ARF475FL_10

Common Source Push-Pull Pair D G S S G S S D ARF475FL RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR • Specified 150 Volt, 128 MHz Characteristics: • Output Power = 900 Watts Peak • Gain = 15dB (Class AB) • Efficiency = 50% min MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 165V 450W 150MHz The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz. • High Performance Push-Pull RF Package. • High Voltage Breakdown and Large SOA for Superior Ruggedness. • Low Thermal Resistance. • RoHS Compliant * *Pb Free Terminal Finish. All Ratings: TC = 25°C unless otherwise specified. ARF475FL UNIT Volts Amps Volts Watts °C 500 500 (each device) 10 ±30 910 -55 to 175 300 STATIC ELECTRICAL CHARACTERISTICS (each device) Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1 gfs2 Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Voltage 1 MIN TYP MAX UNIT Volts μA nA mhos 500 2.9 4 100 500 ±100 3 0.9 2 3.3 3.6 1.1 4 0.2 (I D(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 5A) Forward Transconductance Match Ratio (VDS = 15V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 200mA) Gate Threshold Voltage Match (VDS = VGS, ID = 200mA) / VGS(TH) DVGS(TH) Volts THERMAL CHARACTERISTICS Symbol RθJC RθJHS Characteristic Junction to Case Junction to Sink (Use High Efficiency Thermal Grease and Planar Heat Sink Surface.) MIN TYP 0.15 0.30 MAX 0.165 0.33 UNIT °C/W 050-4929 E 12-2010 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS (per section) Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time (Push-Pull Configuration) ARF475FL Test Conditions VGS = 0V VDS = 50V f = 1MHz VGS = 15V VDD = 250V ID = ID[Cont.] @ 25°C RG = 1.6 W MIN TYP MAX UNIT 780 125 7 5.1 4.1 12 4.0 830 130 9 10 8 18 7 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ 1 Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 5:1 Test Conditions f = 128 MHz Idq = 15mA VDD = 150V Pout = 900W PW = 3ms 10% duty cycle MIN TYP MAX UNIT dB % 14 50 16 55 No Degradation in Output Power Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi Reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 30 ID, DRAIN CURRENT (AMPERES) 25 20 15 10 5 0 8V 7V 12V 11V CAPACITANCE (pf) 10V 9V 3000 1000 500 Coss 100 50 Crss Ciss 10 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics 1 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 30 ID, DRAIN CURRENT (AMPERES) 25 20 TJ = +25°C 15 10 5 0 TJ = -55°C TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @