FDFS2P106A

FDFS2P106A June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDFS2P106A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features • –3.0 A, –60V RDS(ON) = 110 mΩ @ VGS = –10 V RDS(ON) = 140 mΩ @ VGS = –4.5 V • VF < 0.45 V @ 1 A (TJ = 125°C) VF < 0.53 V @ 1 A VF < 0.62 V @ 2 A • Schottky and MOSFET incorporated into single power surface mount SO-8 package • Electrically independent Schottky and MOSFET pinout for design flexibility D D C C A1 A2 S3 G S A 8C 7C 6D 5D SO-8 Pin 1 G4 A TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –60 ±20 (Note 1a) Units V V A W –3 –10 2 1.6 1 0.9 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG VRRM IO Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) –55 to +150 45 1 °C V A Package Marking and Ordering Information Device Marking FDFS2P106A Device FDFS2P106A Reel Size 13’’ Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDFS2P106A Rev B(W) FDFS2P106A Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 µA Min –60 Typ Max Units V Off Characteristics ID = –250 µA, Referenced to 25°C VDS = –48 V, VGS = 20V, VGS = –20 V VGS = 0 V VDS = 0 V VDS = 0 V ID = –250 µA –60 –1 100 –100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, –1 –1.6 4 91 112 150 –3 V mV/°C ID = –250 µA,Referenced to 25°C VGS = –10 V, ID = –3A VGS = –4.5 V, ID = –2.7 A VGS = –10 V, ID = –3 A, TJ=125°C VGS = –10 V, VDS = –5 V VDS = –5 V, ID = –3.3 A 110 140 192 mΩ ID(on) gFS –10 8 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = –30 V, f = 1.0 MHz V GS = 0 V, 714 84 33 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –30 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω 8 11 28 8.5 15 19 45 17 21 ns ns ns ns nC nC nC VDS = –30V, VGS = –10 V ID = –3A, 15 2 3 Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A (Note 2) –1.3 –0.8 –1.2 A V FDFS2P106A Rev B(W) FDFS2P106A Electrical Characteristics (continued) Symbol IR VF TA = 25°C unless otherwise noted Parameter Reverse Leakage Forward Voltage Test Conditions VR = 45 V IF = 1 A IF = 2 A TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C Min Typ 2.8 2.2 0.44 0.34 0.49 0.42 Max Units 80 80 0.53 0.45 0.62 0.57 µA mA V Schottky Diode Characteristics Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDFS2P106A Rev B(W) FDFS2P106A Typical Characteristics 10 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -4.5V -3.5V -6.0V -ID, DRAIN-SOURCE CURRENT (A) 2 VGS = -3.0V 1.8 1.6 1.4 1.2 1 0.8 -3.5V -4.0V -4.5V -6.0V -10V 8 -3.0V 6 4 2 -2.5V 0 0 1 2 3 4 5 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 4 6 8 10 - ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.29 RDS(ON), ON-RESISTANCE (OHM) 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 ID = -3A VGS = -10V 0.24 ID = -1.5A A TA = 125oC 0.19 0.14 TA = 25oC 0.09 0.04 -25 0 25 50 75 100 o 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 25 C 125oC o -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 8 TA = -55oC VGS = 0V 10 TA = 125oC 1 6 25oC 0.1 4 -55oC 0.01 0.001 0.0001 2 0 1 1.5 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFS2P106A Rev B(W) FDFS2P106A Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) 1000 ID = -3A 8 VDS = -20V -30V CAPACITANCE (pF) f = 1MHz VGS = 0 V 800 CISS 600 -40V 6 4 400 COSS 200 2 CRSS 0 0 0 3 6 9 Qg, GATE CHARGE (nC) 12 15 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 IF, FORWARD LEAKAGE CURRENT (A) Figure 8. Capacitance Characteristics. 1.00E-01 1.00E-02 1.00E-03 1.00E-04 1.00E-05 1.00E-06 1.00E-07 1.00E-08 TJ = 25oC TJ = 125oC TJ = 125oC 1 0.1 TJ = 25oC 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V) IR, REVERSE LEAKAGE CURRENT (A) 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 135 °C/W P(pk) 0.2 0.1 0.1 t1 0.05 0.02 0.01 SINGLE PULSE t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDFS2P106A Rev B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST  FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET  VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3