FCH47N60-F133

MOSFET – N 沟道, SUPERFET) II 600 V, 47 A, 70 mW FCH47N60 说 SUPERFET MOSFET ON Semiconductor       (SJ) MOSFET 。   !"、dv/dt $%  &。'， SUPERFET MOSFET ()!"*，+,'- (PFC)、./0 / 1、2!、 ATX 345 *。 www.onsemi.cn VDS RDS(ON) MAX ID MAX 600 V 70 m @ 10 V 47 A D 特 •6650 V @ TJ = 150°C •678% RDS(on) = 58 m •6 (78%Qg = 210 nC) •69:" ; (78% Coss(eff.) = 420 pF) •6100% #$&%& •6') RoHS (< • This is a Pb−Free Device G S N-CHANNEL MOSFET S 用 •6=>)?0 •6AC-DC  D G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FCH 47N60 $Y &Z &3 &K FCH47N60 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2009 April, 2020 − Rev. 3 1 Publication Order Number: FCH47N60CN/D FCH47N60 MOSFET 额 (TC = 25°C ) FCH47N60_F133  VDSS －  600 V VGSS －  ±30 符 ID   A  (TC = 25°C) 47  (TC = 100°C) 29.7  ( 1) 141 A 1800 mJ 47 A IDM  EAS  ( 2) IAR  ( 1) EAR  ( 1) 41.7 mJ dv/dt  dv/dt  ( 3) 4.5 V/ns (TC = 25°C) 417 W  25°C  3.33 W/°C −55 $ + 150 °C 300 °C PD TJ, TSTG TL   !"# %&'()*+,!"，./ 1/8”，0 5 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (234) 5)6 7( #，8。59 : ，; ，?@8，A" BC。 1. 6 ：E"#:)F!。 2. IAS = 18 A，VDD = 50 V，RG = 25 ，G$ TJ = 25°C。 3. ISD ≤ 48 A，di/dt ≤ 200 A/s，VDD ≤ BVDSS，G$ TJ = 25°C。 装标识购 编 顶标 装 装法   量 FCH47N60−F133 FCH47N60 TO−247 %H N/A N/A 30 & 热能 符  FCH47N60_F133  0.3 °C/W RJC F$IJ) RJA 'KI(L(IJ)* 0.24 °C/W RJA F$M+IJ) 41.7 °C/W www.onsemi.cn 2 FCH47N60 电气特 (TC = 25°C ) 符   测试     VGS = 0 V, ID = 250 A, TC = 25°C 600 − − V VGS = 0 V, ID = 250 A, TC = 150°C − 650 − ,N!"OP ID = 250 A, !"2 25°C − 0.6 − V/°C BVDS  ,N VGS = 0 V, ID = 47 A − 700 − V IDSS Q VDS = 600 V, VGS = 0 V − − 1 A VDS = 480 V, TC = 125 °C − − 10  - / VGS = ±30 V, VDS = 0 V − − ±100 nA VGS(th) R  VGS = VDS, ID = 250 A 3.0 − 5.0 V RDS(on)  - ST?UJ VGS = 10 V, ID = 23.5 A − 0.058 0.070  V0W? VDS = 40 V, ID = 23.5 A − 40 − S VDS = 25 V, VGS = 0 V, f = 1.0 MHz 特 BVDSS BVDSS / TJ IGSS $ ,N  !通特 gFS "#特 Ciss X4Y − 5900 8000 pF Coss XY − 3200 4200 pF Crss 506XY − 250 − pF Coss XY VDS = 480 V, VGS = 0 V, f = 1.0 MHz − 160 − pF ZXY VDS = 0 V $ 400 V, VGS = 0 V − 420 − pF ?U[\ VDD = 300 V, ID = 47 A, VGS = 10 V, RG = 25  ( 4) − 185 430 ns − 210 450 ns :][\ − 520 1100 ns :];L − 75 160 ns − 210 270 nC − 38 − nC − 110 − nC Coss(eff.) $特 td(on) tr td(off) tf Qg(tot) GU89L 10 V (^_ Qgs  - ^ Qgd  - “`CP。5?@Ah;ij，=>C'“abC”7c eCP@B@。 4. kCdlm!"。 www.onsemi.cn 3 FCH47N60 能特& VGS Top: ID, Drain Current [A] 101 ID, Drain Current [A] 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom: 5.5 V 102 *Notes: 1. 