FDMC0310AS-F127

DATA SHEET www.onsemi.com SyncFETt – N-Channel, POWERTRENCH) VDS MAX 30 V rDS(on) MAX ID MAX 4.4 mW @ 10 V 21 A 5.2 mW @ 4.5 V 30 V, 21 A, 4.4 mW FDMC0310AS, FDMC0310AS-F127 Pin 1 G SS S D DD General Description The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode. Top Bottom WDFN8 3.3x3.3, 0.65P (MLP SAWN) CASE 511DH Pin 1 SS Features • Max rDS(on) = 4.4 mW at VGS = 10 V, ID = 19 A • Max rDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17.5 A • Advanced Package and Silicon Combination for Low rDS(on) and • • • • D D Top High Efficiency SyncFET Schottky Body Diode MSL1 Robust Package Design 100% UIL Tested These Devices are Pb−Free and are RoHS Compliant D SG DD Bottom WDFN8 3.3x3.3, 0.65P (MLP PUNCH) CASE 511DQ − Option C MARKING DIAGRAM Applications • • • • FDMC 0310AS ALYW Synchronous Rectifier for DC/DC Converters Notebook Vcore/GPU Low Side Switch Networking Point of Load Low Side Switch Telecom Secondary Side Rectification $Y&Z&2&K FDMC 0310AS FDMC0310AS = Device Code A = Assembly Site L = Wafer Lot Number YW = Assembly Start Week $Y = onsemi Logo &Z = Assembly Plant Code &2 = Numeric Date Code &K = Lot Code PIN CONNECTIONS D 5 4 G D 6 3 S D 7 2 S D 8 1 S ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2013 February, 2022 − Rev. 4 1 Publication Order Number: FDMC0310AS/D FDMC0310AS, FDMC0310AS−F127 MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Ratings Unit VDS Drain to Source Voltage 30 V VDSt Drain to Source Transient Voltage (tTransient < 100 ns) 33 V VGS Gate to Source Voltage (Note 1) ±20 V Continuous, TC = 25°C 21 A Continuous, TA = 25°C (Note 3a) 19 A Pulsed 100 A 66 mJ TC = 25°C 36 W TA = 25°C (Note 3a) 2.4 ID Parameter Drain Current EAS Single Pulse Avalanche Energy (Note 2) PD Power Dissipation TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. 2. EAS of 66 mJ is based on starting TJ = 25°C, L = 0.3 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V. 100% tested at L= 3 mH, IAS = 10.2 A. THERMAL CHARACTERISTICS Symbol Ratings Unit RqJC Thermal Resistance, Junction to Case Parameter 3.4 °C/W RqJA Thermal Resistance, Junction to Ambient (Note 3a) 53 3. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. b. 125°C/W when mounted on a minimum pad of 2 oz copper. a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper. www.onsemi.com 2 FDMC0310AS, FDMC0310AS−F127 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 − − V DBV DSS Breakdown Voltage Temperature Coefficient ID = 10 mA, referenced to 25°C − 26 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V − − 500 mA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V − − 100 nA 1.2 1.6 3.0 V DT J ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA DV GS(th) Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25°C − −5 − mV/°C Static Drain to Source On Resistance VGS = 10 V, ID = 19 A − 3.8 4.4 mW VGS = 4.5 V, ID = 17.5 A − 4.5 5.2 VGS = 10 V, ID = 19 A, TJ = 125°C − 4.5 5.8 VDS = 5 V, ID = 19 A − 106 − S VDS = 15 V, VGS = 0 V, f = 1 MHz − 2380 3165 pF DT J rDS(on) gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 885 1175 pF Crss Reverse Transfer Capacitance − 100 150 pF 0.1 0.7 2.5 W − 11 20 ns − 5 10 ns Turn−Off Delay Time − 30 48 ns Fall Time − 4 10 ns VGS = 0 V to 10 V VDD = 15 V, ID = 19 A − 37 52 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 19 A − 18 25 nC VDD = 15 V, ID = 19 A − 6 − nC − 6 − nC VGS = 0 V, IS = 2 A (Note 4) − 0.6 0.8 V VGS = 0 V, IS = 19 A (Note 4) − 0.8 1.2 V IF = 19 A, di/dt = 300 A/ms − 29 47 ns − 33 53 nC Rg Gate Resistance SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg Turn−On Delay Time Rise Time Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 19 A VGS = 10 V, RGEN = 6 W DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% www.onsemi.com 3 FDMC0310AS, FDMC0310AS−F127 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 5 VGS = 10 V VGS = 6 V VGS = 4.5 V VGS = 4 V 80 60 VGS = 3.5 V VGS = 3 V 40 20 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 100 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 4 VGS = 3 V 3 VGS = 3.5 V 2 1 0 2.0 0 20 40 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 12 1.2 1.0 0.8 0.6 −75 −50 −25 0 25 50 75 9 ID = 19 A 6 TJ = 125°C 3 0 100 125 150 TJ = 25°C 2 IS, REVERSE DRAIN CURRENT (A) ID, DRAI N CURRENT (A) VDS = 5 V TJ = 125°C TJ = 25°C 40 TJ = −55°C 20 0 1.0 1.5 2.0 2.5 3.0 3.5 6 8 10 Figure 4. On−Resistance