FDFS6N548

FDFS6N548 Integrated N-Channel POWERTRENCH® MOSFET and Schottky Diode Description The FDFS6N548 combines the exceptional performance of ON Semiconductor’s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO−8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on−state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. www.onsemi.com C Features Pin 1 • Max rDS(on) = 23 mW at VGS = 10 V, ID = 7 A • Max rDS(on) = 30 mW at VGS = 4.5 V, ID = 6 A • VF < 0.45 V @ 2 A • • • C D D A A S G SOIC8 CASE 751EB VF < 0.28 V @ 100 mA Schottky and MOSFET Incorporated into Single Power Surface Mount SO−8 Package Electrically Independent Schottky and MOSFET Pinout for Design Flexibility Low Miller Charge Application • DC/DC Conversion A 1 8 C A 2 7 C S 3 6 D G 4 5 D MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain−to−Source Voltage 30 V ORDERING INFORMATION VGS Gate−to−Source Voltage ±20 V Continuous (Note 1a) 7 A See detailed ordering and shipping information on page 6 of this data sheet. Pulsed 30 Dual Operation 2 Single Operation (Note 1a) 1.6 ID PD Drain Current Power Dissipation W EAS Drain−Source Avalanche Energy (Note 3) 12 mJ VRRM Schottky Repetitive Peak Reverse Voltage 30 V Schottky Average Forward Current (Note 1a) 2 A −55 to +150 °C IO TJ, TSTG Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJA Thermal Resistance, Junction−to−Ambient (Note 1a) 78 _C/W RqJC Thermal Resistance, Junction−to−Case (Note 1) 40 _C/W © Semiconductor Components Industries, LLC, 2007 July, 2018 − Rev. 2 1 Publication Order Number: FDFS6N548/D FDFS6N548 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min VGS = 0 V, ID = 250 mA 30 Typ Max Unit OFF CHARACTERISTICS BVDSS Drain−to−Source Breakdown Voltage V DBVDSS/ DTJ Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VGS = 0 V, VDS = 24 V 1 VGS = 0 V, VDS = 24 V, TJ = 125°C 250 VGS = ±20 V, VDS = 0 V ±100 IGSS Gate–to−Source Leakage Current 22 mV/°C mA nA ON CHARACTERISTICS VGS(th) Gate−to−Source Threshold Voltage VDS = VGS, ID = 250 mA DVGS(th)/ DTJ Gate−to−Source Threshold Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C −5 VGS = 10 V, ID = 7 A 19 23 RDS(on) gFS Drain−to−Source On−Resistance Forward Transconductance 1.2 1.8 2.5 V mV/°C mW VGS = 4.5 V, ID = 6 A 23 30 VGS = 10 V, ID = 7 A, TJ = 125°C 26 31 VDS = 5 V, ID = 7 A 20 VDS = 15 V, VGS = 0 V, f = 1 MHz 525 700 pF 100 133 pF 65 100 pF S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1 MHz 0.8 VDD = 15 V, ID = 7 A, VGS = 10 V, RGEN = 6 W 6 12 ns 2 10 ns 14 25 ns 2 10 ns 9 13 nC W SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg(TOT) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Total Gate Charge at 10 V VDS = 15 V, ID = 7 A, VGS = 10 V Qgs Gate–to−Source Gate Charge 1.5 nC Qgd Gate–to−Drain “Miller” Charge 2 nC DRAIN–SOURCE DIODE CHARACTERISTICS VSD Source−to−Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 7 A (Note 2) 0.90 1.25 V IF = 7 A, di/dt = 100 A/ms 23 35 ns 14 21 nC SCHOTTKY DIODE CHARACTERISTICS VR Reverse Breakdown Voltage IR Reverse Leakage VF Forward Voltage IR = −1 mA VR = −10 V IF = 100 mA IF = 2 A −30 V TJ = 25°C −39 TJ = 125°C −18 TJ = 25°C 225 TJ = 125°C 140 TJ = 25°C 364 TJ = 125°C 290 −250 mA mA 280 mV 450 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FDFS6N548 1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a) 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. 