BD135TG

BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • High DC Current Gain • BD 135, 137, 139 are complementary with BD 136, 138, 140 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1.5 A POWER TRANSISTORS NPN SILICON 45, 60, 80 V, 12.5 W Compliant* COLLECTOR 2, 4 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD135G BD137G BD139G VCEO Collector−Base Voltage BD135G BD137G BD139G VCBO Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 1.5 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.25 10 Watts mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12.5 100 Watts mW/°C – 55 to + 150 °C Operating and Storage Junction Temperature Range 3 BASE Vdc 45 60 80 1 EMITTER Vdc 45 60 100 TO−225 CASE 77−09 STYLE 1 1 2 3 MARKING DIAGRAM TJ, Tstg YWW BD1xxG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y WW BD1xx THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 10 °C/W Thermal Resistance, Junction−to−Ambient RqJA 100 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 17 1 G = Year = Work Week = Device Code xx = 35, 37, 39 = Pb−Free Package ORDERING INFORMATION Package Shipping BD135G TO−225 (Pb−Free) 500 Units / Box BD135TG TO−225 (Pb−Free) 50 Units / Rail BD137G TO−225 (Pb−Free) 500 Units / Box BD139G TO−225 (Pb−Free) 500 Units / Box Device Publication Order Number: BD135/D BD135G, BD137G, BD139G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Collector−Emitter Sustaining Voltage* (IC = 0.03 Adc, IB = 0) BD135G BD137G BD139G BVCEO* Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TC = 125_C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO DC Current Gain (IC = 0.005 A, VCE = 2 V) (IC = 0.15 A, VCE = 2 V) (IC = 0.5 A VCE = 2 V) hFE* Collector−Emitter Saturation Voltage* (IC = 0.5 Adc, IB = 0.05 Adc) VCE(sat)* Base−Emitter On Voltage* (IC = 0.5 Adc, VCE = 2.0 Vdc) VBE(on)* Min Max UnIt Vdc 45 60 80 − − − − − 0.1 10 − 10 25 40 25 − 250 − − 0.5 − 1 mAdc mAdc − Vdc Vdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. TYPICAL CHARACTERISTICS 1000 0.3 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 2 V 150°C 25°C −55°C 100 10 150°C IC/IB = 10 0.2 −55°C 25°C 0.1 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage http://onsemi.com 2 BD135G, BD137G, BD139G 1.2 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0 0.001 0.01 0.1 1 10 VBE(on), BASE−EMITTER ON VOLTAGE (V) TYPICAL CHARACTERISTICS VCE = 2 V 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage 10 1000 IC, COLLECTOR CURRENT (A) f = 1 MHz Cib 100 Cob 10 0.1 ms 5 ms 0.5 ms 1 TJ = 125°C dc 0.1 BD135 BD137 BD139 0.01 1 0.1 1 10 1 100 10 VR, REVERSE VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. Capacitance Figure 6. Active−Region Safe Operating Area 1.50 PD, POWER DISSIPATION (W) C, CAPACITANCE (pF) 1.2 1.25 1.00 0.75 0.50 0.25 0 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) Figure 7. Power Derating http://onsemi.com 3 140 160 80 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AD 4 DATE 25 MAR 2015 3 2 1 1 2 3 FRONT VIEW BACK VIEW SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB DIM A A1 b b2 c D E e L L1 P Q D P 1 2 3 L1 MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 GENERIC MARKING DIAGRAM* L YWW XX XXXXXG 2X b2 2X e b FRONT VIEW Y = Year WW = Work Week XXXXX = Device Code G = Pb−Free Package c SIDE VIEW *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE STYLE 2: PIN 1. CATHODE 2., 4. ANODE 3. GATE STYLE 3: PIN 1. BASE 2., 4. COLLECTOR 3. EMITTER STYLE 4: PIN 1. ANODE 1 2., 4. ANODE 2 3. GATE STYLE 5: PIN 1. MT 1 2., 4. MT 2 3. GATE STYLE 6: PIN 1. CATHODE 2., 4. GATE 3. ANODE STYLE 7: PIN 1. MT 1 2., 4. GATE 3. MT 2 STYLE 8: PIN 1. SOURCE 2., 4. GATE 3. DRAIN STYLE 9: PIN 1. GATE 2., 4. DRAIN 3. SOURCE STYLE 10: PIN 1. SOURCE 2., 4. DRAIN 3. GATE DOCUMENT NUMBER: DESCRIPTION: 98ASB42049B TO−225 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 1 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative