IXTK600N04T2

Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET IXTK600N04T2 IXTX600N04T2 VDSS ID25 = = 40V 600A Ω 1.5mΩ RDS(on) ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ VGSM G 40 40 V V Transient ± 20 V ID25 IL(RMS) IDM TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 600 160 1600 A A A IA EAS TC = 25°C TC = 25°C 200 3 A J PD TC = 25°C 1250 W -55 ... +175 175 -55 ... +175 °C °C °C G = Gate S = Source 300 260 °C °C Features 1.13/10 Nm/lb.in. z 20..120 /4.5..27 N/lb. z 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) D Tab S PLUS247 (IXTX) G z z z D Tab S D = Drain Tab = Drain International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250µA 40 VGS(th) VDS = VGS, ID = 250µA 1.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 100A, Notes 1 & 2 3.5 ± 200 TJ = 150°C © 2009 IXYS CORPORATION, All Rights Reserved z Easy to Mount Space Savings High Power Density V Applications V z z nA 10 µA 1 mA z DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications 1.5 mΩ DS100209(11/09) IXTK600N04T2 IXTX600N04T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 90 VDS = 10V, ID = 60A, Note 1 TO-264 (IXTK) Outline 150 S 40 nF 6400 pF 1470 pF 1.32 Ω 40 ns 20 ns 90 ns tf 250 ns Qg(on) 590 nC 127 nC 163 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGI td(on) tr td(off) Qgs Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd 0.12 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM IF = 150A, VGS = 0V QRM -di/dt = 100A/µs VR = 20V 600 A 1800 A 1.2 V 100 3.3 ns A 165 nC Notes 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%. 2. Includes lead resistance. Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T ADVANCE TECHNICAL INFORMATION IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. 4,931,844 5,017,508 5,034,796 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. PLUS 247TM (IXTX) Outline Dim. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK600N04T2 IXTX600N04T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 350 400 VGS = 15V 10V 7V 300 VGS = 15V 350 250 6V 200 ID - Amperes ID - Amperes 10V 7V 6V 300 5V 150 100 250 5V 200 4.5V 150 100 4.5V 50 4V 50 4V 0 0 0.0 0.1 0.2 0.3 0.4 0.0 0.5 0.5 1.0 Fig. 3. Output Characteristics @ T J = 150ºC 2.0 2.5 3.0 Fig. 4. Normalized RDS(on) vs. Junction Temperature 350 2.0 VGS = 15V 10V 7V 300 VGS = 10V 1.8 R DS(on) - Normalized 250 ID - Amperes 1.5 VDS - Volts VDS - Volts 6V 200 5V 150 4V 100 50 I D < 600A 1.6 1.4 1.2 1.0 0.8 3V 0 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -50 -25 0 25 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature Fig. 5. Normalized RDS(on) vs. Drain Current 180 2.0 VGS = 10V 15V 1.8 160 External Lead Current Limit 1.6 120 TJ = 175ºC ID - Amperes R DS(on) - Normalized 140 1.4 100 80 60 1.2 TJ = 25ºC 40 1.0 20 0.8 0 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTK600N04T2 IXTX600N04T2 Fig. 8. Transconductance Fig. 7. Input Admittance 240 200 TJ = - 40ºC 180 200 160 120 g f s - Siemens ID - Amperes 25ºC TJ = 150ºC 25ºC - 40ºC 140 100 80 160 150ºC 120 80 60 40 40 20 0 0 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 160 180 200 Fig. 10. Gate Charge VDS = 20V 9 I D = 300A 300 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 120 10 350 200 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 100 200 300 400 500 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 600 10,000 100.0 RDS(on) Limit Ciss 1,000 10.0 ID - Amperes Capacitance - NanoFarads 100 ID - Amperes Coss 25µs 100µs External Lead Limit 100 1ms 10ms 1.0 Crss 10 TJ = 175ºC DC 100ms TC = 25ºC f = 1 MHz Single Pulse 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 1 10 VDS - Volts 100 IXTK600N04T2 IXTX600N04T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 100 90 RG = 1Ω , VGS = 10V 80 VDS = 20V 80 t r - Nanoseconds 70 t r - Nanoseconds RG = 1Ω , VGS = 10V 90 VDS = 20V 60 I 50 D = 200A 40 I 30 D = 100A 70 TJ = 125ºC 60 50 40 30 20 20 10 10 TJ = 25ºC 0 0 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 600 td(on) - - - - 60 100 40 0 4 5 6 7 8 9 250 130 200 I D = 100A 150 110 100 100 50 90 25 10 35 45 55 65 75 85 95 105 115 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf td(off) - - - - RG = 1Ω, VGS = 10V 200 800 180 700 140 200 120 TJ = 125ºC, 25ºC t d(off) - Nanoseconds 250 300 200 200 100 60 100 40 200 0 140 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 600 300 50 120 VDS = 20V 400 80 100 700 I D = 200A, 100A 400 100 80 td(off) - - - - 500 100 60 tf TJ = 125ºC, VGS = 10V 500 150 0 800 600 160 80 125 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = 20V 300 120 I D = 200A RG - Ohms 350 40 140 0 20 3 400 t f - Nanoseconds t f - Nanoseconds I D = 100A t f - Nanoseconds t r - Nanoseconds 80 150 t d(off) - Nanoseconds 300 t d(on) - Nanoseconds I D = 200A td(off) - - - - VDS = 20V 300 100 2 200 RG = 1Ω, VGS = 10V VDS = 20V 400 1 180 160 tf 350 120 TJ = 125ºC, VGS = 10V 200 160 400 140 500 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 ID - Amperes IXTK600N04T2 IXTX600N04T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance .sadgsfgsf 0.300 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:T_600N04T2(V9)11-05-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.