FDMS7650DC

MOSFET – N-Channel, DUAL COOL) 56, POWERTRENCH) 30 V, 100 A, 0.99 mW FDMS7650DC www.onsemi.com General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Pin 1 D Features • • • • • D Top DUAL COOL Top Side Cooling PQFN package Max rDS(on) = 0.99 mW at VGS = 10 V, ID = 36 A Max rDS(on) = 1.55 mW at VGS = 4.5 V, ID = 32 A High performance technology for extremely low rDS(on) This Device is Pb−Free and is RoHS Compliant D S S S G D Bottom DFN8 5x6.15, 1.27P, DUAL COOL 56 CASE 506EG MARKING DIAGRAM AYWWZZ 7650 7650 A Y WW ZZ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code D 5 4 G D 6 3 S D 7 2 S D 8 1 S N−Channel MOSFET ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2012 September, 2020 − Rev. 2 1 Publication Order Number: FDMS7650DC/D FDMS7650DC MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Rating Unit VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage (Note 4) +20 V TC = 25°C 100 A − Continuous (Silicon limited) TC = 25°C 289 − Continuous TA = 25 °C (Note 1a) 47 ID Parameter Drain Current − Continuous (Package limited) − Pulsed 200 EAS Single Pulse Avalanche Energy (Note 3) 578 mJ dv/dt Peak Diode Recovery dv/dt (Note 5) 0.5 V/ns W PD TJ, TSTG Power Dissipation TC = 25°C 125 Power Dissipation TA = 25°C (Note 1a) 3.3 Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Rating Unit 2.3 °C/W RqJC Thermal Resistance, Junction to Case (Top Source) RqJC Thermal Resistance, Junction to Case (Bottom Drain) 1 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RqJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RqJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RqJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RqJA Thermal Resistance, Junction to Ambient (Note 1k) 11 www.onsemi.com 2 FDMS7650DC ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit ON CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 30 − − V DBV DSS Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C − 12 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V − − 1 mA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V − − 100 nA 1.1 1.9 2.7 V DT j ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA DV GS(th) Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C − −7 − mV/°C Static Drain to Source On Resistance VGS = 10 V, ID = 36 A − 0.6 0.99 mW VGS = 4.5 V, ID = 32 A − 1 1.55 VGS = 10 V, ID = 36 A, TJ = 125°C − 0.9 1.5 VDS = 5 V, ID = 36 A − 225 − S VDS = 15 V, VGS = 0 V, f = 1 MHz − 11100 14765 pF DT j rDS(on) gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 3440 4575 pF Crss Reverse Transfer Capacitance − 205 310 pF Gate Resistance − 1.3 − W − 29 46 ns − 28 45 ns Turn−Off Delay Time − 81 130 ns Fall Time − 20 32 ns − 147 206 nC − 62 87 nC − 38 − nC − 9.7 − nC VGS = 0 V, IS = 2.1 A (Note 2) − 0.7 1.2 V VGS = 0 V, IS = 36 A (Note 2) − 0.8 1.3 IF = 36 A, di/dt = 100 A/ms − 75 120 ns − 61 98 nC Rg SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn−On Delay Time Rise Time VDD = 15 V, ID = 36 A, VGS = 10 V, RGEN = 6 W VDD = 15 V, ID = 36 A Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 4.5 V Qgs Gate to Source Charge VDD = 15 V, ID = 36 A Qgd Gate to Drain “Miller” Charge DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FDMS7650DC THERMAL CHARACTERISTICS Symbol Parameter Rating Unit 2.3 °C/W RθJC Thermal Resistance, Junction to Case (Top Source) RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 27 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 34 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 61 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 13 NOTES: 1. RqJA is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined by the user’s board design. b. 0°C/W when mounted on a minimum pad of 2 oz copper a. 38°C/W when mounted on a 1 in2 pad of 2 oz copper c. d. e. f. g. h. i. j. k. l. 2. 3. 4. 