EFC4K105NUZTDG

EFC4K105NUZ Power MOSFET for 1‐2 Cells Lithium‐ion Battery Protection 22 V, 3.55 mW, 25 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications. Features • • • • VSSS RSS(ON) MAX IS MAX 22 V 3.55 mW @ 4.5 V 25 A 3.65 mW @ 3.8 V 2.5 V Drive Common-Drain Type ESD Diode-Protected Gate This device is Pb-Free, Halogen Free and RoHS Compliance 5.3 mW @ 3.1 V 7.2 mW @ 2.5 V ELECTRICAL CONNECTION Applications • 1-2 Cells Lithium-ion Battery Charging and Discharging Switch 6, 7, 8, 10 1: Source1 2: Gate1 3: Source1 4: Source1 5: Source1 6: Source2 7: Source2 8: Source2 9: Gate2 10: Source2 Specifications 9 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Symbol Value Unit Source to Source Voltage VSSS 22 V Gate to Source Voltage VGSS ±12 V Source Current (DC) IS 25 A Source Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1% ISP 100 A Total Dissipation (Note 1) PT 2.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C THERMAL RESISTANCE RATINGS Parameter 1, 3, 4, 5 N-Channel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Junction to Ambient (Note 1) 2 Symbol Value Unit RθJA 50 °C/W PIN ASSIGNMENT 1 WLCSP10 (3.40 x 1.96 x 0.10) CASE 567PL 10 4 2 5 6 3 7 9 8 MARKING DIAGRAM NZ AYWZZ 1. Surface mounted on ceramic substrate (5000 mm2 × 0.8 mm). NZ A Y W ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 August, 2018 − Rev. 0 1 Publication Order Number: EFC4K105NUZ/D EFC4K105NUZ ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol V(BR)SSS Conditions Min Source to Source Breakdown Voltage IS = 1 mA, VGS = 0 V Typ Max 22 Unit V ISSS Zero-Gate Voltage Source Current VSS = 17.6 V, VGS = 0 V 1 mA IGSS Gate to Source Leakage Current VGS = ±8 V, VSS = 0 V ±1 mA VGS(th) Gate Threshold Voltage VSS = 10 V, IS = 1 mA 0.4 1.3 V RSS(on) Static Source to Source On-State Resistance IS = 5 A, VGS = 4.5 V 1.8 2.7 3.55 mW IS = 5 A, VGS = 3.8 V 1.9 2.8 3.65 mW IS = 5 A, VGS = 3.1 V 2.0 3.3 5.3 mW IS = 5 A, VGS = 2.5 V 2.2 4.0 7.2 mW td(on) tr VSS = 10 V, VGS = 3.8 V, IS = 5 A Rg = 10 kW Switching Test Circuit Turn-ON Delay Time Rise Time td(off) tf Qg VF(S−S) 13 ms 35 ms Turn-OFF Delay Time 185 ms Fall Time 78 ms 43 nC Total Gate Charge VSS = 10 V, VGS = 3.8 V, IS = 5 A Forward Source to Source Voltage IS = 3 A, VGS = 0 V 0.75 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. td(on), tr, td(off), tf S2 RL G2 When FET1 is measured, Gate and Source of FET2 are short-circuited. Rg V G1 VSS S1 Figure 1. Switching Test Circuit ORDERING INFORMATION Device Marking Package Shipping† (Qty / Packing) EFC4K105NUZTDG NZ WLCSOP10, 3.40 x 1.96 x 0.10 (Pb-Free / Halogen Free) 5,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 EFC4K105NUZ TYPICAL CHARACTERISTICS TA = 25°C Single Pulse 5 10 4.5 V VSS = 6 V 9 Source Current, IS (A) Source Current, IS (A) 6 VGS = 2.5 V 4 3 3.1 V 2 3.8 V 1 8 7 TA = 75°C 6 5 25°C 4 3 −25°C 2 1 0 0 0.005 0.01 0.015 0.02 0 0.025 0 Source-to-Source Voltage, VSS (V) Static Source-to-Source On-State Resistance, RSS(on) (mW) Static Source-to-Source On-State Resistance, RSS(on) (mW) IS = 5 A Single Pulse 4.0 TA = 75°C 