FDMS86300DC
POWERTRENCH) MOSFET,
N-Channel, DUAL COOL) 56
80 V, 110 A, 3.1 mW
General Description
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This N−Channel MOSFET is produced using Fairchild
Semiconductor’s advanced POWERTRENCH® process that
incorporates Shielded Gate technology. Advancements in both silicon
and DUAL COOL® package technologies have been combined to
offer the lowest rDS(on) while maintaining excellent switching
performance by extremely low Junction−to−Ambient thermal
resistance.
ELECTRICAL CONNECTION
Features
•
•
•
•
•
•
DUAL COOL Top Side Cooling PQFN package
Max rDS(on) = 3.1 mW at VGS = 10 V, ID = 24 A
Max rDS(on) = 4.0 mW at VGS = 8 V, ID = 21 A
High performance technology for extremely low rDS(on)
100% UIL Tested
RoHS Compliant
S
D
S
D
S
D
G
D
N-Channel MOSFET
D
D
D
D
Pin 1
G
S
S
Top
Typical Applications
S
Pin 1
Bottom
DFN8 5.1x6.15
(Dual Cool 56)
CASE 506EG
• Synchronous Rectifier for DC/DC Converters
• Telecom Secondary Side Rectification
• High End Server/Workstation Vcore Low Side
MARKING DIAGRAM
XXXXXX
A
Y
WW
ZZ
= Device Code
= Assy Location
= Year Code
= Work Week Code
= Assy Lot Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
© Semiconductor Components Industries, LLC, 2013
May, 2019 − Rev. 2
1
Publication Order Number:
FDMS86300DC/D
FDMS86300DC
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Shipping†
86300
FDMS86300DC
UDFN8
13”
12 mm
3000 Units/
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Units
VDS
Drain to Source Voltage
80
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
110
A
−Continuous
TC = 25°C
−Continuous
TA = 25°C
−Pulsed
EAS
Single Pulse Avalanche Energy
PD
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
TJ, TSTG
(Note 1a)
24
(Note 2)
260
(Note 3)
240
mJ
125
W
3.2
(Note 1a)
−55 to +150
Operating and Storage Junction Temperature Range
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
OFF CHARACTERISTICS
Drain to Source Breakdown Voltage
ID = 250 mA, VGS = 0 V
Breakdown Voltage Temperature
Coefficient
ID = 250 mA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 64 V, VGS = 0 V
1
mA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
BVDSS
DBV DSS
DT J
80
V
45
mV/°C
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 mA
DV GS(th)
DT J
Gate to Source Threshold Voltage Temperature Coefficient
ID = 250 mA, referenced to 25°C
−11
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 24 A
2.6
3.1
VGS = 8 V, ID = 21 A
3.1
4.0
VGS = 10 V, ID = 24 A, TJ = 125°C
4.1
5.0
gFS
Forward Transconductance
2.5
3.3
4.5
79
VDD = 10 V, ID = 24 A
V
mV/°C
mW
S
DYNAMIC CHARACTERISTICS
VDS = 40 V, VGS = 0 V, f = 1 MHz
5265
7005
pF
Output Capacitance
929
1235
pF
CRSS
Reverse Transfer Capacitance
21
50
pF
RG
Gate Resistance
1.2
2.6
W
CISS
Input Capacitance
COSS
0.1
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FDMS86300DC
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
29
47
ns
25
44
ns
SWITCHING CHARACTERISTICS
VDD = 40 V, ID = 24 A,
VGS = 10 V, RGEN = 6 W
td(ON)
Turn*On Delay Time
tr
Rise Time
tD(OFF)
Turn*Off Delay Time
35
57
ns
tf
Fall Time
9
18
ns
Qg(TOT)
Total Gate Charge
72
101
nC
59
84
nC
VGS = 0 V to 10 V
VGS = 0 V to 8 V
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain ”Miller” Charge
VDD = 40 V,
ID = 24 A
26
nC
14
nC
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
IS
Source to Drain Diode Forward Voltage
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.7 A
(Note 2)
0.72
1.2
VGS = 0 V, IS = 24 A
(Note 2)
0.80
1.3
75
TC = 25°C
V
V
150
trr
Reverse Recovery Time
Qrr
IF = 24 A, di/dt = 100 A/ms
Reverse Recovery Charge
56
88
ns
42
67
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Units
°C/W
RqJC
Thermal Resistance, Junction to Case
(Top Source)
2.3
RqJC
Thermal Resistance, Junction to Case
(Bottom Drain)
1.0
RqJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RqJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RqJA
Thermal Resistance, Junction to Ambient
(Note 1c)
27
RqJA
Thermal Resistance, Junction to Ambient
(Note 1d)
34
RqJA
Thermal Resistance, Junction to Ambient
(Note 1e)
16
RqJA
Thermal Resistance, Junction to Ambient
(Note 1f)
19
RqJA
Thermal Resistance, Junction to Ambient
(Note 1g)
26
RqJA
Thermal Resistance, Junction to Ambient
(Note 1h)
61
RqJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RqJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RqJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
RqJA
Thermal Resistance, Junction to Ambient
(Note 1l)
13
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FDMS86300DC
NOTES:
1. RqJA is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. RqJC is guaranteed by
design while RqCA is determined by the user’s board design.
