IXGN72N60A3

Preliminary Technical Information IXGN72N60A3 GenX3TM 600V IGBT VCES = 600V IC110 = 68A VCE(sat) ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS ICM TC = 25°C (Chip capability) TC = 110°C Terminal Current Limit TC = 25°C, 1ms 160 68 100 400 A A A A SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 150 A (RBSOA) Clamped inductive load PC TC = 25°C Ec G Ec C G = Gate, C = Collector, E = Emitter cEither emitter terminal can be used as Main or Kelvin Emitter @ 0.8 • VCES 360 W TJ -55 ... +150 °C Features TJM Tstg 150 -55 ... +150 °C °C z 2500 3000 V~ V~ z 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. VISOL 50/60Hz IISOL ≤ 1mA Md Mounting torque Terminal connection torque (M4) t = 1min t = 1s Weight 30 g z z Optimized for low conduction losses Isolation voltage 3000 V~ Square RBSOA International standard package Advantages z z High power density Low gate drive requirement Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES VGE = 0V TJ = 125°C z z V z V z 75 μA z 5.0 750 μA IGES VCE = 0V, VGE = ±20V ±100 nA VCE(sat) IC 1.35 = 60A, VGE = 15V, Note 1 © 2008 IXYS CORPORATION, All rights reserved z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits V DS99607A(11/08) IXGN72N60A3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 48 IC = 60A, VCE = 10V, Note 1 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg(on) SOT-227B miniBLOC (IXGN) 76 S 6600 pF 360 pF 80 pF 230 nC 40 nC Qgc 78 nC td(on) 31 ns Qge tri IC = 60A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°°C Eon td(off) tfi IC = 50A, VGE = 15V VCE = 480V, RG = 3Ω Eoff td(on) tri Eon td(off) tfi Inductive load, TJ = 125°C IC = 50A, VGE = 15V VCE = 480V, RG = 3Ω Eoff 34 ns 1.38 mJ 320 ns 250 ns 3.5 mJ 29 ns 32 ns 2.6 mJ 510 ns 375 ns 6.5 mJ 0.35 °C/W RthJC RthCK 0.05 °C/W Note: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGN72N60A3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 120 100 VGE = 15V 13V 11V 300 270 240 9V 80 60 IC - Amperes IC - Amperes 330 VGE = 15V 13V 11V 7V 40 210 9V 180 150 120 90 7V 60 20 30 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 2 Fig. 3. Output Characteristics @ 125ºC 5 6 7 8 125 150 7.5 8.0 1.4 VGE = 15V 13V 11V 9V 80 60 7V 40 20 VGE = 15V 1.3 VCE(sat) - Normalized 100 IC - Amperes 4 Fig. 4. Dependence of VCE(sat) on Junction Temperature 120 1.2 I C = 120A I C = 60A I C = 30A 1.1 1.0 0.9 0.8 5V 0.7 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 1.8 -25 0 VCE - Volts 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 3.2 3.0 180 TJ = 25ºC 2.8 160 I 2.4 C 2.2 140 = 120A 60A 30A IC - Amperes 2.6 VCE - Volts 3 VCE - Volts VCE - Volts 2.0 1.8 1.6 TJ = 125ºC 25ºC - 40ºC 120 100 80 60 1.4 40 1.2 20 1.0 0.8 0 5 6 7 8 9 10 11 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 IXGN72N60A3 Fig. 7. Transconductance Fig. 8. Gate Charge 130 16 TJ = - 40ºC 120 100 VGE - Volts 80 125ºC 70 I C = 60A I G = 10 mA 12 25ºC 90 g f s - Siemens VCE = 300V 14 110 60 50 10 8 6 40 4 30 20 2 10 0 0 20 40 60 80 100 120 140 160 180 0 200 0 20 40 60 80 IC - Amperes 100 120 140 160 180 200 220 240 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 160 100,000 f = 1 MHz 10,000 120 IC - Amperes Capacitance - PicoFarads 140 Cies 1,000 Coes 100 Cres 10 0 5 10 15 20 25 30 35 40 100 80 60 40 TJ = 125ºC 20 RG = 3Ω dV / dt < 10V / ns 0 100 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_72N60A3(76)3-25-08-B IXGN72N60A3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 16 I = 100A 7 14 VCE = 480V 5 4 I C = 50A 5.25 TJ = 125ºC 12 4.50 10 3.75 8 3.00 TJ = 25ºC 3 4 2 4 1.50 1 2 0.75 0 0 I C = 25A 0 0 5 10 15 20 25 30 35 6 20 30 40 50 RG - Ohms 18 ---- C = 100A 8 3 I C = 50A - MilliJoules 4 on 10 5 E I 366 1 363 55 65 75 85 95 105 115 I C C = 50A 800 369 700 I 400 0 5 10 15 380 570 450 VCE = 480V 410 280 370 260 330 TJ = 25ºC 220 40 50 60 70 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 80 90 t f - Nanoseconds td(off) - - - - RG = 3Ω , VGE = 15V t d(off) - Nanoseconds 490 30 35 400 580 380 540 360 530 340 20 30 I C 500 = 25A, 50A, 100A 340 460 320 420 300 380 280 340 tf 260 290 240 250 100 220 td(off) - - - - RG = 3Ω , VGE = 15V VCE = 480V 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 300 260 220 125 t d(off) - Nanoseconds TJ = 125ºC 240 25 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 610 300 20 RG - Ohms 400 tf 600 = 25A 360 0 125 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 320 C 500 TJ - Degrees Centigrade 360 1000 = 100A 900 I 372 2 45 1100 375 4 0 1200 VCE = 480V 378 2 I C = 25A 1300 381 6 2 td(off) - - - - TJ = 125ºC, VGE = 15V 384 5 12 35 0.00 100 t d(off) - Nanoseconds VCE = 480V 25 90 1400 tf 387 6 RG = 3Ω , VGE = 15V 14 80 390 t f - Nanoseconds 16 Eon 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 7 Eoff 60 2.25 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff - MilliJoules 6.00 6 2 t f - Nanoseconds ---- Eon RG = 3Ω , VGE = 15V - MilliJoules 6 --- VCE = 480V 8 Eoff on Eon - 6.75 E 10 TJ = 125ºC , VGE = 15V 16 - MilliJoules Eoff 8 on 12 18 E Eoff - MilliJoules 14 C 9 Eoff - MilliJoules 18 IXGN72N60A3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 120 td(on) - - - - 110 TJ = 125ºC , VGE = 15V 100 100 = 100A 70 70 60 I 50 C 60 = 50A I C = 25A 50 40 40 30 30 20 20 10 - Nanoseconds 80 d(on) C 80 5 10 15 20 25 30 td(on) - - - - 70 VCE = 480V TJ = 25ºC 34 RG = 3Ω , VGE = 15V 33 60 TJ = 125ºC 31 40 30 30 29 20 28 10 27 20 35 32 50 0 10 0 80 t I 90 35 tr 30 40 50 60 70 80 90 t d(on) - Nanoseconds VCE = 480V 90 t r - Nanoseconds 110 t r - Nanoseconds 90 120 tr 26 100 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 35 90 34 33 I C = 100A 70 tr 60 RG = 3Ω , VGE = 15V td(on) - - - - 32 31 VCE = 480V 50 30 40 29 I C = 50A 30 t d(on) - Nanoseconds t r - Nanoseconds 80 28 I 20 C = 25A 27 10 25 35 45 55 65 75 85 95 105 115 26 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_72N60A3(76)3-25-08-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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