250 s Pulse Test 2. TC = 25°C 100 102 150°C 25°C 101 −55°C *Notes: 1. VDS = 40 V 2. 250 s Pulse Test 100 101 100 VDS, Drain−Source Voltage [V] 10−1 6 8 4 VGS, Gate−Source Voltage [V] 2 ' 1. !通)*特 10 ' 2. +输特 IDR, Reverse Drain Current [A] RDS(ON) [], Drain−Source On−Resistance 0.20 0.15 VGS = 10 V 0.10 VGS = 20 V 0.05 *Note: TJ = 25°C 0.00 0 20 40 VGS, Gate−Source Voltage [V] Capacitance [pF] 100 C iss 0.4 *Notes: 1. VGS = 0 V 2. 250 s Pulse Test 0.6 0.8 1.0 1.2 1.4 VSD, Source−Drain Voltage {V] 1.6 12 C oss 15000 0 10−1 25°C ' 4. 6%极管正7电4,/源电流0温8的系 C = C + C (C = shorted iss gs gd ds C =C +C oss ds gd C =C rss gd 25000 5000 150°C 0.2 30000 10000 101 60 80 100 120 140 160 180 200 ID, Drain Current [A] ' 3. !通电阻,/漏极电流0栅极电4的系 20000 102 *Notes: 1. VGS = 0 V 2. f = 1 MHz Crss VDS = 100 V 10 VDS = 400 V 8 6 4 2 *Note: ID = 47 A 0 100 101 VDS, Drain−Source Voltage [V] VDS = 250 V 0 50 100 150 200 QG, Total Gate Charge [nC] ' 5. 电:特 ' 6. 栅极电荷特 www.onsemi.cn 4 250 FCH47N60 3.0 1.2 RDS(ON), (Normalized) Drain−Source On−Resistance BVDSS, (Normalized) Drain−Source Breakdown Voltage 能特& ('8n) 1.1 1.0 *Notes: 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 −100 0 −50 50 100 150 2.5 2.0 1.5 1.0 0.0 −100 200 *Notes: 1. VGS = 10 V 2. ID = 47 A 0.5 −50 TJ, Junction Temperature [°C] ' 7. =穿电4,/'温8的系 ' 8. !通电阻,/温8的系 ID, Drain Current [A] 100 s 1 ms 101 DC 10 ms 100 10−1 *Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 10−2 0 10 200 50 Operation in This Area is Limited by RDS(on) 40 30 20 10 101 102 VDS, Drain−Source Voltage [V] 0 103 50 25 ' 9. @ABC) ZJC(t), I"q [°C/W] ID, Drain Current [A] 102 0 50 100 150 TJ, Junction Temperature [°C] 75 100 125 TC, Case Temperature [°C] ' 10. 漏极电流E温的系 D = 0.5 10−1 *Notes: 1. ZJC(t) = 0.3°C/W Max. 2. Duty Factor, D = t1/t2 3. TJM − TC = PDM * ZJC(t) 0.2 0.1 10−2 10−5 PDM 0.05 0.02 0.01 t1 t2 single pulse 10−4 10−3 10−2 10−1 t1，op0L [1] ' 11. 瞬#热FG线 www.onsemi.cn 5 100 101 150 FCH47N60 VGS RL Qg VDS VGS Qgs Qgd DUT IG = r Charge ' 12. 栅极电荷测试电路波H RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% 10% tr td(on) td(off) ton tf toff ' 13. 阻$测试电路波H L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp ' 14. 非箝 电I$测试电路波H www.onsemi.cn 6 Time FCH47N60 + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VSD VDD Body Diode Forward Voltage Drop ' 15. %极管JK dv/dt L测试电路波H SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.cn 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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