IXTA80N12T2

IXTA80N12T2 IXTP80N12T2 TrenchT2TM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 120V = 80A   17m TO-263AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 120 V VDGR TJ = 25C to 175C, RGS = 1M 120 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 80 A IDM TC = 25C, Pulse Width Limited by TJM 200 A IA TC = 25C 40 A EAS TC = 25C 400 mJ PD TC = 25C 325 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-263 TO-220 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 120 VGS(th) VDS = VGS, ID = 100A 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150C RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 G D (Tab) D = Drain Tab = Drain Features         V A International Standard Packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Fast Intrinsic Rectifier High Current Handling Capability 175  A 17 m Easy to Mount Space Savings High Power Density Applications     © 2013 IXYS CORPORATION, All Rights Reserved DS G = Gate S = Source              200 nA 5 TO-220AB (IXTP) Advantages V 4.5 D (Tab) Synchronous Rectification DC/DC Converters and Off-Line UPS Primary- Side Switch High Current Switching Applications DS100240A(8/13) IXTA80N12T2 IXTP80N12T2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 36 VDS = 10V, ID = 0.5 • ID25, Note 1 TO-263 Outline 60 S 4740 pF 415 pF 66 pF 21 ns 14 ns 39 ns tf 28 ns Qg(on) 80 nC 23 nC 20 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Qgs Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.46 C/W RthJC RthCH Pins: 1 - Gate 2,4 - Drain 3 - Source TO-220 0.50  C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 80 A Repetitive, Pulse Width Limited by TJM 320 A VSD IF = IS, VGS = 0V, Note 1 1.3 V trr IF = 0.5 • ID25, VGS = 0V IRM QRM -di/dt = 100A/s VR = 60V 90 ns 4 A 180 nC TO-220 Outline Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA80N12T2 IXTP80N12T2 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 80 250 VGS = 10V 9V 8V 70 VGS = 15V 10V 7V 200 8V 150 7V 50 6V I D - Amperes I D - Amperes 60 40 30 100 6V 20 50 10 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 4 6 8 10 12 14 16 18 VDS - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature 3.4 80 VGS = 15V 10V 8V 7V 70 20 VGS = 10V 3.0 2.6 50 RDS(on) - Normalized 60 I D - Amperes 2 VDS - Volts 6V 40 5V 30 20 2.2 I D = 80A 1.8 I D = 40A 1.4 1.0 10 0.6 4V 0 0.2 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 VDS - Volts 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 90 VGS = 10V 4.5 50 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current 5.0 25 80 4.0 70 3.5 60 I D - Amperes RDS(on) - Normalized TJ = 175ºC 3.0 2.5 2.0 50 40 30 TJ = 25ºC 1.5 20 1.0 10 0 0.5 0 50 100 150 I D - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 200 250 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA80N12T2 IXTP80N12T2 Fig. 7. Input Admittance Fig. 8. Transconductance 140 120 TJ = - 40ºC 120 100 80 TJ = 150ºC 25ºC - 40ºC 60 80 g f s - Siemens I D - Amperes 100 25ºC 60 150ºC 40 40 20 20 0 0 3 4 5 6 7 0 20 40 60 VGS - Volts 80 100 120 140 160 60 70 80 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 250 10 VDS = 60V 9 200 I D = 40A 8 I G = 10mA 150 VGS - Volts I S - Amperes 7 100 TJ = 150ºC 6 5 4 3 50 2 TJ = 25ºC 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 10 20 30 40 50 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 10000 RDS(on) Limit 100 25µs 1000 I D - Amperes Capacitance - PicoFarads C iss C oss 100µs 10 1ms 100 1 TJ = 175ºC C rss 10ms DC TC = 25ºC Single Pulse f = 1 MHz 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXTA80N12T2 IXTP80N12T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 20 20 RG = 10Ω , VGS = 10V RG = 10Ω , VGS = 10V VDS = 60V VDS = 60V 18 t r - Nanoseconds t r - Nanoseconds 18 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current I D = 80A 16 14 I D = 40A 12 TJ = 125ºC 16 14 TJ = 25ºC 12 10 10 25 35 45 55 65 75 85 95 105 115 125 40 45 50 55 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 180 tr 160 135 td(on) - - - - tf 120 100 75 80 60 60 45 I D = 40A 40 30 20 15 0 30 35 40 45 td(off) - - - - 60 I D = 40A 30 50 20 30 25 35 45 55 TJ = 25ºC, 125ºC 105 115 20 125 100 50 20 0 I D - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 80 250 40 20 75 I D = 80A, 40A 150 30 70 VDS = 60V 60 15 65 300 200 40 10 350 td(off) - - - - 80 20 60 95 TJ = 125ºC, VGS = 10V 100 t f - Nanoseconds 50 55 85 0 10 15 20 25 30 RG - Ohms 35 40 45 50 t d(off) - Nanoseconds 25 t d(off) - Nanoseconds t f - Nanoseconds VDS = 60V 60 tf 120 70 30 50 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 140 80 td(off) - - - - RG = 10Ω, VGS = 10V 45 65 TJ - Degrees Centigrade tf 40 40 I D = 80A 0 50 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 35 70 40 RG - Ohms 40 80 10 0 25 80 VDS = 60V t f - Nanoseconds 90 I D = 80A 20 75 t d(off) - Nanoseconds 120 15 70 RG = 10Ω, VGS = 10V 105 t d(on) - Nanoseconds t r - Nanoseconds 50 VDS = 60V 10 65 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 60 TJ = 125ºC, VGS = 10V 140 60 I D - Amperes IXTA80N12T2 IXTP80N12T2 Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXT_80N12T2 (V4)3-11-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.