FCH041N65EFL4

MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 76 A, 41 mW FCH041N65EFL4 Description SuperFET II Mosfet is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server / telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FREFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. Features • • • • • • www.onsemi.com VDS RDS(ON) MAX ID MAX 650 V 41 mW @ 10 V 76 A D G Typ. RDS(on) = 36 mW 700 V @ TJ = 150°C Ultra Low Gate Charge (Typ. Qg = 229 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant S2 S1 S1: Driver Source S2: Power Source N-CHANNEL MOSFET Applications • • • • AC−DC Power Supply LCD/LED/PDP TV Solar Inverter Telecom / Server Power Supplies D S2 S1 G TO−247−4LD CASE 340CJ MARKING DIAGRAM $Y&Z&3&K FCH041N65 EFL4 FCH041N65EFL4 $Y &Z &3 K = Specific Device Code = ON Semiconductor Logo = Assembly Plant Code = Data Code (Week & Year) = Lot ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 August, 2020 − Rev. 3 1 Publication Order Number: FCH041N65EFL4/D FCH041N65EFL4 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current: IDM Drain Current: EAS Single Pulsed Avalanche Energy (Note 2) IAS Avalanche Current (Note 2) EAR dv/dt PD TJ, TSTG TL Value Unit 650 V − DC ±20 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 76 − Continuous (TC = 100°C) 48.1 − Pulsed (Note 1) A 228 A 2025 mJ 15 A Repetitive Avalanche Energy (Note 1) 5.95 mJ MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 Power Dissipation (TC = 25°C) 595 W − Derate Above 25°C 4.76 W/°C −55 to + 150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 15 A, RG = 25 W, starting TJ = 25 °C. 3. ISD ≤ 38 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, starting TJ = 25 °C. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH041N65EFL4 FCH041N65EF TO−247 4L Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. FCH041N65EFL4 Unit 0.21 °C/W 40 www.onsemi.com 2 FCH041N65EFL4 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25°C 650 − − V VGS = 0 V, ID = 10 mA, TJ = 150°C 700 − − OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS /DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C − 0.72 − V/°C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 10 mA VDS = 520 V, TC = 125 °C − 145 − VGS = ±20 V, VDS = 0 V − − ±100 nA IGSS Gate to Body Leakage Current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 7.6 mA 3 − 5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 38 A − 36 4 mW Forward Transconductance VDS = 20 V, ID = 38 A − 71.7 − S VDS = 100 V, VGS = 0 V, f = 1 MHz − 9446 12560 pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 366 490 pF Crss Reverse Transfer Capacitance − 35 − pF Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz − 197 − pF Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 631 − pF Total Gate Charge at 10 V VDS = 380 V, ID = 38 A, VGS = 10 V (Note 4) − 229 298 nC − 50 − nC − 90 − nC f = 1 MHz − 0.6 − W VDD = 380 V, ID = 38 A, VGS = 10 V, Rg = 4.7 W (Note 4) − 55 120 ns − 25 60 ns Coss(eff.) Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn−On Rise Time td(off) Turn-Off Delay Time − 169 348 ns Turn−Off Fall Time − 18 46 ns Maximum Continuous Source to Drain Diode Forward Current − − 76 A ISM Maximum Pulsed Drain to Source Diode Forward Current − − 228 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 38 A − − 1.2 V trr Reverse Recovery Time − 207 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 38 A, diF/dt = 100 A/ms − 1.5 − mC tf DRAIN-SOURCE DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCH041N65EFL4 TYPICAL CHARACTERISTICS 500 200 VGS o 150 C ID, Drain Current[A] 100 ID, Drain Current[A] 100 8.0V 7.0V 6.5V 6.0V 5.5V 10 o 25 C 10 o −55 C *Notes: 1. VDS = 20 V 2. 250 ms Pulse Test *Notes: 1. 250 ms Pulse Test 2. TC = 25°C 1 0.1 1 VDS, Drain−Source Voltage[V] 1 10 5 6 7 4 VGS, Gate−Source Voltage[V] 3 8 Figure 2. Transfer Characteristics Figure 1. On−Region Characteristics 1000 0.06 IS, Reverse Drain Current [A] RDS(ON) [ W], Drain−Source On−Resistance 100 0.05 VGS = 10V 0.04 VGS = 20V o 150 C 10 1 o 25 C 0.1 *Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 0.01 o 0.03 *Note: T C = 25 C 0 40 80 120 160 ID, Drain Current [A] 200 0.001 0.0 240 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 2.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 10 100000 Capacitances [pF] 10000 1000 Coss 100 10 VGS, Gate−Source Voltage [V] VDS = 130V Ciss *Notes: 1. VGS = 0 V 2. f = 1 MHz Ciss Coss Crss 1 0.1 Crss = Cgs + Cgd (Cds = shorted) = Cds + Cgd = Cgd 1 10 100 VDS, Drain−Source Voltage [V] VDS = 325V 8 VDS = 520V 6 4 2 *Note: I D = 38A 0 1000 0 50 100 150 200 Qg, Total Gate Charge [nC] 250 Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics www.onsemi.com 4 FCH041N65EFL4 1.15 2.5 1.10 2.0 RDS(on) , [Normalized] Drain−Source On−Resistance BV DSS, [Normalized] Drain−Source Breakdown Voltage TYPICAL CHARACTERISTICS 1.05 1.00 0.95 *Notes: 1. VGS = 0 V 2. ID = 10 mA 0.90 −75 −50 −25 0 25 50 75 100 125 150 o TJ, Junction Temperature [ C] 1.5 1.0 0.5 *Notes: 1. VGS = 10 V 2. ID = 38 mA 0.0 −75 −50 −25 0 25 50 75 100 125 150 o TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 80 500 10m s 100m s DC 10 Operation in This Area is Limited by R DS(on) 1 *Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 0.1 0.01 60 1ms ID, Drain Current [A] ID, Drain Current [A] 100 1 10 100 VDS, Drain−Source Voltage [V] 40 20 0 25 1000 52.0 EOSS, [ m J] 41.6 31.2 20.8 10.4 0 100 200 300 400 500 600 VDS, Drain to Source Voltage [V] 150 Figure 10. Maximum Drain Current vs. Case Temperature Figure 9. Maximum Safe Operating Area 0 50 75 100 125 o TC, Case Temperature [ C] 700 Figure 11. Eoss vs. Drain to Source Voltage www.onsemi.com 5 FCH041N65EFL4 TYPICAL CHARACTERISTICS o ZqJC (t), Thermal Response [ C/W] 0.5 0.1 0.5 0.2 P DM 0.1 0.01 0.05 t1 0.02 0.01 Single pulse 0.001 −5 10 t2 *Notes: 1. ZqJC(t) = 0.21°C/W Max 2. Duty Factor, D = t1/t2 3. TJM − TC = PDM * ZqJC(t) −4 10 −3 −2 −1 10 10 10 t 1, Rectangular Pulse Duration [sec] Figure 12. Transient Thermal Response Curve www.onsemi.com 6 0 10 1 10 FCH041N65EFL4 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCH041N65EFL4 + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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