b) 81°C/W when mounted on
a minimum pad of 2 oz copper.
a) 38°C/W when mounted on
a 1 in2 pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
c) Still air, 20.9×10.4×12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d) Still air, 20.9×10.4×12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
e) Still air, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper
f) Still air, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
g) .200FPM Airflow, No Heat Sink, 1 in2 pad of 2 oz copper
h) .200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i) .200FPM Airflow, 20.9×10.4×12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j) .200FPM Airflow, 20.9×10.4×12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
k) .200FPM Airflow, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper
l) .200FPM Airflow, 45.2×41.4×11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting TJ = 25_C; N−ch: L = 0.3 mH, IAS = 40 A, VDD = 72 V, VGS = 10 V.
ID, DRAIN CURRENT (A)
260
VGS = 10 V
VGS = 8 V
208
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
VGS = 7 V
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
156
VGS = 6.5 V
104
VGS = 6 V
52
VGS = 5.5 V
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
6
VGS = 5.5 V
5
VGS = 6 V
4
PULSE DURATION = 80m s
DUTY CYCLE = 0.5% MAX
VGS = 6.5 V
3
VGS = 7 V
2
1
VGS = 8 V
0
0
52
104
156
VGS = 10 V
208
260
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
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FDMS86300DC
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
25
ID = 24 A
VGS = 10 V
1.8
rDS(on) , DRAIN TO
1.6
1.4
1.2
1.0
0.8
SOURCE ON−RESISTANCE(mW)
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
2.0
ID = 24 A
20
15
TJ = 125 oC
10
5
0
0.6
−75 −50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE oC
()
TJ = 25 oC
4
5
PULSE DURATION = 80m s
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
208
VDS = 5 V
156
T J = 150 oC
104
TJ = 25 oC
52
T J = −55 oC
0
3
4
5
6
7
300
100
7
8
9
10
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = −55oC
0.01
1E−3
0.0
8
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
10
1.2
10000
VDD = 30 V
ID = 24 A
Ciss
8
VDD = 40 V
VDD = 50 V
CAPACITANCE (pF)
VGS , GATE TO SOURCE VOLTAGE (V)
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance
vs. Gate to Source Voltage
IS, REVERSE DRAIN CURRENT (A)
Figure 3. Normalized On Resistance
vs. Junction Temperature
260
PULSE DURATION = 80m s
DUTY CYCLE = 0.5% MAX
6
4
1000
Coss
Crss
100
2
f = 1 MHz
10 VGS = 0 V
0
0
20
40
60
5
0.1
80
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
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5
80
FDMS86300DC
160
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
100
TJ = 25 oC
10
TJ = 100 oC
TJ =
1
0.01
0.1
1
125 oC
VGS = 10 V
100
80
Limited by Package
60
RqJC = 1.0 C/W
40
20
10
100
0
25
500
50
100
125
150
TC, CASE TEMPERATURE C( )
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
10000
P(PK), PEAK TRANSIENT POWER (W)
1000
I D, DRAIN CURRENT (A)
75
o
tAV, TIME IN AVALANCHE (ms)
100
SINGLE PULSE
RqJA = 81 oC/W
o
1000
100 us
10
THIS AREA IS
1 ms
1 LIMITED BY r
DS(on)
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
0.1
RqJA = 81 oC/W
0.01
0.01
TA = 25 oC
1s
10 s
CURVE BENT TO
MEASURED DATA
0.1
1
DC
10
100200
TA = 25 C
100
10
1 −4
10
−3
10
0.1
0.01
10
10
0
100
1
10
1000
Figure 12. Single Pulse Maximum
Power Dissipation
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
ZqJA(t) = r(t) x R
SINGLE PULSE
0.001
0.0001 −4
10
−1
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
2
1
−2
10
VDS, DRAIN to SOURCE VOLTAGE (V)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
=8V
o
qJA
RqJA = 81 5C/W
Peak TJ = P DM x Z qJA(t) + T A
Duty Cycle, D = t1 / t 2
−3
10
−2
10
10
−1
0
10
10
1
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Transient Thermal Response Curve
POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries
in the United States and/or other countries.
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