3. Starting TJ = 25°C, L = 1 mH, IAS = 5.0 A, VDD = 27 V, VGS = 10 V. www.onsemi.com 3 c) 135°C/W when mounted on a minimum pad FDFS6N548 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) ID, DRAIN CURRENT (A) VGS = 10V VGS = 4.5V 25 VGS = 3.5V 20 VGS = 4V 15 VGS = 3V 10 5 0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5%MAX 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 30 4 VGS = 3.5V 2.0 1.0 0.5 rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 0.8 0.6 −75 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE(oC) Figure 3. Normalized On−Resistance vs. Junction Temperature IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 ID = 7A 50 15 20 25 30 VDD = 5V 20 15 TJ = 25 oC 10 TJ = 150 oC TJ = −55 oC 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 40 TJ = 150 oC 30 TJ = 25 oC 20 10 2 60 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0 5 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On−Resistance vs. Gate−to−Source Voltage 30 0 0 60 1.0 5 VGS = 10V PULSE DURATION = 80 μs DUTY CYCLE = 0.5%MAX Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 1.2 25 VGS = 4.5V ID, DRAIN CURRENT(A) ID = 7A VGS = 10V 1.4 VGS = 4V 1.5 Figure 1. On Region Characteristics 1.6 VGS = 3V 2.5 1 0.1 TJ = 25 oC TJ = 150 oC TJ = −55 oC 0.01 0.001 0.0 4 VGS = 0V 10 Figure 5. Transfer Characteristics 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 FDFS6N548 10 1000 Ciss ID = 7A 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) VDD = 15V 6 VDD = 10V VDD = 20V 4 2 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 Coss f = 1MHz VGS = 0V 40 10 0.1 30 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs. Drain−to−Source Voltage 8 7 6 5 8 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) Figure 7. Gate Charge Characteristics 4 TJ = 25oC 3 TJ = 125 oC 2 6 VGS = 10V 4 VGS = 4.5V 2 RqJA = 78 oC/W 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) 10 0 20 P(PK), PEAK TRANSIENT POWER (W) 10 100us 0.01 1ms 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25oC 0.1 1 10 75 100 125 150 Figure 10. Maximum Continuous Drain Current vs. Ambient Temperature 300 1 50 o 50 0.1 25 TA, AMBIENT TEMPERATURE( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss 100 100ms 1s 10s DC 80 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK 100 CURRENT AS FOLLOWS: I = I25 150 – TA 125 TA = 25 oC 10 SINGLE PULSE 1 0.5 −4 10 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area −3 10 −2 −1 0 1 10 10 10 10 t, PULSE WIDTH (s) 2 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 FDFS6N548 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) IR , REVERSE LEAKAGE CURRENT (mA) IF , FORWARD LEAKAGE CURRENT (A) 30 10 1 TJ = 125 oC 0.1 TJ = 25 oC 0.01 0.001 0.0 0.4 0.8 1.2 1.6 V F , FORWARD VOLTAGE (V) 2.0 100 10 TJ = 125 oC 1 0.1 TJ = 25 oC 0.01 0.001 0 2 NORMALIZED THERMAL IMPEDANCE, Z qJA 0.1 10 15 20 25 VR , REVERSE VOLTAGE (V) Figure 13. Schottky Diode Forward Characteristics 1 5 Figure 14. Schottky Diode Reverse Characteristics DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t 2 PEAK TJ = P DM x ZqJA x RqJA + TA SINGLE PULSE 3E−3 −4 10 −3 10 −2 −1 10 0 10 10 1 2 10 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 15. Transient Thermal Response Curve PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping† FDFS6N548 FDFS6N548 SO−8 330 mm 12 mm 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751EB ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13735G SOIC8 DATE 24 AUG 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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