FCH47N60F-F133

MOSFET – N-Channel, SUPERFET), FRFET) 600 V, 47 A, 73 mW FCH47N60F Description SUPERFET MOSFET is ON Semiconductor’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance,dv/dt rate and higher avalanche energy. Consequently, SUPERFET MOSFET is very suitable for the switching power applications such as PFC, server / telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. www.onsemi.com VDS RDS(ON) MAX ID MAX 600 V 73 mW @ 10 V 47 A D G Features • • • • • • S 650 V @ TJ = 150°C Typ. RDS(on) = 58 mW Ultra Low Gate Charge (Typ. Qg = 210 nC) Low Effective Output Capacitance (Typ. Cosseff. = 420 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant N-CHANNEL MOSFET S D G Applications • Solar Inventer • AC−DC Power Supply TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FCH 47N60F $Y &Z &3 &K FCH47N60F = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 December, 2019 − Rev. 4 1 Publication Order Number: FCH47N60F/D FCH47N60F ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol VDSS Parameter FCH47N60F−F133 Unit 600 V Drain to Source Voltage ID Drain Current − −Continuous (TC = 25°C) −Continuous (TC = 100°C) 47 29.7 A A Drain Current −Pulsed (Note 1) 141 A Gate−Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ IAR Avalanche Current (Note 1) 47 A EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns 417 3.33 W W/°C IDM VGSS PD Power Dissipation TJ, TSTG TL (TC = 25°C) −Derate Above 25°C Operating and Storage Temperature Range −55 to + 150 °C 300 °C Maximum Lead Temperature for Soldering Purpose, ⅛ from Case for 5 second Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. IAS = 18 A, VDD = 50 V, RG = 25 W, Starting TJ = 25 °C 3. ISD ≤ 47 A, di/dt ≤ 1200 A/ms, VDD ≤ BVDSS, Starting TJ = 25 °C. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FCH47N60F FCH47N60F−F133 TO−247−3 − − 30 Units THERMAL CHARACTERISTICS Symbol Parameter Value Unit °C/W RqJC Thermal Resistance, Junction to Case, Max. 0.3 RqJA Thermal Resistance, Junction to Ambient, Max. (Note 34) 41.7 www.onsemi.com 2 FCH47N60F ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit ID = 250 mA, VGS = 0 V, TJ = 25°C 600 − − V ID = 250 mA, VGS = 0 V, TJ = 150°C − 650 − V Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − 0.6 − V/°C BVDS Drain−Source Avalanche Breakdown Voltage ID = 47 A, VGS = 0 V − 700 − V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V − − 10 mA VDS = 480 V, TC = 125°C − − 100 mA OFF CHARACTERISTICS BVDSS DBVDSS / DTJ Drain to Source Breakdown Voltage IGSSF Gate−Body Leakage Current, Forward VGS = 30 V, VDS = 0 V − − 100 nA IGSSR Gate−Body Leakage Current, Reverse VGS = −30 V, VDS = 0 V − − −100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA 3 − 5 V RDS(on) Static Drain−Source On−Resistance VGS = 10 V, ID = 23.5 A − 0.062 0.073 W Forward Transconductance VDS = 40 V, ID = 23.5 A − 40 − S VDS = 25 V, VGS = 0 V, f = 1 MHz − 5900 8000 pF − 3200 4200 pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance − 250 − pF Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz − 160 − pF Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 420 − pF VDD = 300 V, ID = 47 A, RG = 25 W (Note 4) − 185 430 ns − 210 450 ns Cosseff. SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn−On Rise Time td(off) Turn-Off Delay Time − 520 1100 ns tf Turn−Off Fall Time − 75 160 ns − 210 270 nC − 38 − nC − 110 − nC Maximum Continuous Drain−Source Diode Forward Current − − 47 A ISM Maximum Pulsed Drain−Source Diode Forward Current − − 141 A VSD Source to Drain Diode Voltage VGS = 0 V, IS = 47 A − − 1.4 V trr Reverse Recovery Time − 240 − ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 47 A, dIF/dt = 100 A/ms − 2.04 − mC Qg Total Gate Charge Qgs Gate−Source Charge Qgd Gate−Drain Charge VDS = 480 V, ID = 47 A, VGS = 10 V (Note 4) DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially Independent of Operating Temperature Typical Characteristics. www.onsemi.com 3 FCH47N60F TYPICAL CHARACTERISTICS 101 Bottom: ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Top: 102 *Notes: 1. 250 ms Pulse Test 2. TC = 25°C 100 10−1 102 150°C 25°C 101 −55°C *Notes: 1. VDS = 40 V 2. 250 ms Pulse Test 100 2 100 101 VDS, Drain−Source Voltage [V] 4 6 8 VGS, Gate−Source Voltage [V] 10 Figure 2. Transfer Characteristics Figure 1. On−Region Characteristics IDR, Reverse Drain Current [A] RDS(ON) [W], Drain−Source On−Resistance 0.25 0.20 VGS = 10 V 0.15 0.10 VGS = 20 V 0.05 *Note: TJ = 25°C 0.00 0 20 40 60 102 101 150°C *Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 100 0.2 80 100 120 140 160 180 200 ID, Drain Current [A] VGS, Gate−Source Voltage [V] Capacitance [pF] Coss 15000 Ciss 10000 5000 0 *Notes: 1. VGS = 0 V 2. f = 1 MHz Crss 10−1 100 0.6 0.8 1.0 1.2 1.4 VSD, Source−Drain Voltage [V] 1.6 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 20000 0.4 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 3. On−Resistance Variation vs. Drain Current and Gate voltage 25000 25°C VDS = 250 V VDS = 400 V 8 6 4 2 0 101 VDS = 100 V 10 *Note: ID = 47 A 0 50 100 150 QG, Total Charge [nC] VDS, Drain−Source Voltage [V] 200 Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics www.onsemi.com 4 250 FCH47N60F 3.0 1.2 RDS(ON), (Normalized) Drain−Source On−Resistance BVDSS, (Normalized) Drain−Source Breakdown Voltage TYPICAL CHARACTERISTICS 1.1 1.0 *Notes: 1. VGS = 0 V 2. ID = 250 mA 0.9 0.8 −100 −50 0 50 100 150 TJ, Junction Temperature [°C] 2.5 2.0 1.5 1.0 *Notes: 1. VGS = 10 V 2. ID = 23.5 A 0.5 0.0 200 −100 −50 Figure 7. Breakdown Voltage Variation vs. Temperature ID, Drain Current [A] 100 ms 1 ms 101 10 ms DC *Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 101 102 VDS, Drain−Source Voltage [V] 150 200 40 30 20 10 0 25 103 D = 0.5 0.2 0.1 P DM 0.05 0.02 0.01 10−5 75 100 125 TC, Case Temperature [°C] *Notes: 1. ZqJC(t) = 0.3°C/W Max 2. Duty Factor, D = t1/t2 3. TJM − TC = PDM * ZqJC(t) 10−1 10−2 50 Figure 10. Maximum Drain Current vs. Case Temperature Figure 9. Safe Operating Area ZqJC(t), Thermal Response [°C/W] ID, Drain Current [A] 100 50 102 10−1 100 50 Figure 8. On−Resistance Variation vs. Temperature Operation in This Area is Limited by RDS(on) 100 0 TJ, Junction Temperature [°C] t1 t2 Single Pulse 10−4 10−3 10−2 10−1 100 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve www.onsemi.com 5 101 150 FCH47N60F VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 12. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 13. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS BV DSS BV DSS * V DD 2 ID(t) VDD VDS(t) tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 Time FCH47N60F + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO−247−3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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