IXYH20N120C3D1
1200V XPTTM IGBT
GenX3TM w/ Diode
VCES =
IC110 =
VCE(sat)
tfi(typ) =
High-Speed IGBT
for 20-50 kHz Switching
1200V
17A
3.4V
108ns
TO-247 AD
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
VGES
VGEM
Continuous
Transient
IC25
IC110
IF110
ICM
TC
TC
TC
TC
IA
EAS
TC = 25°C
TC = 25°C
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
PC
TC = 25°C
1200
1200
V
V
±20
±30
V
V
36
17
20
88
A
A
A
A
10
400
A
mJ
ICM = 40
@VCE VCES
A
230
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
6
g
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
Weight
G
C
E
G = Gate
E = Emitter
Tab
C
= Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
Avalanche Rated
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC
= 250A, VGE = 0V
1200
VGE(th)
IC
= 250A, VCE = VGE
3.0
ICES
VCE = VCES, VGE = 0V
VCE = 0V, VGE = 20V
VCE(sat)
IC
= 20A, VGE = 15V, Note 1
TJ = 150C
© 2013 IXYS CORPORATION, All Rights Reserved
V
5.0
V
25
350
A
μA
100
nA
3.4
V
V
TJ = 125C
IGES
Characteristic Values
Min.
Typ.
Max.
4.0
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100485B(8/13)
IXYH20N120C3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
7.0
IC = 20A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
Inductive load, TJ = 150°C
IC = 20A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
RthJC
RthCS
TO-247 (IXYH) Outline
11.5
S
1110
120
27
pF
pF
pF
53
9
22
nC
nC
nC
20
29
1.3
90
108
0.5
ns
ns
mJ
ns
ns
mJ
1.0
20
40
3.7
115
105
0.7
ns
ns
mJ
ns
ns
mJ
0.21
0.54 °C/W
°C/W
1
2
P
3
e
Terminals: 1 - Gate
3 - Emitter
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Collector
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Reverse Diode (FRED)
(TJ = 25°C, Unless Otherwise Specified)
Symbol
Test Conditions
VF
IRM
trr
IF = 30A,VGE = 0V, Note 1
Characteristic Value
Min. Typ.
Max.
TJ = 150°C
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
VR = 600V
195
TJ = 100°C
RthJC
Notes:
3.00
V
V
9
A
1.75
ns
0.90 °C/W
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYH20N120C3D1
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
100
40
VGE = 15V
13V
11V
10V
35
80
13V
9V
12V
25
I C - Amperes
I C - Amperes
30
VGE = 15V
8V
20
15
60
11V
10V
40
9V
7V
10
8V
20
5
7V
6V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
5
10
15
20
25
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.4
40
VGE = 15V
13V
11V
10V
30
2.0
9V
25
20
8V
15
7V
10
I C = 40A
1.6
I C = 20A
1.2
0.8
I C = 10A
6V
5
5V
0
0
1
2
3
4
30
VGE = 15V
VCE(sat) - Normalized
35
I C - Amperes
6V
0
6
5
6
7
0.4
-50
8
-25
0
25
VCE - Volts
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
50
11
TJ = - 40ºC
25ºC
150ºC
45
TJ = 25ºC
40
9
7
I C - Amperes
VCE - Volts
35
I C = 40A
5
30
25
20
15
20A
3
10
5
10A
1
0
6
7
8
9
10
11
12
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
13
14
15
3.5
4.5
5.5
6.5
7.5
VGE - Volts
8.5
9.5
10.5
IXYH20N120C3D1
Fig. 7. Transconductance
Fig. 8. Gate Charge
16
16
TJ = - 40ºC
12
10
I C = 20A
I G = 10mA
12
25ºC
150ºC
VGE - Volts
g f s - Siemens
VCE = 600V
14
14
8
6
10
8
6
4
4
2
2
0
0
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
40
45
I C - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
50
55
10,000
40
1,000
I C - Amperes
Capacitance - PicoFarads
f = 1 MHz
Cies
100
30
20
Coes
10
TJ = 150ºC
RG = 10Ω
dv / dt < 10V / ns
Cres
10
0
0
5
10
15
20
25
30
35
40
200
400
600
800
1000
1200
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
Z (th)JC - ºC / W
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
10
