1700V 16A 150W TO268

  • 数据手册
  • 价格&库存
IXBT16N170A 数据手册
Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE(sat) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 16 A IC90 TC = 90°C 10 A ICM TC = 25°C, 1 ms 40 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load 40 1350 A V tSC (SCSOA) VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 33 W non repetitive PC TC = 25°C ICM = VCES = Features Tstg -55 ... +150 °C Weight Symbol Test Conditions IC IC ICES VCE = 0.8 VCES VGE = 0 V; Note 1 IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V Note 2 260 °C g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 2.5 TJ = 125°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved °C 6 4 = 250 mA, VGE = 0 V = 250 mA, VCE = VGE BVCES VGE(th) 300 1.13/10 Nm/lb.in. TO-247 TO-268 5.0 G G = Gate, E = Emitter, °C Mounting torque (M3) (TO-247) TO-247 AD (IXBH) W °C Md E 150 150 Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering SMD devices for 10 s G ms -55 ... +150 TJ TO-268 (IXBT) 10 TJM 5.5 V V 50 1.5 mA mA ±100 nA 6.0 V V = 1700 V = 16 A = 6.0 V = 50 ns C (TAB) C E C = Collector, TAB = Collector • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammability classification Applications • AC motor speed control • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • Capacitor discharge circuits Advantages • • • • Lower conduction losses than MOSFETs High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) 98707 (02/23/00) 1-2 IXBH 16N170A IXBT 16N170A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % C ies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz C res Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°C t ri IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 W td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 8 12.5 S 1400 pF 90 pF 31 pF 65 nC 13 nC 22 nC 15 ns 25 250 ns 50 100 ns 1.2 2.5 mJ Reverse Diode 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 ns G H 1.65 2.13 4.5 0.065 0.084 0.177 2.0 mJ J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 220 ns 150 ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 2.6 mJ TO-268AA (D3 PAK) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Test Conditions VF IF t = IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% IRM t rr IF vR = IC90, VGE = 0 V, -diF/dt = 50 A/us = 100V © 2000 IXYS All rights reserved A B ns 0.25 Symbol Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t £ 300 ms, duty cycle £ 2 %. Inches Min. Max. 28 0.83 K/W (TO-247) Dim. Millimeter Min. Max. 15 RthJC RthCK ns 160 TO-247 AD Outline 5.0 10 360 V A ns Dim. Min. Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 2-2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXBT16N170A 价格&库存

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