KIC7WZ00FK

SEMICONDUCTOR TECHNICAL DATA 2 INPUT NAND GATE FEATURES High output drive : 24mA(min.) @VCC=3V. Super high speed operation : tpd 2.4ns(typ.) @VCC=5V, 50pF. Operation voltage range : VCC(opr)=1.65~5.5V. Latch-up performance : ESD performance : 500mA or more 200V or more (EIAJ) 2000V or more (MIL) Power down protection is provided on all inputs and outputs. A D DD KIC7WZ00FK SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT B C 1 8 DIM A B E C D E F G H MILLIMETERS _ 2.0 + 0.1 _ 3.1+ 0.1 _ 2.3 + 0.1 0.5 0.2+0.05/-0.04 _ 0.7+ 0.1 _ 0.12 + 0.04 0 ~ 0.1 4 5 MARKING F H G Type Name Z00 Lot No. US8 MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Power Supply Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current DC VCC/ground Current Power Dissipation Storage Temperature Range Lead Temperature (10s) ) SYMBOL VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL RATING -0.5~6 -0.5~6 -0.5~6 -20 -20 50 50 200 -65 150 UNIT V V V mA mA mA mA mW PIN CONNECTION(TOP VIEW) 1A 1 1B 2 8 VCC 7 1Y 6 2B 5 2A 2Y 3 GND 4 260 2002. 3. 7 Revision No : 1 1/3 KIC7WZ00FK Truth Table A L L H H B L H L H Y H H H L IN A IN B Logic Diagram & OUT Y Recommended Operating Conditions CHARACTERISTIC Supply Voltage Input Voltage Output Voltage Operating Temperature SYMBOL VCC VIN VOUT Topr RATING 1.65~5.5 1.5~5.5 0~5.5 0~5.5 0~VCC -40~85 0~20 (VCC=1.8V 0.15V, Input Rise and Fall Time dt/dv 2.5V 0.2V) 0~10 (VCC=3.3V 0.3V) 0~5 (VCC=5.5V 0.5V) Note1 : Data retention only. Note2 : VCC=0V. Note3 : High or low state ns/V (Note2) (Note3) (Note1) UNIT V V V 2002. 3. 7 Revision No : 1 2/3 KIC7WZ00FK ELECTRICAL CHARACTERISTICS DC Characteristics CHARACTERISTIC SYMBOL TEST CONDITION VCC(V) 1.65~1.95 MIN. 0.75 VCC VCC 1.55 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 Ta=25 TYP. 1.65 2.3 3.0 4.5 1.52 2.15 2.8 2.68 4.2 0 0 0 0 0.08 0.1 0.15 0.22 0.22 MAX. 0.25 VCC 0.3 0.1 0.1 0.1 0.1 0.24 0.3 0.4 0.55 0.55 1 1 1 VCC Ta=-40~85 MIN. 0.75 VCC 0.7 1.55 2.2 2.9 4.4 1.29 1.9 2.4 2.3 3.8 VCC MAX. 0.25 VCC 0.3 0.1 0.1 0.1 0.1 0.24 0.3 0.4 0.55 0.55 10 10 10 A A A V V VCC V UNIT High Level Input Voltage Low Level VIH 2.3~5.5 0.7 VIL 1.65~1.95 2.3~5.5 1.65 IOH=-100 A VIN= VIH or VIL 2.3 3.0 4.5 IOH=-4mA IOH=-8mA IOH=-16mA IOH=-24mA 1.65 2.3 3.0 3.0 4.5 1.65 IOH=100 A 2.3 3.0 4.5 Low Level VOL VIN=VIL IOH=4mA IOH=8mA IOH=16mA IOH=24mA IOH=32mA 1.65 2.3 3.0 3.0 4.5 0~5.5 0.0 1.65~5.5 High Level VOH Output Voltage IOH=-32mA Input Leakage Current Power Off Leakage Current Quiescent Supply Current IIN IOFF ICC VIN=5.5V or GND VIN or VOUT=5.5V VIN=5.5V or GND AC Characteristics (unless otherwise specified, Input : tr=tf=3ns) CHARACTERISTIC SYMBOL TEST CONDITION VCC(V) 1.8 tPLH tPHL CL=15pF, RL=1M 2.5 3.3 5.0 CL=50pF, RL=500 Input Capacitance Power Dissipation Capacitance CIN CPD (Note) 3.3 5.0 0.15 0.2 0.3 0.5 0.3 0.5 MIN. 2.0 1.2 0.8 0.5 1.2 0.8 Ta=25 TYP. 5.3 3.2 2.4 1.9 3.0 2.4 3.0 22 32 MAX. 9.6 5.3 3.7 2.9 4.6 3.6 Ta=-40~85 MIN. 2.0 1.2 0.8 0.5 1.2 0.8 MAX. 9.8 5.7 4.0 3.2 4.9 3.9 ns pF pF ns UNIT Propagation delay time 0~5.5 3.3 5.5 Note : CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation : ICC(opr)=CPD VCC fIN+ICC/2 2002. 3. 7 Revision No : 1 3/3