5. Still air, 20.9 x 10.4 x 12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper Still air, 20.9 x 10.4 x 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper Still air, 45.2 x 41.4 x 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper Still air, 45.2 x 41.4 x 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper 200FPM Airflow, 20.9 x 10.4 x 12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper 200FPM Airflow, 20.9 x 10.4 x 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper 200FPM Airflow, 45.2 x 41.4 x 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper 200FPM Airflow, 45.2 x 41.4 x 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. EAS of 578 mJ is based on starting TJ = 25°C; N−ch: L = 1 mH, IAS = 34 A, VDD = 27 V, VGS = 10 V. As an N−ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ISD ≤ 3 36 A, di/dt 3 100 A/ms, VDD ≤ BVDSS, Starting TJ = 25°C. www.onsemi.com 4 FDMS7650DC ID, DRAIN CURRENT (A) 200 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) VGS = 10 V VGS = 6 V VGS = 4.5 V VGS = 4 V 150 100 VGS = 3.5 V 50 0 0.0 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 4 1 0 1.2 1.0 0.8 0 25 50 VGS = 4.5 V 0 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX ID = 36 A 2 TJ = 125°C 1 TJ = 25°C 0 75 100 125 150 2 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 150°C TJ = 25°C 50 TJ = −55°C 2.0 2.5 3.0 3.5 6 8 10 Figure 4. On−Resistance vs. Gate to Source Voltage VDS = 5 V 0 1.5 4 VGS, GAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 100 200 3 Figure 3. Normalized On Resistance vs. Junction Temperature 150 50 100 150 ID, DRAIN CURRENT (A) 4 TJ, JUNCTION TEMPERATURE (°C) 200 VGS = 10 V VGS = 6 V Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage ID = 36 A VGS = 10 V 0.6 −75 −50 −25 VGS = 4 V 2 rDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 1.4 VGS = 3.5 V 3 Figure 1. On Region Characteristics 1.6 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 200 100 VGS = 0 V 10 TJ = 150°C 1 TJ = 25°C 0.1 0.01 TJ = −55°C 0.001 0.0 4.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GAIN TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Voltage vs. Source Current www.onsemi.com 5 FDMS7650DC 10 50000 ID = 36 A 8 VDD = 10 V 6 VDD = 15 V 4 VDD = 20 V 2 0 0 30 60 Ciss 10000 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 90 120 Coss 1000 100 0.1 160 Qg, GATE CHARGE (nC) 300 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 40 TJ = 25°C 10 TJ = 125°C 0.1 1 TJ = 100°C 10 100 VGS = 10 V 200 VGS = 4.5 V 150 100 50 Limited by Package 0 25 1000 10000 75 100 125 150 P(PK), PEAK TRANSFER POWER (W) Figure 10. Maximum Continuous Drain Current vs. Case Temperature 500 100 10 1 ms 10 ms 100 ms 1s 10 s DC 10 50 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE 0.1 TJ = MAX RATED RqJA = 81°C/W TA = 25°C 0.01 0.01 0.1 1 30 RqJC = 1.0°C/W 250 tAV, TIME IN AVALANCHE (ms) 1 10 Figure 8. Capacitance vs. Drain to Source Voltage 100 ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 1 0.01 Crss f = 1 MHz VGS = 0 V 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area 2000 1000 SINGLE PULSE RqJA = 81°C/W TA = 25°C 100 10 1 −3 10 −2 10 −1 10 1 10 t, PULSE WIDTH (sec) 100 Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 6 1000 FDMS7650DC TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) NORMALIZED THERMAL IMPEDANCE, ZqJA 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 NOTES: DUTY FACTOR: D = t1 / t2 PEAK TJ = PDM x ZqJA x RqJA + TA SINGLE PULSE RqJA = 81°C/W 0.001 −3 10 −2 10 t2 −1 10 1 0 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Ambient Transient Thermal Response Curve ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Shipping† FDMS7650DC 7650 DFN8 5x6.15, 1.27P, DUAL COOL 56 (Pb−Free) 13” 12 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DUAL COOL and POWERTRENCH are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6.15, 1.27P, DUAL COOL CASE 506EG ISSUE D DATE 25 AUG 2020 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXX ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ DOCUMENT NUMBER: DESCRIPTION: XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code 98AON84257G *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN8 5x6.15, 1.27P, DUAL COOL PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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