FDMC0310AS-F127

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Other names and brands may be claimed as the property of others. N-Channel PowerTrench® SyncFETTM General Description 30 V, 21 A, 4.4 mΩ Features „ Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A „ Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A „ Advanced package and silicon combination for low rDS(on) and high efficiency „ SyncFETTM Schottky Body Diode The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode. Applications „ Synchronous Rectifier for DC/DC Converters „ MSL1 robust package design „ Notebook Vcore/GPU low side switch „ 100% UIL tested „ Networking Point of Load low side switch „ RoHS Compliant „ Telecom secondary side rectification Bottom Top Pin 1 S S S G D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VDSt Drain to Source Transient Voltage ( t Transient < 100 ns) VGS Gate to Source Voltage (Note 4) Drain Current -Continuous TC = 25°C -Continuous TA = 25°C ID TJ, TSTG 33 V ±20 V (Note 1a) 19 A 100 Single Pulse Avalance Energy PD Units V 21 -Pulsed EAS Ratings 30 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 66 mJ 36 (Note 1a) Operating and Storage Junction Temperature Range W 2.4 -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.4 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC0310AS Device FDMC0310AS ©2013 Semiconductor Components Industries, LLC. August-2017, Rev.3 Package MLP 3.3X3.3 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMC0310AS/D FDMC0310AS N-Channel PowerTrench® SyncFETTM FDMC0310AS Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 30 V 26 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C VGS = 10 V, ID = 19 A 3.8 4.4 Static Drain to Source On Resistance VGS = 4.5 V, ID = 17.5 A 4.5 5.2 VGS = 10 V, ID = 19 A, TJ = 125 °C 4.5 5.8 VDS = 5 V, ID = 19 A 106 rDS(on) gFS Forward Transconductance 1.2 1.6 -5 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 0.1 2380 3165 pF 885 1175 pF 100 150 pF 0.7 2.5 Ω Switching Characteristics td(on) Turn-On Delay Time 11 20 ns tr Rise Time 5 10 ns td(off) Turn-Off Delay Time 30 48 ns tf Fall Time 4 10 ns VDD = 15 V, ID = 19 A, VGS = 10 V, RGEN = 6 Ω Qg Total Gate Charge VGS = 0 V to 10 V 37 52 nC Qg Total Gate Charge 18 25 nC Qgs Gate to Source Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 19 A Qgd Gate to Drain “Miller” Charge 6 nC 6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.6 0.8 VGS = 0 V, IS = 19 A (Note 2) 0.8 1.2 IF = 19 A, di/dt = 300 A/μs V 29 47 ns 33 53 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 66 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V. 100% tested at L= 3 mH, IAS = 10.2 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. www.onsemi.com 2 FDMC0310AS N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted 100 5 VGS = 6 V ID, DRAIN CURRENT (A) 80 VGS = 4.5 V VGS = 4 V 60 VGS = 3.5 V VGS = 3 V 40 20 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 4 VGS = 3 V 3 1 VGS = 4 V VGS = 4.5 V VGS = 6 V VGS = 10 V 0 2.0 0 40 60 80 100 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 1.6 12 ID = 19 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics ID = 19 A 9 6 TJ = 125 oC 3 TJ = 25 oC 0 -50 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs. Gate to Source Voltage Figure 3. Normalized On Resistance vs. Junction Temperature 100 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 80 ID, DRAIN CURRENT (A) VGS = 3.5 V 2 VDS = 5 V TJ = 125 oC 60 TJ = 25 oC 40 TJ = -55 oC 20 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS = 0 V TJ = 125 oC 10 TJ = 25 oC TJ = -55 oC 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 FDMC0310AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 19 A 8 Ciss VDD = 15 V 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 10 V VDD = 20 V 4 1000 Coss Crss 2 100 50 0.1 0 0 8 16 24 32 f = 1 MHz VGS = 0 V 40 1 Figure 7. Gate Charge Characteristics 80 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 Figure 8. Capacitance vs. Drain to Source Voltage 30 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC VGS = 10 V 60 VGS = 4.5 V 40 20 o RθJC = 3.4 C/W Limited by Package 1 0.001 0.01 0.1 1 10 0 25 100 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 200 100 P(PK), PEAK TRANSIENT POWER (W) 1000 100 μs 10 1 ms 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s DC TA = 25 oC 0.01 0.01 0.1 1 10 100200 100 10 SINGLE PULSE RθJA = 125 oC/W 1 TA = 25 oC 0.5 -4 10 10 -3 -2 10 -1 10 1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area www.onsemi.com 4 100 1000 FDMC0310AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W (Note 1b) 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 100 1000 FDMC0310AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFETTM Schottky body diode Characteristics ON Semiconductor SyncFETTM process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMC0310AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 25 CURRENT (A) 20 15 10 di/dt = 300 A/μs 5 0 -5 0 50 100 150 200 250 IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 TJ = 125 oC 0.001 TJ = 100 oC 0.0001 0.00001 TJ = 25 oC 0.000001 TIME (ns) 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) Figure 14. SyncFETTM Body Diode Reverse Recovery Characteristic Figure 15. SyncFETTM Body Diode Reverse Leakage vs. Drain-Source Voltage www.onsemi.com 6 30 FDMC0310AS N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) FDMC0310AS N-Channel PowerTrench® SyncFETTM ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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