FDFS2P102

FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description Features The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. • –3.3 A, –20 V. • VF < 0.39 V @ 1 A (TJ = 125 oC). VF < 0.47 V @ 1 A. VF < 0.58 V @ 2 A. • Schottky and MOSFET incorporated into single power surface mount SO-8 package. • Electrically independent Schottky and MOSFET pinout for This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Applications • • • RDS(ON) = 0.125 Ω @ VGS = –10 V RDS(ON) = 0.200 Ω @ VGS = –4.5 V. design flexibility. DC/DC converters Load Switch Motor Drives D D C C G S A Pin 1 8 C A 2 7 C S 3 6 D G 4 5 D A MOSFET Maximum Ratings Symbol A 1 T A=25 oC unless otherwise noted Parameter V DSS Drain-Source Voltage V GSS Gate-Source Voltage ID Drain Current - Continuous (Note 1a) - Pulsed PD (Note 1a) Schottky Diode Maximum Ratings Repetitive Peak Reverse Voltage Average Forward Current -3.3 A V W 1.6 (Note 1b) 1 (Note 1c) 0.9 Operating and Storage Temperature Range IO V 2 Power Dissipation for Single Operation V RRM Units -20 ± 20 -20 Power Dissipation for Dual Operation T J, T STG Ratings -55 to +150 °C 20 V 1 A o T A=25 C unless otherwise noted (Note 1a) Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDFS2P102 FDFS2P102 13 12mm 2500 units 2000 Fairchild Semiconductor International FDFS2P102 Rev. E FDFS2P102 October 2000 Symbol TA = 25 C unless otherwise noted Parameter Off Characteristics Test Conditions Min -20 BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA VDS = - 16 V, VGS = 0 V TJ = 55°C IGSSF Gate-Body Forward Leakage IGSSR Gate-Body Reverse Leakage On Characteristics Typ Max Units V µA VGS = 20 V, VDS = 0 V -1 -10 100 nA VGS = -20 V, VDS = 0 V -100 nA -1.4 -2 0.100 0.167 0.125 0.2 V Ω (Note 2) VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance ID(on) On-State Drain Current VDS = VGS, ID = -250 µA VGS = -10 V, ID = -3.3 A VGS = -4.5 V, ID = -2.5 A VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -10 V, ID = -3.3 A 5 VDS = -10 V, VGS = 0 V, f = 1.0 MHz 270 pF 150 pF 45 pF -1 -10 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge (Note 2) VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω VDS = -5 V, ID = -3.3 A, VGS = -10 V, 8 16 7 14 ns ns 17 27 ns 10 1.8 ns 7 10 nC -1.3 A -1.2 V 250 18 0.47 0.39 0.58 0.53 uA mA V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A Schottky Diode Characteristics IR Reverse Leakage VR = 20 V VF Forward Voltage IF = 1 A IF = 2 A (Note 2) -0.8 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C Thermal Characteristics R JA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R JC Thermal Resistance, Junction-to-Case (Note 1) 40 Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.04 in2 pad of 2 oz. copper. c) 125° C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDFS2P102 Rev. E FDFS2P102 Electrical Characteristics FDFS2P102 Typical Characteristics 2 VGS= -10V -7.0V -6.0V 16 12 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE - I D, DRAIN-SOURCE CURRENT (A) 20 -5.0V -4.5V 8 -4.0V -3.5V 4 0 0 1 2 3 4 -V DS , DRAIN-SOURCE VOLTAGE (V) 1.8 VGS = 4.0V 1.6 1.4 5.0V 1.2 6.0V 10V 0.8 5 0 10 20 30 40 50 60 ID, DIRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.06 ID = 3.8A 1.8 RDS(ON), ON-RESISTANCE (OHM) ID = 7.6A VGS = 10V 1.6 1.4 1.2 1 0.8 0.6 0.4 0.05 o TA = 125 C 0.04 0.03 0.02 TA = 25oC 0.01 0 -50 -25 0 25 50 75 100 125 150 3 4 5 TJ, JUNCTION TEMPERATURE (oC) 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 60 100 TA = -55oC 50 25oC IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 7.0V 1 Figure 1. On-Region Characteristics. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V o 125 C 40 30 20 10 0 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFS2P102 Rev. E (continued) 10 2400 ID = 7.6A f = 1MHz VGS = 0 V VDS = 10V 20V 8 2000 40V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDFS2P102 Typical Characteristics 6 4 2 CISS 1600 1200 800 COSS 400 CRSS 0 0 0 5 10 15 20 25 30 35 0 Qg, GATE CHARGE (nC) 20 30 40 50 60 70 80 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. Figure 7. Gate-Charge Characteristics. 0.001 I R, R EVE R SE CU R R EN T (A ) 10 I F, FORWARD CURRENT (A) 10 5 TJ = 125 C 2 0.0005 25 C 1 0.5 TJ = 25 C 0.0002 0.2 0.1 0.0001 0 0.1 0.2 0.3 0.4 V F , FORWARD VOLTAGE (V) 0.5 0.6 Figure 9. Schottky Diode Forward Voltage. 0 5 10 15 V R , R EVER SE V OLTA GE (V) 20 Figure 10. Schottky Diode Reverse Current. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.1 0.05 0.02 R θJA (t) = r(t) * R θJA R θJA =135 C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 Single Pulse Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 t2 TJ - TA = P * RθJA (t) 0.005 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDFS2P102 Rev. E TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1