3.0 25°C 2.5 −25°C 2.0 1.5 1.0 1 2 3 4 5 6 7 0.8 1.0 1.2 VGS = 2.5 V, IS = 5 A Single Pulse 6.0 5.0 VGS = 3.1 V, IS = 5 A 4.0 3.0 VGS = 4.5 V, IS = 5 A 2.0 1.0 −60 −40 −20 8 VGS = 3.8 V, IS = 5 A 0 20 40 60 80 100 120 140 160 Ambient Temperature, TA (5C) Figure 4. On-Resistance vs. Gate-to-Source Voltage Figure 5. On-Resistance vs. Temperature 10 1000 Switching Time, S/W (ms) VGS = 0 V Single Pulse 1 TA = 75°C 25°C 0.1 −25°C 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.4 7.0 Gate-to-Source Voltage, VGS (V) Source Current, IS (A) 0.6 Figure 3. Transfer Characteristics 5.0 3.5 0.4 Gate-to-Source Voltage, VGS (V) Figure 2. On-Region Characteristics 4.5 0.2 0.9 100 td(off) tf 10 tr 1 1.0 VSS = 10 V, VGS = 3.8 V IS = 5 A 1 td(on) 10 Gate Resistance, Rg (kW) Forward Source-to-Source Voltage, VF(S-S) (V) Figure 6. Forward Source-to-Source Voltage vs. Current Figure 7. Switching Time vs. Gate Resistance www.onsemi.com 3 EFC4K105NUZ 4.5 VSS = 10 V IS = 5 A 4.0 3.5 100 Source Current, IS (A) Gate-to-Source Voltage, VGS (V) TYPICAL CHARACTERISTICS 3.0 2.5 2.0 1.5 1.0 IS = 25 A 0 10 20 30 50 40 100 ms DC Operation 1 0.1 1 ms 10 ms Operation in this area is limited by RSS(on) 100 ms TA = 25°C Single Pulse When mounted on ceramic substrate (5000 mm2 × 0.8 mm) 0.01 0.01 60 10 ms 10 0.5 0.0 ISP = 100 A (PW ≤ 10 ms) Total Gate Charge, Qg (nC) 0.1 1 10 Source-to-Source Voltage, VSS (V) Figure 8. Gate-to-Source Voltage vs. Total Charge Figure 9. Safe Operating Area Total Dissipation, PT (W) 3.0 Surface mounted on ceramic substrate (5000 mm2 × 0.8 mm) 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 Ambient Temperature, TA (5C) Figure 10. Total Dissipation vs. Temperature Thermal Resistance, RqJA (5C/W) 100 Duty Cycle − 50% 10 20% 10% 5% 2% 1 1% Single Pulse 0.1 0.00001 Surface mounted on ceramic substrate (5000 mm2 × 0.8 mm) 0.0001 0.001 0.01 0.1 1 10 Pulse Time, PT (s) Figure 11. Thermal Response Note on Usage: Since the EFC4K105NUZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP10 3.40x1.96x0.10 CASE 567PL ISSUE C DATE 14 MAR 2018 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A B DIM A b b1 b2 b3 b4 D E e e1 e2 e3 E PIN A1 REFERENCE 2X 0.03 C 2X 0.03 C TOP VIEW A 0.03 C MILLIMETERS MIN NOM MAX 0.08 0.10 0.12 0.22 0.25 0.28 0.56 0.50 0.53 1.78 1.81 1.84 0.32 0.35 0.38 0.32 0.35 0.38 3.40 BSC 1.96 BSC 0.64 BSC 0.60 BSC 0.525 BSC 0.525 BSC 0.03 C C SIDE VIEW e2 e1 0.05 e3 1 4 5 7 6 M SEATING PLANE 4X b2 C A B 10 b C A B 2X 0.05 M 9 e 2 3 4X 4X b4 0.05 b3 0.05 M 8 M 4X C A B b1 0.05 M C A B RECOMMENDED SOLDERING FOOTPRINT* 0.525 PITCH 0.60 PITCH C A B BOTTOM VIEW 0.575 PITCH 3 GENERIC MARKING DIAGRAM* 8 0.64 PITCH 0.25 4X WLCSP10 3.40x1.96x0.10 0.25 0.45 10 4X 0.35 R0.175 0.56 PITCH DIMENSIONS: MILLIMETERS *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DESCRIPTION: 2X 0.53 4X = Assembly Location = Year = Work Week = Assembly Lot = Pb−Free Package 98AON14524G 0.32 9 1 DOCUMENT NUMBER: 2X 2 XX AYWZZG A Y W ZZ G PACKAGE OUTLINE *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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