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APTGT25DA120D1G

APTGT25DA120D1G

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    D1

  • 描述:

    IGBT 1200V 40A 140W D1

  • 数据手册
  • 价格&库存
APTGT25DA120D1G 数据手册
APTGT25DA120D1 Boost chopper VCES = 1200V IC = 25A @ Tc = 80°C ® Trench IGBT Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 3 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors • High level of integration 6 7 3 2 2 1 4 5 7 6 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 1200 40 25 65 ±20 140 Tj = 125°C 50A@1200V TC = 25°C TC = 80°C TC = 25°C Unit V A January, 2004 Q2 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT25DA120D1 – Rev 0 1 APTGT25DA120D1 All ratings @ Tj = 25°C unless otherwise specified VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Reverse diode ratings and characteristics Symbol Characteristic VF Diode Forward Voltage Erec Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions VGE = 0V, IC = 4mA VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 25A RG = 36Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 25A RG = 36Ω Test Conditions IF = 25A VGE = 0V IF = 25A VR = 600V di/dt =990A/µs IF = 25A VR = 600V di/dt =990A/µs TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol
APTGT25DA120D1G 价格&库存

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