IXYH20N120C3D1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
2
Eon -
1.6
Eoff
1.2
16
VCE = 600V
0.8
8
---10
1.0
8
TJ = 150ºC
0.8
6
0.6
4
I C = 20A
TJ = 25ºC
0.4
4
0
0.4
15
20
25
30
35
40
45
50
2
0.2
0
10
0
20
55
22
24
26
28
1.4
----
0.6
4
t f i - Nanoseconds
Eoff - MilliJoules
6
I C = 20A
0.4
2
0.2
100
320
VCE = 600V
280
120
240
100
200
I C = 20A
80
160
I C = 40A
120
40
80
20
0
150
125
40
10
15
20
25
30
35
40
45
50
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
140
160
130
td(off) - - - -
80
100
TJ = 25ºC
60
90
40
80
20
70
22
24
26
28
30
32
34
I C - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
36
38
40
tfi
td(off) - - - -
130
RG = 10Ω , VGE = 15V
VCE = 600V
120
120
I C = 20A
100
110
80
100
60
90
I C = 40A
40
80
20
25
50
75
100
TJ - Degrees Centigrade
125
70
150
t d(off) - Nanoseconds
110
TJ = 150ºC
t d(off) - Nanoseconds
100
55
140
140
120
t f i - Nanoseconds
tfi
RG = 10Ω , VGE = 15V
VCE = 600V
t f i - Nanoseconds
td(off) - - - -
60
120
40
t d(off) - Nanoseconds
0.8
Eon - MilliJoules
8
I C = 40A
75
38
TJ = 150ºC, VGE = 15V
140
1.0
20
tfi
160
VCE = 600V
50
36
360
10
RG = 10Ω , VGE = 15V
25
34
180
12
Eon
32
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff
30
I C - Amperes
RG - Ohms
1.2
Eon - MilliJoules
12
I C = 40A
Eon
RG = 10Ω , VGE = 15V
VCE = 600V
Eon - MilliJoules
1.2
12
---
TJ = 150ºC , VGE = 15V
E off - MilliJoules
Eoff
Eoff - MilliJoules
1.4
20
IXYH20N120C3D1
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
280
td(on) - - - -
I C = 40A
30
80
25
I C = 20A
23
120
22
80
21
TJ = 150ºC
40
40
20
TJ = 25ºC
20
0
0
15
10
15
20
25
30
35
40
45
50
19
20
55
22
24
26
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
27
32
34
36
38
40
80
td(on) - - - -
RG = 10Ω , VGE = 15V
TJ = 150ºC
Triangular Wave
70
TC = 75ºC
25
VCE = 600V
60
VCE = 600V
23
80
21
I C = 20A
40
VGE = 15V
I C - Amperes
I C = 40A
120
t d(on) - Nanoseconds
t r i - Nanoseconds
30
Fig. 21. Maximum Peak Load Current vs. Frequency
200
160
28
I C - Amperes
RG - Ohms
tri
t d(on) - Nanoseconds
35
td(on) - - - -
VCE = 600V
t d(on) - Nanoseconds
40
160
120
tri
RG = 10Ω , VGE = 15V
160
VCE = 600V
200
24
45
TJ = 150ºC, VGE = 15V
t r i - Nanoseconds
tri
240
t r i - Nanoseconds
200
50
RG = 10Ω
D = 0.5
50
40
Square Wave
30
20
19
10
0
25
50
75
100
125
17
150
0
0.1
1
10
100
1000
fmax - KiloHertzs
TJ - Degrees Centigrade
Fig. 22. Maximum Transient Thermal Impedance (Diode)
Z (th)JC - ºC / W
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_20N120C3(4L) 9-06-13-C
IXYH20N120C3D1
Fig. 23. Forward Current IF vs VF
70
Fig. 24. Reverse Recovery Charge QRM vs. -diF/dt
5
TVJ = 100ºC
60
VR = 600V
4
50
IF = 60A
TVJ = 150ºC
IF
[A]
100ºC
40
3
25ºC
QRM
[µC]
30
30A
2
15A
20
1
10
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
100
1000
500
VF [V]
-diF/dt [A/µs]
Fig. 26. Dynamic Parameters QRM, IRM vs. TVJ
Fig. 25. Peak Reverse Current IRM vs. -diF/dt
60
2
TVJ = 100ºC
I RM & QRM [normalized]
VR = 600V
50
40
IF = 60A, 30A, 15A
I RM
30
[A]
20
1.5
1
IRM
0.5
QRM
10
0
0
0
200
400
600
800
20
1000
40
60
80
-diF/dt [A/µs]
Fig. 27. Recovery Time trr vs. -diF/dt
220
100
120
Fig. 28. Peak Forward Voltage VFR, trr vs -diF/dt
120
IF = 30A
100
VR = 600V
1.2
1
trr
80
trr
[ns]
160
TVJ = 100ºC
TVJ = 100ºC
200
140
TVJ [ºC]
0.8
180
VFR
[V]
IF = 60A
30A
15A
160
140
120
0.6 trr
60
[µs]
VFR
40
0.4
20
0.2
0
0
200
400
600
-diF/dt [A/µs]
© 2013 IXYS CORPORATION, All Rights Reserved
800
1000
0
100
200
300
400
500
600
-diF/dt [A/µs]
700
800
900
0
1000
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