FDFS2P106A

FDFS2P106A FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode Features General Description • –3.0 A, –60V RDS(ON) = 110 mΩ @ VGS = –10 V RDS(ON) = 140 mΩ @ VGS = –4.5 V The FDFS2P106A combines the exceptional performance of ON Semiconductor's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. • VF < 0.45 V @ 1 A (TJ = 125°C) VF < 0.53 V @ 1 A VF < 0.62 V @ 2 A This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. • Schottky and MOSFET incorporated into single power surface mount SO-8 package • Electrically independent Schottky and MOSFET pinout for design flexibility D D C C A 1 8 C A 2 7 C S 3 6 D G 4 5 D G SO-8 S A Pin 1 A Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted MOSFET Drain-Source Voltage Ratings –60 Units VDSS Parameter VGSS MOSFET Gate-Source Voltage ±20 V ID Drain Current (Note 1a) –3 –10 A 2 W (Note 1a) 1.6 – Continuous – Pulsed PD Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1b) 1 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range VRRM Schottky Repetitive Peak Reverse Voltage IO Schottky Average Forward Current (Note 1a) –55 to +150 V °C 45 V 1 A Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDFS2P106A FDFS2P106A 13’’ 12mm 2500 units 2001 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Publication Order Number: FDFS2P106A/D Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = –250 µA –60 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1 IGSSF Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA ID = –250 µA On Characteristics VGS = 0 V, ID = –250 µA, Referenced to 25°C –60 mV/°C µA (Note 2) –1 –1.6 VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA,Referenced to 25°C 4 91 112 150 –3 V mV/°C 110 140 192 ID(on) On–State Drain Current VGS = –10 V, ID = –3A VGS = –4.5 V, ID = –2.7 A VGS = –10 V, ID = –3 A, TJ=125°C VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –3.3 A 8 S VDS = –30 V, f = 1.0 MHz V GS = 0 V, 714 pF –10 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 84 pF 33 pF (Note 2) VDD = –30 V, VGS = –10 V, VDS = –30V, VGS = –10 V ID = –1 A, RGEN = 6 Ω ID = –3A, 8 15 ns 11 19 ns 28 45 ns 8.5 17 ns 15 21 nC 2 nC 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A www.onsemi.com 2 (Note 2) –0.8 –1.3 A –1.2 V FDFS2P106A Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units 2.8 2.2 0.44 0.34 0.49 0.42 80 80 0.53 0.45 0.62 0.57 Schottky Diode Characteristics IR Reverse Leakage VR = 45 V VF Forward Voltage IF = 1 A TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 2 A µA mA V Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 78 °C/W (Note 1) 40 °C/W Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% www.onsemi.com 3 c) 135°C/W when mounted on a minimum pad. FDFS2P106A Electrical Characteristics (continued) FDFS2P106A Typical Characteristics 2.2 10 -4.5V -6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN-SOURCE CURRENT (A) VGS = -10V -3.5V 8 -3.0V 6 4 -2.5V 2 2 VGS = -3.0V 1.8 1.6 -3.5V 1.4 -4.0V -4.5V 1.2 -6.0V -10V 1 0.8 0 0 1 2 3 4 5 0 2 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 10 0.29 ID = -3A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 ID = -1.5A A 0.24 TA = 125oC 0.19 0.14 TA = 25oC 0.09 0.04 -50 -25 0 25 50 75 100 125 2 150 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 100 TA = -55oC -IS, REVERSE DRAIN CURRENT (A) Figure 3. On-Resistance Variation with Temperature. VDS = -5V -ID, DRAIN CURRENT (A) 6 - ID, DRAIN CURRENT (A) o 25 C 8 125oC 6 4 2 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1 1.5 2 2.5 3 3.5 4 0 Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 4 FDFS2P106A Typical Characteristics 1000 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3A VDS = -20V f = 1MHz VGS = 0 V -30V 800 CAPACITANCE (pF) 8 -40V 6 4 CISS 600 400 COSS 200 2 CRSS 0 0 0 0 3 6 9 Qg, GATE CHARGE (nC) 12 15 IR, REVERSE LEAKAGE CURRENT (A) IF, FORWARD LEAKAGE CURRENT (A) 15 20 Figure 8. Capacitance Characteristics. 10 TJ = 125oC 1 TJ = 25oC 0.01 0.001 1.00E-01 TJ = 125oC 1.00E-02 1.00E-03 1.00E-04 1.00E-05 TJ = 25oC 1.00E-06 1.00E-07 1.00E-08 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 10 VF, FORWARD VOLTAGE (V) 20 30 40 50 60 VR, REVERSE VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 0.1 5 Figure 10. Schottky Diode Reverse Current. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 135 °C/W 0.2 P(pk) 0.1 0.01 0.001 0.1 t1 0.05 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.01 0.1 1 10 100 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 5 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com