FDMS8350LET40

FDMS8350LET40 MOSFET N‐Channel POWERTRENCH) 40 V, 300 A, 0.85 mW General Description This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features www.onsemi.com VDS RDS(ON) MAX ID MAX 40 V 0.85 mW @ 10 V 47 A 1.2 mW @ 4.5 V • Max RDS(on) = 0.85 mW at VGS = 10 V, ID = 47 A • Max RDS(on) = 1.2 mW at VGS = 4.5 V, ID = 38 A • Advanced Package and Silicon combination for Low rDS(on) and S High Efficiency • MSL1 Robust Package Design • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant G Applications D • Primary DC−DC MOSFET • Secondary Synchronous Rectifier • Load Switch N-CHANNEL MOSFET Top Bottom S Pin 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V Drain Current: Continuous (TC = 25°C) (Note 5) Continuous TC = 100°C (Note 5) Continuous, TA = 25°C (Note 1a) Pulsed (Note 4) 300 A ID EAS Single Pulse Avalanche Energy (Note 3) PD Power Dissipation: TC = 25°C TA = 25°C (Note 1a) TJ, TSTG Operating and Storage Junction Temperature Range D Pin 1 SS G D D D PQFN8 5X6, 1.27P CASE 483AG MARKING DIAGRAM 212 49 1464 S 1176 mJ W 125 3.33 −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. S S G $Y &Z &3 &K FDMS8350LET40 D $Y&Z&3&K FDMS 8350LET D D D = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2017 June, 2019 − Rev. 2 1 Publication Order Number: FDMS8350LET40/D FDMS8350LET40 THERMAL CHARACTERISTICS Symbol Parameter Value Unit °C/W RqJC Thermal Resistance, Junction to Case 1.2 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 45 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V DBVDSS /DTJ Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 mA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3.0 V BVDSS 40 V 17 mV/°C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA DVGS(th) /DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C Static Drain to Source On Resistance VGS = 10 V, ID = 47 A 0.68 0.85 VGS = 4.5 V, ID = 38 A 0.96 1.2 VGS = 10 V, ID = 47 A, TJ = 150°C 1.1 1.4 VDS = 5 V, ID = 47 A 247 rDS(on) gFS Forward Transconductance 1.0 1.8 −6 mV/°C mW S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg VDS = 20 V, VGS = 0 V, f = 1 MHz 11850 16590 pF 3430 4805 pF 69 100 pF 1.2 2.4 W 32 51 ns 19 34 ns Turn-Off Delay Time 74 118 ns Fall Time 15 27 ns VGS = 0 V to 10 V 156 219 nC VGS = 0 V to 4.5 V 73 102 nC Gate Resistance 0.1 SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg Turn-On Delay Time Rise Time Total Gate Charge VDD = 20 V, ID = 47 A, VGS = 10 V, RGEN = 6 W Qgs Gate to Source Charge VDD = 20 V, ID = 47 A 33 nC Qgd Gate to Drain “Miller” Charge VDD = 20 V, ID = 47 A 16 nC www.onsemi.com 2 FDMS8350LET40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) Symbol Parameter Test Condition Min Typ Max Unit VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V VGS = 0 V, IS = 47 A (Note 2) 0.8 1.3 IF = 47 A, di/dt = 100 A/ms 81 129 ns 82 131 nC DRAIN-SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. NOTES: a) 45°C/W when mounted on a 1 in2 pad of 2 oz copper. b) 115°C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. 3. 4. 5. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. EAS of 1176 mJ is based on starting TJ = 25°C; L = 3 mH, IAS = 28 A, VDD = 40 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 87 A. Pulsed Id please refer to Fig 11 SOA graph for more details. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. ORDERING INFORMATION Device Marking Package Reel Size Tape Width Quantity FDMS8350LET40 FDMS8350LET Power 56 13″ 12 mm 3000 units www.onsemi.com 3 FDMS8350LET40 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 320 ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V 240 VGS = 3.5 V VGS = 4 V 160 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 80 VGS = 3 V 0 0.0 0.5 1.0 1.5 2.0 2.5 15 12 VGS = 3.5 V 9 6 3 0 3.0 0 80 240 320 Figure 6. Normalized On−Resistance vs Drain Current and Gate Voltage 20 ID = 47 A VGS = 10 V rDS(on), DRAIN TO 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 1.6 160 ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics 1.8 VGS = 4.5 V VGS = 10 V VGS = 4 V VDS, DRAIN TO SOURCE VOLTAGE (V) 1.7 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX VGS = 3 V PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 15 ID = 47 A 10 5 TJ = 150 oC TJ = 25 oC 0.7 −75 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATUREo(C) 0 0 2 4 6 8 Figure 3. On−Resistance vs Gate to Source Voltage 320 320 IS, REVERSE DRAIN CURRENT (A) Figure 2. Normalized On−Resistance vs Junction Temperature PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 240 VDS = 5 V TJ = 175 oC TJ = 25 oC 160 TJ = −55oC 80 0 10 VGS, GATE TO SOURCE VOLTAGE (V) 100 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ = 175 oC 1 TJ = 25 oC 0.1 TJ = −55oC 0.01 0.001 0.0 012345 VGS = 0 V 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 4. Transfer Characteristics Figure 5. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 FDMS8350LET40 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 10 100000 VGS, GATE TO SOURCE VOLTAGE (V) ID = 47 A Ciss VDD = 15 V CAPACITANCE (pF) 8 VDD = 20 V 6 VDD = 25 V 4 2 0 10000 Coss 1000 100 0 34 68 102 136 10 0.1 170 Figure 7. Gate Charge Characteristics 10 40 Figure 8. Capacitance vs Drain to Source Voltage 320 200 100 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE (nC) TJ = 25 oC TJ = 125 oC 10 TJ = 150 oC 240 VGS = 10 V 160 VGS = 4.5 V 80 o RqJC = 1.2 C/W 1 0.001 0.01 0.1 1 10 100 0 25 1000 10000 50 75 tAV , TIME IN AVALANCHE (ms) 100 125 150 175 TC, CASE TEMPERATURE (o C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 6000 50000 THIS AREA IS LIMITED BY r DS(on) P(PK), PEAK TRANSIENT POWER (W) 1000 ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 10 m s 100 100 m s 10 1 1 ms SINGLE PULSE TJ = MAX RATED RqJC = 1.2 oC/W TC = 25 oC 0.1 0.01 0.1 10 ms CURVE BENT TO MEASURED DATA 1 10 100 ms/ DC 100 500 10000 SINGLE PULSE RqJC = 1.2 oC/W TC = 25 oC 1000 100 −5 10 −4 10 −3 10 −2 10 −1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 FDMS8350LET40 TYPICAL CHARACTERISTICS r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE (TJ = 25°C unless otherwise noted) 2 1 0.1 0.01 0.001 −5 10 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 1.2 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE −4 10 −3 −2 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 6 −1 10 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN8 5X6, 1.27P CASE 483AG ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13657G PQFN8 5X6, 1.27P DATE 25 JUN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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