IXGN400N60A3

IXGN400N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 400A VCE(sat)  1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS ICM TC = 25C (Chip Capability) TC = 110C Terminal Current Limit TC = 25C, 1ms 400 190 200 800 A A A A SSOA VGE = 15V, TVJ = 125C, RG = 0.5 ICM = 400 A (RBSOA) Clamped Inductive Load PC TC = 25C E G E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter @ 0.8 • VCES 830 W TJ -55 ... +150 C Features TJM Tstg 150 -55 ... +150 C C  2500 3000 V~ V~  1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in.  30 g VISOL Md 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque (M4) Weight   Optimized for Low Conduction losses Square RBSOA High Current Capability Isolation Voltage 3000 V~ International Standard Package Advantages   High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 1mA, VGE = 0V 600 VGE(th) IC = 250uA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V 5.5 VCE = 0V, VGE = ±20V VCE(sat) IC IC V 250 μA TJ = 125C IGES  2.5 mA ±400 nA         = 100A, VGE = 15V, Note 1 = 400A © 2016 IXYS CORPORATION, All Rights Reserved 1.05 1.55 1.25 V V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS99577C(12/16) IXGN400N60A3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 85 IC = 60A, VCE = 10V, Note 1 140 Cies Coes 32 VCE = 25V, VGE = 0 V, f = 1MHz Qge IC = 100V, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tr td(off) tf td(on) tr td(off) tf VCE = 400V, RG = 0.5 VCE = 400V, RG = 0.5 nF c S P NUT MATERIAL: STANDARD - Low carbon steel with Ni plating. OPTIONAL - Brass Nut is available PART NUMBER-BN 870 nC nC 300 nC 25 ns 95 ns 170 ns 270 ns 27 ns 97 ns 190 ns 650 ns A VMWN pF 120 B D T pF Resistive load, TJ = 125°C IC = 100A, VGE = 15V S 66 Resistive load, TJ = 25C IC = 100A, VGE = 15V M4-7 NUT (4 PLACES) J K 1450 Cres Qg(on) TO-227 Outline E F G H Q O R U 0.15 C/W RthJC RthCK 0.05 C/W Note 1. Pulse test, t  300μs; duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGN400N60A3 Fig. 1. Extended Output Characteristics @ TJ = 25ºC Fig. 2. Output Characteristics @ TJ = 125ºC 200 350 VGE = 15V 11V 9V 180 300 VGE = 15V 9V 160 140 I C - Amperes I C - Amperes 250 7V 200 150 7V 120 100 80 5V 60 100 40 5V 50 20 0 0 0 0.5 1 1.5 2 0 2.5 0.5 1 VCE - Volts Fig. 3. Dependence of VCE(sat) on Junction Temperature 1.06 TJ = 25ºC 2.4 0.98 2.2 I C = 200A I C = 300A 200A 100A 2.0 0.94 VCE - Volts VCE(sat) - Normalized Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 2.6 VGE = 15V 1.02 1.5 VCE - Volts 0.90 0.86 1.8 1.6 1.4 0.82 1.2 I C = 100A 0.78 1.0 0.74 0.8 -50 -25 0 25 50 75 100 125 150 4 5 6 7 8 9 10 11 12 13 14 15 180 200 VGE - Volts TJ - Degrees Centigrade Fig. 6. Transconductance Fig. 5. Input Admittance 200 240 180 160 I C - Amperes g f s - Siemens 200 140 TJ = 125ºC 25ºC - 40ºC 120 100 80 TJ = - 40ºC 25ºC 125ºC 160 120 80 60 40 40 20 0 0 3.5 4.0 4.5 5.0 5.5 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 6.0 6.5 0 20 40 60 80 100 I C - Amperes 120 140 160 IXGN400N60A3 Fig. 8. Reverse-Bias Safe Operating Area Fig. 7. Gate Charge 450 16 400 VCE = 300V 14 I C = 100A I C - Amperes V GE - Volts 350 I G = 10mA 12 10 8 6 300 250 200 150 4 TJ = 125ºC 100 2 RG = 0.5Ω dv / dt < 10V / ns 50 0 0 0 100 200 300 400 500 600 700 800 900 100 200 QG - NanoCoulombs 400 500 600 VCE - Volts Fig. 10. Maximum Transient Thermal Impedance Fig. 9. Capacitance 1 100,000 Cies 10,000 1,000 Z (th)JC - K / W Capacitance - PicoFarads 300 Coes 0.1 0.01 100 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXGN400N60A3 Fig. 12. Resistive Turn-on Rise Time vs. Collector Current Fig. 11. Resistive Turn-on Rise Time vs. Junction Temperature 600 500 RG = 0.5Ω , VGE = 15V 450 I C = 300A 500 VCE = 400V t r - Nanoseconds t r - Nanoseconds 400 RG = 0.5ΩVGE = 15V 400 VCE = 400V I C = 200A 300 200 TJ = 125ºC 350 300 TJ = 25ºC 250 200 150 100 100 I C = 100A 50 0 25 35 45 55 65 75 85 95 105 115 100 125 120 140 160 180 tr 600 50 I C = 300A, 200A, 100A 40 100 30 0 2.5 3.0 3.5 4.0 4.5 td(off) 550 500 190 450 180 400 170 I C = 300A 350 150 250 140 25 35 45 65 75 85 95 105 115 130 125 Fig. 16. Resistive Turn-off Switching Times vs. Gate Resistance 500 190 TJ = 125ºC 400 180 170 TJ = 25ºC 160 td(off) RG = 0.5Ω, VGE = 15V 150 t f - Nanoseconds 200 700 380 650 340 tf 600 td(off) I C = 100A 300 TJ = 125ºC, VGE =15V VCE = 400V I C = 200A 550 260 I C = 300A 500 220 450 t d(off) - Nanoseconds 600 t d(off) - Nanoseconds t f - Nanoseconds 55 TJ - Degrees Centigrade 210 tf 160 300 5.0 700 100 200 I C = 100A, 200A Fig. 15. Resistive Turn-off Switching Times vs. Collector Current 200 210 VCE = 400V RG - Ohms 300 220 200 20 2.0 t f - Nanoseconds t r - Nanoseconds 60 300 1.5 300 t d(off) - Nanoseconds I C = 300A t d(on) - Nanoseconds 70 1.0 280 RG = 0.5Ω, VGE = 15V 600 VCE = 400V 500 0.5 260 230 tf 650 80 TJ = 125ºC, VGE = 15V 200 240 700 90 td(on) 400 220 Fig. 14. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 13. Resistive Turn-on Switching Times vs. Gate Resistance 700 200 I C - Amperes TJ - Degrees Centigrade 180 VCE = 400V 0 100 120 140 160 180 200 220 240 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 260 280 140 300 400 140 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 RG - Ohms IXYS REF: G_400N60A3(99)7-10-08-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.