FDMS86181E

FDMS86181E MOSFET, N‐Channel, Shielded Gate, POWERTRENCH) 100 V, 124 A, 4.2 mW www.onsemi.com General Description T h i s N −C h a n n e l M V M O S F E T i s p r o d u c e d u s i n g ON Semiconductor ’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode. S D S D S D G D Features • • • • • • • • • Shielded Gate MOSFET Technology Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 44 A Max rDS(on) = 12 mW at VGS = 6 V, ID = 22 A ADD 50% lower Qrr than other MOSFET suppliers Lowers switching noise/EMI MSL1 robust package design 100% UIL tested RoHS Compliant N-Channel MOSFET D Primary DC−DC MOSFET Synchronous Rectifier in DC−DC and AC−DC Motor Drive Solar Parameter S S Value Unit S G VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current: − Continuous TC = 25°C (Note 5) − Continuous TC = 100°C (Note 5) − Continuous TA = 25°C (Note 1a) − Pulsed (Note 4) 124 78 17 510 EAS Single Pulse Avalanche Energy (Note 3) 337 PD Power Dissipation: TC = 25°C TA = 25°C (Note 1a) 125 2.5 TJ, TSTG Operating and Storage Junction Temperature Range D S G D MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol D Pin 1 S Power 56 (PQFN8) CASE 483AE Applications • • • • Bottom S Top A $Y &Z &3 &K FDMS86181E D $Y&Z&3&K FDMS 86181E D D D = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code mJ W −55 to +150 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2015 November, 2018 − Rev. 2 1 Publication Order Number: FDMS86181E/D FDMS86181E PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Quantity FDMS86181E FDMS86181E Power 56 (PQFN8) (Pb-Free / Halogen Free) 3000/Tape&Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS Symbol Parameter Value Unit °C/W RqJC Thermal Resistance, Junction to Case 1.0 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 50 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V DBVDSS /DTJ Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 mA IGSS Gate to Source Leakage Current, Forward VGS = ±20 V, VDS = 0 V 100 nA 4.0 V BVDSS 100 V 60 mV/°C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA DVGS(th) /DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C −9 Static Drain to Source On Resistance VGS = 10 V, ID = 44 A 3.3 4.2 VGS = 6 V, ID = 22 A 5.3 12 VGS = 10 V, ID = 44 A, TJ = 125°C 5.7 7.8 VDS = 10 V, ID = 44 A 116 rDS(on) gFS Forward Transconductance 2.0 3.1 mV/°C mW S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg VDS = 50 V, VGS = 0 V, f = 1 MHz 2945 4125 pF 1730 2425 pF 20 40 pF 1.3 2.6 W 17 31 ns 9 18 ns Turn-Off Delay Time 25 40 ns Fall Time 6 12 ns VGS = 0 V to 10 V, VDD = 50 V, ID = 44 A 42 59 nC VGS = 0 V to 6 V, VDD = 50 V, ID = 44 A 27 38 nC VDD = 50 V, ID = 44 A 13 nC 9.3 nC Gate Resistance f = 1MHz 0.1 SWITCHING CHARACTERISTICS td(on) tr td(off) tf Qg Turn-On Delay Time Rise Time Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 44 A, VGS = 10 V, RGEN = 6 W www.onsemi.com 2 FDMS86181E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) Symbol Parameter Test Condition Min Typ Max Unit VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V VGS = 0 V, IS = 44 A (Note 2) 0.8 1.3 IF = 20 A, di/dt = 300 A/ms 32 52 ns 57 92 nC DRAIN-SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 20 A, di/dt = 1000 A/ms 25 40 ns 158 253 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined by the user’s board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. EAS of 337 mJ is based on starting TJ = 25°C, N−ch: L = 3 mH, IAS = 15 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 49 A. Pulsed Id please refer to Figure 11 SOA graph for more details. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) VGS = 10 V 6 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 250 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 300 ID , DRAIN CURRENT (A) 2. 3. 4. 5. VGS = 8 V 200 VGS = 6.5 V 150 VGS = 6 V 100 VGS = 5 V 50 0 0 1 2 3 4 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics VGS = 5 V VGS = 6 V 4 VGS = 6.5 V 2 0 VGS = 8 V VGS = 10 V 0 50 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 100 150 200 250 ID, DRAIN CURRENT (A) 300 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage www.onsemi.com 3 FDMS86181E TYPICAL CHARACTERISTICS (continued) 2.0 30 ID = 44 A VGS = 10 V 1.8 r DS(on) , DRAIN TO SOURCE ON−RESISTANCE(mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE (TJ = 25°C unless otherwise noted) 1.6 1.4 1.2 1.0 0.8 0.6 −75 −50 −25 0 25 50 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 25 ID = 44 A 20 15 10 TJ = 125 oC 5 T = 25 oC 0 0 75 100 125 150 50 TJ, JUNCTION TEMPERATURE (5C) I D , DRAIN CURRENT (A) PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 250 VDS = 5 V 200 150 100 TJ = 150 oC TJ = 25 oC 50 0 TJ = −55oC 2 4 300 6 1 TJ = 150 oC 0.1 8 TJ = 25 oC 0.01 TJ = −55oC 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs. Source Current 10000 ID = 44 A Ciss VDD = 50 V 8 CAPACITANCE (pF) VGS , GATE TO SOURCE VOLTAGE (V) 250 10 Figure 5. Transfer Characteristics VDD = 25 V 6 VDD = 75 V 4 2 0 200 300 100 VGS = 0 V VGS , GATE TO SOURCE VOLTAGE (V) 10 150 Figure 4. On−Resistance vs. Gate to Source Voltage I S , REVERSE DRAIN CURRENT (A) Figure 3. Normalized On Resistance vs. Junction Temperature 300 100 VGS, GATE TO SOURCE VOLTAGE (V) 0 10 20 30 Qg , GATE CHARGE (nC) 40 1000 Coss 100 10 1 0.1 50 Crss f = 1 MHz VGS = 0 V 1 10 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage www.onsemi.com 4 100 FDMS86181E TYPICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) 140 o RqJC = 1.0 C/W 120 ID , DRAIN CURRENT (A) IAS , AVALANCHE CURRENT (A) 100 10 TJ = 100 oC TJ = 125 oC 1 0.01 0.1 VGS = 10 V 100 T J = 25 oC 1 80 60 VGS = 6 V 40 20 10 0 25 100 50 Figure 9. Unclamped Inductive Switching Capability 10 m s THIS AREA IS LIMITED BY rDS(on) 100 m s SINGLE PULSE TJ = MAX RATED 1 ms RqJC = 1.0 oC/W 0.1 0.1 P(PK), PEAK TRANSIENT POWER (W) ID , DRAIN CURRENT (A) 100 1 TC = 25 oC 10 ms CURVE BENT TO MEASURED DATA 1 10 100 125 150 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 1000 10 75 Tc , CASE TEMPERATURE ( oC) tAV , TIME IN AVALANCHE (ms) DC 100 500 20000 SINGLE PULSE RqJC = 1.0 oC/W 10000 TC = 25 oC 1000 100 10 −5 10 −4 −3 10 −2 10 10 1 −1 10 VDS , DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE,ZsJA 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 1.0 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 −5 10 −4 10 −3 −2 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve www.onsemi.com 5 −1 10 1 FDMS86181E PACKAGE DIMENSIONS PQFN8 5X6, 1.27P CASE 483AE ISSUE A www.onsemi.com 6 FDMS86181E POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and or other countries. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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