FDFS2P102A

FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. • –3.3 A, –20V RDS(ON) = 125 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ @ VGS = –4.5 V • VF < 0.39 V @ 1 A (TJ = 125°C) VF < 0.47 V @ 1 A VF < 0.58 V @ 2 A This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. • Schottky and MOSFET incorporated into single power surface mount SO-8 package • Electrically independent Schottky and MOSFET pinout for design flexibility D C D C SO-8 S Pin 1 A G A Absolute Maximum Ratings Symbol A 1 8 C A 2 7 C S 3 6 D G 4 5 D TA=25oC unless otherwise noted MOSFET Drain-Source Voltage Ratings –20 Units VDSS Parameter VGSS MOSFET Gate-Source Voltage ±20 V ID Drain Current (Note 1a) –3.3 –10 A 2 W (Note 1a) 1.6 – Continuous – Pulsed PD Power Dissipation for Dual Operation Power Dissipation for Single Operation TJ, TSTG (Note 1b) 1 (Note 1c) 0.9 Operating and Storage Junction Temperature Range VRRM Schottky Repetitive Peak Reverse Voltage IO Schottky Average Forward Current (Note 1a) V –55 to +150 °C 20 V 1 A Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDFS2P102A FDFS2P102A 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDFS2P102A Rev A1(W) FDFS2P102A August 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = –250 µA –20 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA –3 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID = –250 µA,Referenced to 25°C –23 mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = –250 µA ID = –250 µA,Referenced to 25°C –1 –1.8 4.4 VGS = –10 V, ID = –3.3 A VGS = –4.5 V, ID = –2.5 A VGS=–10 V, ID =–3.3A, TJ=125°C 96 152 137 mV/°C 125 200 190 –10 mΩ ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –5V, ID = –3.3 A 4.6 A VDS = –10 V, f = 1.0 MHz 182 pF 60 pF 24 pF S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) V GS = 0 V, (Note 2) 5 10 ns 14 52 ns Turn–Off Delay Time 11 20 ns tf Turn–Off Fall Time 2 4 ns Qg Total Gate Charge 2.1 3.0 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = –10 V, VGS = –10 V, VDS = –10 V, VGS = –5 V ID = –1 A, RGEN = 6 Ω ID = –3.3 A, 1.0 nC 0.6 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A (Note 2) –0.8 –1.3 A –1.2 V 50 18 0.47 0.39 0.58 0.53 µA mA V Schottky Diode Characteristics IR Reverse Leakage VR = 20 V VF Forward Voltage IF = 1 A IF = 2 A TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C FDFS2P102A Rev A1(W) FDFS2P102A Electrical Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 78 °C/W (Note 1) 40 °C/W Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 2 0.5in pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDFS2P102A Rev A1(W) FDFS2P102A Thermal Characteristics FDFS2P102A Typical Characteristics 2.2 -ID, DRAIN-SOURCE CURRENT (A) VGS = -10V -6.0V -7.0V 8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 -5.0V -4.5V -4.0V 6 -3.5V 4 2 0 2 VGS = -4.0V 1.8 -4.5V 1.6 -5.0V 1.4 -6.0V 1.2 -7.0V -10V 1 0.8 0 1 2 3 4 5 0 2 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 10 0.52 ID = -3.3A VGS = -10V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.2 1 0.8 0.6 ID = -1.7A A 0.46 0.4 0.34 0.28 TA = 125oC 0.22 0.16 TA = 25oC 0.1 0.04 -50 -25 0 25 50 75 100 125 150 2 4 o Figure 3. On-Resistance Variation with Temperature. 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55oC -IS, REVERSE DRAIN CURRENT (A) 10 VDS = -5V 6 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) -ID, DRAIN CURRENT (A) 6 - ID, DRAIN CURRENT (A) 25oC 8 125oC 6 4 2 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFS2P102A Rev A1(W) FDFS2P102A Typical Characteristics 300 ID = -3.3A VDS = -5V 8 -15V 6 4 CISS 200 150 100 COSS 50 2 CRSS 0 0 0 1 2 Qg, GATE CHARGE (nC) 3 0 4 IR, REVERSE LEAKAGE CURRENT (A) TJ = 125oC 1 TJ = 25oC 0.1 0.01 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 15 20 1.0E-02 TJ = 125oC 1.0E-03 1.0E-04 1.0E-05 TJ = 25oC 1.0E-06 1.0E-07 0.8 0 5 10 15 20 VR, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 Figure 8. Capacitance Characteristics. 10 0 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. IF, FORWARD LEAKAGE CURRENT (A) f = 1MHz VGS = 0 V 250 -10V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 Figure 10. Schottky Diode Reverse Current. 1 D = 0.5 R θJA (t) = r(t) + R θJA R θJA = 135 °C/W 0.2 0.1 P(pk) 0.1 t1 t2 0.05 T J - T A = P * R θJA (t) Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.01 0.001 0.01 0.1 1 10 100 1000 t 1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDFS2P102A Rev A1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET  VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3