IXTQ14N60P

PolarTM Power MOSFET IXTA14N60P IXTP14N60P IXTQ14N60P Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) = =  600V 14A  550m TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 14 A IDM TC = 25C, pulse width limited by TJM 42 A IA EAS TC = 25C TC = 25C 14 900 A mJ PD TC = 25C 300 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 3.0 5.5 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting torque (TO-220 &TO-3P) Weight TO-263 TO-220 TO-3P TO-220AB (IXTP) GD S D (Tab) TO-3P (IXTQ) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 600 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 5.5   5 A 100 μA Applications   450 550 m    © 2015 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings V 100 nA TJ = 125C  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99329G(10/15) IXTA14N60P IXTP14N60P IXTQ14N60P Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 7 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf S 2500 pF 215 pF 13 pF Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 23 ns 27 ns 70 ns 26 ns 36 nC 16 nC 12 nC A oP A1 H1 Q D2 D D1 E1 A2 PIN L1 L e 3X b c e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 0.42 C/W RthJC RthCS E EJECTOR Qg(on) Qgs 13 TO-220 Outline (TO-220) (TO-3P 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) C/W C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 14 A ISM Repetitive, pulse width limited by TJM 42 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 14A, -di/dt = 100A/s VR = 100V, VGS = 0V 500 TO-3P Outline A A2 E ns 0P 0P1 E1 S + + + D1 D 4 1 2 3 L1 A1 Note 1: Pulse test, t  300s; duty cycle, d  2%. b b2 c b4 e TO-263 (IXTA) Outline PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA14N60P IXTP14N60P IXTQ14N60P Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 30 14 VGS = 10V 9V 12 VGS = 10V 9V 27 24 21 8V I D - Amperes I D - Amperes 10 8 6 18 8V 15 12 9 4 7V 6 2 3 0 7V 0 0 1 2 3 4 5 6 7 8 0 3 6 9 VDS - Volts 15 18 21 24 27 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.2 14 VGS = 10V 8V VGS = 10V 2.8 RDS(on) - Normalized 12 10 I D - Amperes 12 7V 8 6 4 2.4 I D = 14A 2.0 I D = 7A 1.6 1.2 0.8 2 6V 0.4 0 0 2 4 6 8 10 12 14 16 -50 18 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 16 3.4 VGS = 10V 14 3.0 TJ = 125ºC 12 2.6 I D - Amperes RDS(on) - Normalized 50 TJ - Degrees Centigrade 2.2 1.8 1.4 TJ = 25ºC 10 8 6 4 1.0 2 0 0.6 0 3 6 9 12 15 18 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 21 24 27 30 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA14N60P IXTP14N60P IXTQ14N60P Fig. 8. Transconductance Fig. 7. Input Admittance 50 27 45 24 40 TJ = 125ºC 25ºC - 40ºC 30 18 g f s - Siemens 35 I D - Amperes TJ = - 40ºC 25ºC 125ºC 21 25 20 15 12 9 15 6 10 3 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 5 10 15 20 VGS - Volts 25 30 35 40 45 50 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 50 10 45 9 40 8 VDS = 300V I D = 7A I G = 10mA 7 VGS - Volts I S - Amperes 35 30 25 20 6 5 4 TJ = 125ºC 15 3 TJ = 25ºC 10 2 5 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 4 8 VSD - Volts 12 16 20 24 28 32 36 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 RDS(on) Limit Ciss 1,000 I D - Amperes Capacitance - PicoFarads f = 1 MHz Coss 100 25µs 100µs 10 1ms 10ms 10 TJ = 150ºC Crss TC = 25ºC Single Pulse 1 DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1000 IXTA14N60P IXTP14N60P IXTQ14N60P Fig. 13. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: F_14N60P(5J)12-22-08-G Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.