IXFB70N60Q2

IXFB70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low QG, Low Intrinsic RG High dv/dt, Low trr 600V 70A Ω 88mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 70 280 A A IA EAS TC = 25°C TC = 25°C 70 5 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 890 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 260 °C °C 30..120/6.7..27 N/lbs 10 g TL TSOLD 1.6 mm (0.063 in.) from Case for 10s Plastic Body for 10s FC Mounting Force Weight G D S G = Gate S = Source Tab D = Drain Tab = Drain Features z z z z Double Metal Process for Low Gate Resistance Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages z z z PLUS 264TM Package for Clip or Spring Mounting Space Savings High Power Density Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30 V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved TJ = 125°C z z V 5.5 V ± 200 nA z z DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies, > 500kHz Switching DC Choppers Pulse Generation Laser Drivers 50 μA 3 mA 88 mΩ DS99006C(7/10) IXFB70N60Q2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 36 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 35A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd PLUS264TM (IXFB) Outline 50 S 12 nF 1340 pF 345 pF 26 ns 25 ns 60 ns 12 ns 265 nC 57 nC 120 nC 0.14 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 70 A Repetitive, Pulse Width Limited by TJM 280 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 25A, VGS = 0V -di/dt = 100 A/μs VR = 100 V 250 ns QRM IRM 1.2 8.0 μC A Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB70N60Q2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC @ T J = 25ºC 70 140 VGS = 10V 7V 60 VGS = 10V 120 40 30 20 7V 100 6V I D - Amperes I D - Amperes 50 80 6V 60 40 5V 10 20 0 0 5V 0 1 2 3 4 5 6 7 VDS - Volts 0 2 4 6 8 10 12 VDS - Volts Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. @ T J = 125ºC 16 18 20 Junction Temperature 70 3.0 VGS = 10V 7V 2.6 RD S (on) - Normalized 60 I D - Amperes 14 6V 50 40 5V 30 20 10 VGS = 10V 2.2 I D = 70A 1.8 I D = 35A 1.4 1.0 0.6 0 0 2 4 6 8 10 12 14 0.2 -50 16 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to 0.5 I D25 Value vs. I D Fig. 6. Drain Current vs. Case Temperature 150 80 VGS = 10V 70 T J = 1 25ºC 60 2.2 I D - Amperes RD S (on) - Normalized 2.6 1.8 1.4 40 30 20 T J = 25ºC 1.0 50 10 0.6 0 20 40 60 I D 80 - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 100 120 140 0 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXFB70N60Q2 Fig. 8. Transconductance 100 100 90 90 80 80 70 70 gf s - Siemens I D - Amperes Fig. 7. Input Admittance T J = 125ºC 60 25ºC 50 - 40ºC 40 T J = - 40ºC 25ºC 60 125ºC 50 40 30 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 10 20 30 VGS - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage D 50 60 70 80 90 100 - Amperes Fig. 10. Gate Charge 140 10 9 120 VD S = 300V I D = 35A I G = 10mA 8 100 7 VG S - Volts I S - Amperes 40 I 80 60 5 4 3 T J = 125ºC 40 6 2 T J = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 40 80 Q VSD - Volts 120 G 160 200 240 280 - nanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.000 100000 Ciss Z(th)JC - ºC / W Capacitance - pF f = 1 MHz 10000 Coss 1000 0.100 0.010 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F _70N60Q2(95)5-28-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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