IXTQ60N20L2

Advance Technical Information IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 200V = 60A ≤ 45mΩ Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 200 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C 60 A IDM TC = 25°C, Pulse Width Limited by TJM 150 A IA TC = 25°C 60 A EAS TC = 25°C 2 J PD TC = 25°C 540 W -55 to +150 °C TJM +150 °C Tstg -55 to +150 °C TJ TL 1.6mm (0.063in) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque (TO-247&TO-3P) 1.13/10 Nm/lb.in. Weight TO-268 TO-3P TO-247 4.0 5.5 6.0 g g g TO-3P (IXTQ) G D S TO-247(IXTH) G z z BVDSS VGS = 0V, ID = 1mA 200 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V ±100 nA 5 μA TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 50 μA 45 mΩ z z z Designed for Linear Operation International Standard Packages Avalanche Rated Guaranteed FBSOA at 75°C Easy to Mount Space Savings High Power Density Applications z z z z z © 2009 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Advantages V 4.5 Tab S Features z Characteristic Values Min. Typ. Max. D G = Gate S = Source z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Tab Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators DS100203(10/09) IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 35 44 Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd S nF 1080 pF 255 pF 26 ns 23 ns 90 ns 18 ns 255 nC 48 nC 90 nC 0.23 °C/W RthJC RthCS 53 10.5 Ciss TO-3P (IXTQ) Outline (TO-247&TO-3P) 0.25 °C/W Safe Operating Area Specification Symbol Test Conditions Min. SOA VDS = 160V, ID = 1.88A, TC = 75°C, tp = 3s 300 Typ. Max. W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 60 A Repetitive, Pulse Width Limited by TJM 240 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr IRM QRM IF = 30A, -di/dt = 100A/μs, VR = 75V, VGS = 0V 330 25.0 4.13 TO-247 (IXTH) Outline ns A μC 1 2 ∅P 3 Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-268 (IXTT) Outline e Terminals: 1 - Gate 3 - Source Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 60 180 VGS = 20V 14V 12V 10V 50 140 8V 40 120 ID - Amperes ID - Amperes VGS = 20V 14V 12V 10V 160 6V 30 20 8V 100 80 6V 60 40 10 20 4V 4V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 18 21 24 27 30 Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 60 3.8 VGS = 20V 12V 10V 8V VGS = 10V 3.4 3.0 40 R DS(on) - Normalized 50 ID - Amperes 15 VDS - Volts VDS - Volts 6V 30 20 2.6 I D = 60A 2.2 1.8 I D = 30A 1.4 1.0 10 0.6 4V 0.2 0 0 1 2 3 4 5 -50 6 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 70 5.0 VGS = 10V 4.5 60 50 TJ = 125ºC 3.5 ID - Amperes R DS(on) - Normalized 4.0 3.0 2.5 40 30 2.0 20 TJ = 25ºC 1.5 10 1.0 0 0.5 0 20 40 60 80 100 120 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 140 160 180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Fig. 7. Input Admittance Fig. 8. Transconductance 140 100 90 TJ = - 40ºC 120 80 70 g f s - Siemens ID - Amperes 100 80 TJ = 125ºC 25ºC - 40ºC 60 25ºC 60 125ºC 50 40 30 40 20 20 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 VGS - Volts 80 100 120 140 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 240 VDS = 100V 14 I D = 30A 200 I G = 10mA 12 VGS - Volts IS - Amperes 160 120 10 8 6 80 TJ = 125ºC 4 TJ = 25ºC 40 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 VSD - Volts 100 150 200 250 300 350 400 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100.0 1.000 Ciss 10.0 Z(th)JC - ºC / W Capacitance - NanoFarads f = 1 MHz Coss 1.0 0.100 0.010 Crss 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 1,000 1,000 TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse RDS(on) Limit RDS(on) Limit 25µs 100 100 25µs ID - Am peres ID - Am peres 100µs 1ms 100µs 1ms 10 10 10ms 10ms 100ms DC 100ms DC 1 1 1 10 100 VDS - Volts © 2009 IXYS CORPORATION, All Rights Reserved 1,000 1 10 100 1,000 VDS - Volts IXYS REF: T_60N20L2(8R)09-29-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.