IXTA1R4N100P

IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P PolarTM Power MOSFET VDSS ID25 RDS(on) = 1000V = 1.4A  11.8  N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 1.4 A IDM TC = 25C, Pulse Width Limited by TJM 3.0 A IA TC = 25C 1.4 A EAS TC = 25C 100 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 63 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 2.50 3.00 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 G S D (Tab) TO-220 (IXTP) GD G = Gate S = Source      BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 50μA 2.5 4.5 D = Drain Tab = Drain International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages  Characteristic Values Min. Typ. Max. D (Tab) Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) S  High Power Density Easy to Mount Space Savings V Applications V  DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Lasers Drivers  Robotics and Servo Controls  IGSS VGS = 20V, VDS = 0V 50 nA IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 5 A 150 A 11.8  DS99737C(8/17) IXTY1R4N100P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max VDS = 20V, ID = 0.5 • ID25, Note 1 0.70 1.10 S 450 pF 27 pF 6 pF 17.8 nC 2.8 nC 9.9 nC 25 ns 35 ns 65 ns 28 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) 2.0 C/W RthJC RthCS IXTA1R4N100P IXTP1R4N100P TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 1.4 A ISM Repetitive, Pulse Width Limited by TJM 4.2 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 1.4A, -di/dt = 100A/μs, VR = 100V 750 ns Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY1R4N100P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 1.4 2.2 VGS = 10V 7V 1.2 1.8 1.6 6V I D - Amperes I D - Amperes VGS = 10V 7V 2.0 1.0 0.8 0.6 0.4 1.4 1.2 6V 1.0 0.8 0.6 0.4 0.2 5V 5V 0.2 0.0 0.0 0 2 4 6 8 10 12 14 0 16 5 10 15 3.0 1.4 VGS = 10V 7V 30 RDS(on) - Normalized 6V 0.8 0.6 0.4 VGS = 10V 2.6 1.0 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 0.7A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 1.2 20 VDS - Volts VDS - Volts 5V 0.2 2.2 I D = 1.4A 1.8 I D = 0.7A 1.4 1.0 0.6 0.0 0.2 0 5 10 15 20 25 30 35 -50 -25 0 VDS - Volts 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature TJ = 125 C VGS = 10V 50 1.6 o 2.2 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 0.7A Value vs. Drain Current 2.4 1.4 2.0 1.2 1.8 1.0 I D - Amperes RDS(on) - Normalized IXTA1R4N100P IXTP1R4N100P 1.6 1.4 1.2 0.8 0.6 0.4 o TJ = 25 C 0.2 1.0 0.0 0.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 1.6 1.8 2 2.2 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY1R4N100P Fig. 7. Input Admittance 2.0 IXTA1R4N100P IXTP1R4N100P Fig. 8. Transconductance 2.4 o 1.8 2.0 1.6 1.4 o g f s - Siemens I D - Amperes TJ = - 40 C VDS = 20V VDS = 20V 1.2 1.0 o TJ = 125 C o 25 C 0.8 o - 40 C 0.6 25 C 1.6 1.2 o 125 C 0.8 0.4 0.4 0.2 0.0 0.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 0.2 0.4 0.6 0.8 1 Fig. 9. Forward Voltage Drop of Intrinsic Diode 5.0 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 I D - Amperes VGS - Volts Fig. 10. Gate Charge 10 4.5 9 4.0 8 VDS = 500V I D = 0.7A 3.5 7 3.0 6 VGS - Volts I S - Amperes I G = 10mA 2.5 o TJ = 125 C 2.0 o TJ = 25 C 1.5 5 4 3 1.0 2 0.5 1 0.0 0 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 0 2 4 VSD - Volts 10 12 14 16 18 10 Ciss 100 Z(th)JC - K / W Capacitance - PicoFarads 8 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1,000 6 QG - NanoCoulombs Coss 1 0.1 10 Crss f = 1 MHz 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTY1R4N100P TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source L2 3 b2 A1 6.40 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION © 2017 IXYS CORPORATION, All Rights Reserved A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 A oP 4 H 0.34 [8.7] 6.50MIN BOTTOM VIEW 2 E D1 D H IXTA1R4N100P IXTP1R4N100P L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS REF: T_1R4N100P(2A) 12-19-12-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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