IXYH8N250CV1HV

Advance Technical Information IXYH8N250CV1HV High Voltage XPTTM IGBT w/ Diode Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM Continuous Transient IC25 IC110 IF110 ICM TC TC TC TC SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 15 Clamped Inductive Load PC TC = 25°C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque 2500 2500 V V ±20 ±30 V V 29 8 14 70 A A A A ICM = 32 1500 A V 280 W -55 ... +175 175 -55 ... +175 °C °C °C Features 300 260 °C °C  1.13/10 Nm/lb.in. 6 g Weight 2500V 8A 4.0V 86ns TO-247HV (IXYH) Maximum Ratings = 25°C = 110°C = 110°C = 25°C, 1ms VCES = IC110 = VCE(sat)  tfi(typ) = G E C G = Gate E = Emitter    C (Tab) C = Collector Tab = Collector High Voltage Package High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 2500 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 8A, VGE = 15V, Note 1 V 5.0 25 A 3 mA TJ = 150C 100 TJ = 150C © 2017 IXYS CORPORATION, All Rights Reserved. V 3.35 4.75 4.00 nA V V Low Gate Drive Requirement High Power Density Applications      Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100790A(4/17) IXYH8N250CV1HV Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 8A, VCE = 10V, Note 1 5.4 RGi Gate Input Resistance Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff S 11  936 57 14 pF pF pF 45 6 21 nC nC nC 11 5 2.60 180 86 1.07 ns ns mJ ns ns mJ 12 12 3.70 200 128 1.20 ns ns mJ ns ns mJ 0.21 0.53 °C/W °C/W IC = 8A, VGE = 15V, VCE = 0.5 • VCES VCE = 0.5 • VCES, RG = 15 Note 2 Inductive load, TJ = 150°C IC = 8A, VGE = 15V VCE = 0.5 • VCES, RG = 15 Note 2 RthJC RthCS E R 9.0 VCE = 25V, VGE = 0V, f = 1MHz Inductive load, TJ = 25°C IC = 8A, VGE = 15V TO-247HV Outline 0P A A2 E1 0P1 Q S D1 D 4 D2 1 2 3 L1 D3 L e e1 A3 2X A1 E2 E3 4X b c 3X PINS: 1 - Gate 2 - Emitter 3, 4 - Collector 3X Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Value Min. Typ. Max. VF IF = 8A,VGE = 0V, Note 1 IRM IF = 8A,VGE = 0V, -diF/dt = 500A/μs, trr VR = 1200V, TJ = 150°C 4.0 TJ = 150°C 3.5 V V 22 A 190 ns RthJC Notes: 0.80 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXYH8N250CV1HV o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 16 VGE = 15V 12V 10V 9V 14 VGE = 15V 100 14V 8V 13V 10 8 I C - Amperes I C - Amperes 12 120 7V 6 80 12V 60 11V 10V 40 4 9V 2 20 8V 0 7V 6V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 5 10 15 16 2.2 VGE = 15V 13V 11V 10V 9V VGE = 15V 2.0 8V VCE(sat) - Normalized I C - Amperes 12 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 14 20 VCE - Volts VCE - Volts 10 7V 8 6 6V 4 1.8 I C = 16A 1.6 1.4 I C = 8A 1.2 1.0 I C = 4A 0.8 2 5V 0.6 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Input Admittance 35 o TJ = 25 C 30 7 25 I C - Amperes VCE - Volts 6 I C = 16A 5 4 8A 20 15 10 o TJ = 150 C o 25 C 3 o - 40 C 5 4A 0 2 5 6 7 8 9 10 11 12 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved. 13 14 15 4 4.5 5 5.5 6 6.5 7 VGE - Volts 7.5 8 8.5 9 9.5 IXYH8N250CV1HV Fig. 7. Transconductance Fig. 8. Gate Charge 16 18 o TJ = - 40 C 16 14 I C = 8A I G = 10mA 12 o 25 C 12 V GE - Volts g f s - Siemens VCE = 1250V 14 10 o 8 150 C 6 10 8 6 4 4 2 2 0 0 0 5 10 15 20 25 30 35 40 45 50 0 5 10 I C - Amperes 20 25 30 35 40 45 2250 2500 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 36 f = 1 MHz 32 28 1,000 24 I C - Amperes Capacitance - PicoFarads 15 C ies Coes 100 20 16 12 C res 10 o 8 TJ = 150 C 4 RG = 15Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 30 35 40 250 500 750 