MCU20P10-TP

MCU20P10 Features • • • • Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Reliable and Rugged Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) P-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 1.79°C/W Junction to Case (Note 1) DPAK(TO-252) J H Parameter Symbol Rating Unit Drain-Source Voltage VDS -100 V Gate-Source Volltage VGS ±20 V -20 A -12 A Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current IDM -72 A Single Pulsed Avalanche Energy(Note 2) EAS 225 mJ Total Power Dissipation PD 70 W S Rev.3-4-12012020 1/4 V K F E M Q A G L B D 1. Gate 2,4. Drain 3. Source A B C D E F G H I J K L M O Q V G 4 3 DIM D O 2 I Note: 1.Surface Mounted on FR4 Board, t ≤ 10 sec. 2. L=0.5mH, VDD=-50V, VG=-10V,RG=25Ω,Starting TJ=25°C. Internal Structure 1 C DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 NOTE TYP. TYP. TYP. TYP. MCCSEMI.COM MCU20P10 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=-250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V ±20 µA Zero Gate Voltage Drain Current IDSS VDS=-100V, VGS=0V -1 µA Gate-Threshold Voltage(Note 3) VGS(th) VDS=VGS, ID=-250µA -1 -1.9 -3 V Drain-Source On-Resistance(Note 3) RDS(on) VGS=-10V, ID=-16A 85 100 116 mΩ gFS VDS=-50V, ID=-10A 5 Drain-Source Breakdown Voltage Forward Tranconductance(Note 3) -100 V S Dynamic Characteristics(Note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 140 Total Gate Charge Qg 61 Gate-Source Charge Qgs Gate-Drain Charge Qgd 29 Turn-On Delay Time td(on) 16 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time 2100 VDS=-25V,VGS=0V,f=1MHz VDS=-80V,VGS=-10V,ID=-16A VDD=-50V,ID=-16A VGS=-10V,RGEN=9.1Ω tf pF 590 nC 14 73 ns 34 57 Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage IS VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Forward Turn-on Time ton TC=25°C -18 A IS=-10A, VGS=0V -1.2 V IF=-16A,di/dt=100A/μs 88.3 ns 65.9 nC Intrinsic Turn-On Time is Negligible(Turn-On is Dominated by LS+LD) Note 3. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤2%. 4. Guaranteed by Design, Not Subject to Production Testing. Rev.3-4-12012020 2/4 MCCSEMI.COM MCU20P10 Curve Characteristics Fig. 2 - RDS(ON)—Temperature Fig. 1 - Typical Output Characteristics 3.0 -100 -15V 2.5 Normalized On-Resistance -80 Drain Current (A) -10V -60 -8V -40 -7V -6V -20 0 -10 -20 -30 VGS=-10V ID=-6A 1.5 1.0 0.5 -5.5V -5V VGS=-4.5V 0 2.0 -40 0.0 -50 -50 -25 0 Drain To Source Voltage (V) 50 75 100 125 150 175 Fig. 4 - Total Gate Charge Characteristics Fig. 3 - RDS(ON)—ID -10 120 TA=25°C Pulsed ID=-16A Gate-Source Voltage (V) Drain-Source On-Resistance (mΩ) 25 Junction Temperature (°C) 100 80 VGS=-10V 60 VDS=-80V -8 -6 -4 -2 0 40 0 -4 -8 0 -16 -12 Drain Current (A) -10 -20 -30 -40 -50 -60 -70 Total Gate Charge(nC) Fig. 5 - Safe Operation Area 1000 Drain Current (A) 100 100μs RDS(on) Limited 1ms 10 10ms 1 0.1 0.1 1 10 100 1000 Drain-Source Voltage (V) Rev.3-4-12012020 3/4 MCCSEMI.COM MCU20P10 Ordering Information Device Packing Part Number-TP Tape&Reel: 2.5Kpcs/Reel Note : Adding "-HF" Suffix for Halogen Free, eg. 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