vs. Gate to Source Voltage PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 60 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On−Resistance vs. Junction Temperature 80 100 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX TJ, JUNCTION TEMPERATURE (°C) 100 80 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage ID = 19 A VGS = 10 V 1.4 60 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.6 VGS = 10 V VGS = 4.5 V VGS = 6 V VGS = 4 V 4.0 VGS, GATE TO SOURCE VOLTAGE (V) 100 VGS = 0 V TJ = 125°C 10 TJ = 25°C TJ = −55°C 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 1.2 FDMC0310AS, FDMC0310AS−F127 TYPICAL CHARACTERISTICS 10 5000 ID = 19 A 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) (TJ = 25°C unless otherwise noted) (continued) VDD = 15 V 6 VDD = 10 V VDD = 20 V 4 2 0 Ciss 1000 Coss Crss 100 0 8 16 24 32 f = 1 MHz VGS = 0 V 50 0.1 40 1 Qg, GATE CHARGE (nC) Figure 8. Capacitance vs. Drain to Source Voltage 80 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 TJ = 25°C 10 TJ = 100°C TJ = 125°C 1 0.001 0.01 0.1 1 10 VGS = 10 V 60 VGS = 4.5 V 40 20 RqJC = 3.4°C/W LIMITED BY PACKAGE 0 25 50 75 100 tAV, TIME IN AVALANCHE (ms) P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100 ms 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RqJA = 125°C/W TA = 25°C 0.01 0.01 0.1 100 ms 1s 10 s DC 1 125 150 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 200 100 10 100 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability 0.1 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 1 10 10 100 200 1000 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 10 SINGLE PULSE RqJA = 125°C/W TA = 25°C 0.5 10−4 10−3 10−2 10−1 1 10 100 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1000 FDMC0310AS, FDMC0310AS−F127 TYPICAL CHARACTERISTICS ZqJA, NORMALIZED THERMAL IMPEDANCE (TJ = 25°C unless otherwise noted) (continued) 2 1 0.1 0.01 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.001 0.0001 10−4 t2 NOTES: DUTY FACTOR: D = t1 / t2 PEAK TJ = PDM x Z qJA x RqJA + TA SINGLE PULSE RqJA = 125°C/W (Note 3b) 10−3 10−2 10−1 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Junction−to−Ambient Transient Thermal Response Curve www.onsemi.com 6 100 1000 FDMC0310AS, FDMC0310AS−F127 TYPICAL CHARACTERISTICS (continued) SyncFET Schottky Body Diode Characteristics onsemi SyncFET process embeds a Schottky diode in parallel with POWERTRENCH MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMC0310AS. IDSS, REVERSE LEAKAGE CURRENT (A) Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 25 CURRENT (A) 20 15 10 di/dt = 300 A/ms 5 0 −5 0 50 100 150 200 250 0.01 TJ = 125°C 0.001 TJ = 100°C 0.0001 0.00001 TJ = 25°C 0.000001 0 TIME (ns) 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. SyncFET Body Diode Reverse Recovery Characteristics Figure 15. SyncFET Body Diode Reverse Leakage vs. Drain−Source Voltage PACKAGE MARKING AND ORDERING INFORMATION Device Marking Package Type Reel Size Tape Width Shipping† FDMC0310AS FDMC0310AS WDFN8 3.3x3.3, 0.65P MLP (SAWN) (Pb−Free) 13” 12 mm 3000 / Tape & Reel FDMC0310AS−F127 FDMC0310AS WDFN8 3.3x3.3, 0.65P MLP (PUNCH) (Pb−Free) 13” 12 mm 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. SyncFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O 0.05 C 3.30 DATE 31 JUL 2016 B A 8 2X (3.40) 2.37 5 0.45(4X) 2.15 3.30 (1.70) (0.40) KEEP OUT AREA (0.65) 0.70(4X) PIN#1 IDENT 0.10 C 0.05 C TOP VIEW 0.65 2X 1 4 1.95 0.75±0.05 0.42(8X) RECOMMENDED LAND PATTERN 0.15±0.05 0.08 C 0.025±0.025 NOTES: C SIDE VIEW SEATING PLANE A. DOES NOT CONFORM TO JEDEC REGISTRATION MO−229 B. DIMENSIONS ARE IN MILLIMETERS. 3.30±0.05 2.27±0.05 PIN #1 IDENT 1 (0.79) C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 2009. (0.50)4X D. LAND PATTERN RECOMMENDATION IS EXISTING INDUSTRY LAND PATTERN. 4 0.50±0.05 (4X) (0.35) (1.15) 3.30±0.05 R0.15 2.00±0.05 0.30±0.05 (3X) 8 5 0.65 1.95 0.35±0.05 (8X) 0.10 C A B 0.05 C BOTTOM VIEW DOCUMENT NUMBER: DESCRIPTION: 98AON13625G WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511DQ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13648G WDFN8 3.3X3.3, 0.65P DATE 31 OCT 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com WDFN8 3.3x3.3, 0.65P CASE 511DQ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13648G WDFN8 3.3X3.3, 0.65P DATE 31 OCT 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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