1000 1250 1500 1750 2000 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH8N250CV1HV Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 5 Eoff 3.6 12 Eon 10 2.8 6 1 Eoff - MilliJoules 2 Eon 7 6 VCE = 1250V 2.4 5 2.0 4 o TJ = 150 C 1.6 3 o TJ = 25 C 1.2 2 0.8 1 4 I C = 8A 0 10 20 30 40 50 60 70 80 90 0.4 2 100 0 8 9 10 11 RG - Ohms Eoff 4.0 Eon 8 VCE = 1250V 2.0 4 1.5 t f i - Nanoseconds 5 1.0 2 0.5 100 td(off) 140 400 I C = 16A 120 300 I C = 8A 100 200 80 100 60 1 150 125 10 20 30 40 50 td(off) RG = 15Ω, VGE = 15V 180 220 160 120 180 o TJ = 25 C 100 160 80 60 8 9 10 11 12 13 70 80 90 0 100 14 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved. 15 16 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) 260 240 RG = 15Ω, VGE = 15V VCE = 1250V 140 220 I C = 16A 120 200 I C = 8A 100 140 80 120 60 180 I C = 16A 25 50 75 160 100 TJ - Degrees Centigrade 125 140 150 t d(off) - Nanoseconds 200 t d(off) - Nanoseconds VCE = 1250V o TJ = 150 C 140 240 t f i - Nanoseconds tfi 60 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 160 600 500 o TJ = 150 ºC, VGE = 15V TJ - Degrees Centigrade 180 16 3 I C = 8A 75 15 t d(off) - Nanoseconds 2.5 E on - MilliJoules 6 50 14 VCE = 1250V I C = 16A Eoff - MilliJoules tfi 160 7 3.0 25 13 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 180 9 RG = 15ΩVGE = 15V 3.5 12 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 4.5 t f i - Nanoseconds E on - MilliJoules 8 I C = 16A E on - MilliJoules 3 8 RG = 15ΩVGE = 15V VCE = 1250V E off - MilliJoules Eoff 3.2 o TJ = 150 C , VGE = 15V 4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXYH8N250CV1HV Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri 50 30 50 25 tri td(on) o TJ = 150 C, VGE = 15V 30 I C = 8A 20 20 10 10 0 30 40 50 60 70 80 90 0 100 Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tri td(on) VCE = 1250V I C = 16A 14 15 12 I C = 8A 10 10 5 8 0 50 75 14 o TJ = 150 C 10 12 o TJ = 25 C 5 10 0 8 8 9 10 11 12 13 14 15 16 20 16 20 25 15 18 RG = 15Ω, VGE = 15V 25 16 100 125 t d(on) - Nanoseconds t r i - Nanoseconds 30 20 I C - Amperes RG - Ohms 35 18 t d(on) - Nanoseconds 30 t d(on) - Nanoseconds 40 20 td(on) VCE = 1250V 40 10 20 RG = 15Ω, VGE = 15V I C = 16A VCE = 1250V t r i - Nanoseconds 60 t r i - Nanoseconds 60 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 6 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_8N250C(3T-P628) 1-31-17 IXYH8N250CV1HV Fig. 22. Reverse Recovery Charge vs. -diF/dt Fig. 21. Diode Forward Characteristics 4.0 40 o TJ = 150 C 35 VR = 1200V 3.5 30 3.0 o TJ = 25 C QRR (μC) I F (A) 25 20 o TJ = 150 C I F = 16A 2.5 15 12A 2.0 8A 10 1.5 5 0 1.0 0 1 2 3 4 5 6 7 8 200 400 600 800 1000 1200 1400 1600 Fig. 23. Reverse Recovery Current vs. -diF/dt 2200 I F = 16A o o TJ = 150 C TJ = 150 C 220 VR = 1200V VR = 1200V I F = 16A,12A, 8A 12A 200 tRR (ns) 35 I RR (A) 2000 Fig. 24. Reverse Recovery Time vs. -diF/dt 240 45 40 1800 -diF/ dt (A/μs) VF (V) 30 8A 180 25 160 20 140 120 15 200 400 600 800 1000 1200 1400 1600 1800 2000 200 2200 400 600 800 Fig. 25. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.1 1000 1200 1400 1600 1800 2000 2200 -diF/dt (A/μs) diF/dt (A/μs) 1 Fig. 26. Maximum Transient Thermal Impedance (Diode) VR = 1200V I F = 8A -diF/dt = 500A/μs 1.0 KF Z (th)JC - K / W 0.9 0.8 KF QRR KF IRR 0.7 0.6 0 20 40 60 80 100 TJ (ºC) © 2017 IXYS CORPORATION, All Rights Reserved. 120 140 160 0.1 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.