MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
CM100DU-24F
¡IC ................................................................... 100A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack
APPLICATION General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Tc measured point 94 7 17 80 ±0.25 23 23 2–φ6.5 MOUNTING HOLES 4
E2 G2
24
C2E1
E2
C1
18
G1E1
4 11
13.5
E2 G2
E2
RTC
48
24
27
24
12 3–M5NUTS 12mm deep 16 2.5 25 2.5 16
TAB #110. t=0.5
4
13
7.5
30 –0.5
+1
21.2
LABEL
CIRCUIT DIAGRAM
Sep.2000
G1 E1
CM
RTC C2E1
C1
MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C)
Symbol VCES VGES IC ICM IE ( Note 1) IEM ( Note 1) PC ( Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 100 200 100 200 500 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W °C °C V N•m N•m g
(Note 2) (Note 2)
Charged part to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr ( Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V VGE = VCES, VCE = 0V Tj = 25°C IC = 100A, VGE = 15V Tj = 125 °C VCE = 10V VGE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE1 = VGE2 = 15V RG = 3.1Ω, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied *2 (1/2 module) Tc measured point is just under the chips Min. — 5 — — — — — — — — — — — — — — — — — — 3.1 Limits Typ. — 6 — 1.8 1.9 — — — 1100 — — — — — 4.1 — — — 0.07 — — Max. 1 7 20 2.4 — 39 1.7 1.0 — 100 50 400 300 150 — 3.2 0.25 0.35 — 0.18 *3 31 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω
Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips.
Sep.2000
MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
200 180 160 140 120 100 80 60 40 20 0 0
Tj = 25°C VGE = 20V 15 11 10 8.5
9.5
3 2.5 2 1.5 1 0.5 0 VGE = 15V Tj = 25°C Tj = 125°C
9
8
0.5
1
1.5
2
2.5
3
3.5
4
0
40
80
120
160
200
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103
EMITTER CURRENT IE (A)
7 5 3 2
5
Tj = 25°C
Tj = 25°C
4
102
7 5 3 2
3 IC = 200A 2 IC = 100A IC = 40A
101
7 5 3 2
1
0
6
8
10
12
14
16
18
20
100 0.5
1
1.5
2
2.5
3
3.5
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103
CAPACITANCE Cies, Coes, Cres (nF)
7 5 3 2
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) tf td(off)
SWITCHING TIMES (ns)
102
7 5 3 2
td(on) tr Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load
2 3 5 7 102 2 3 5 7 103
0
101
7 5 3 2
Cres 10–1 –1 10 COLLECTOR-EMITTER VOLTAGE VCE (V)
100 1 10
COLLECTOR CURRENT IC (A)
Sep.2000
MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL)
REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.25°C/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.35°C/W 100
7 5 3 2 7 5 3 2 7 5 3 2 3 2
103
7 5 3 2
102
7 5 3 2
Irr trr
10–1
10–1
7 5 3 2 7 5 3 2
Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load 2 3 5 7 102
10–2 Single Pulse TC = 25°C
10–2
101 0 10
2
3
5 7 101
10–3
10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s)
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS (TYPICAL) 20
GATE-EMITTER VOLTAGE VGE (V)
18 16 14 12 10 8 6 4 2 0 0
IC = 100A
VCC = 400V VCC = 600V
500
1000
1500
GATE CHARGE QG (nC)
Sep.2000
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