FDMS86200DC

MOSFET - PowerTrench), N-Channel, Dual CoolE, Shielded Gate 150 V, 40 A, 17 mW FDMS86200DC www.onsemi.com General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. ELECTRICAL CONNECTION S Features • • • • • • • Shielded Gate MOSFET Technology Dual CoolTM Top Side Cooling DFN8 Package Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.3 A Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.8 A High Performance Technology for Extremely Low rDS(on) 100% UIL Tested RoHS Compliant Ratings Unit VGS Gate to Source Voltage ±20 V Drain Current: Continuous, TC = 25°C Continuous, TA = 25°C (Note 1a) Pulsed (Note 4) 40 9.3 100 TJ, TSTG Operating and Storage Junction Temperature Range © Semiconductor Components Industries, LLC, 2016 May, 2020 − Rev. 5 D D S S Pin 1 Bottom MARKING DIAGRAM V Power Dissipation: TC = 25°C TA = 25°C (Note 1a) D DFN8, Dual CoolE CASE 506EG 150 PD S Top Drain to Source Voltage Single Pulse Avalanche Energy (Note 3) D G VDS EAS G Pin 1 MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) ID D D D • Primary MOSFET in DC − DC Converters • Secondary Synchronous Rectifier • Load Switch Parameter S S N-Channel MOSFET Applications Symbol D A 294 mJ W 125 3.2 −55 to +150 °C ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ AYWWZZ 86200 86200 = Specific Device Code A = Assembly Location Y = Year of Production, Last Number WW = Work Week Number ZZ = Assembly Lot Number ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FDMS86200DC/D FDMS86200DC Table 1. THERMAL CHARACTERISTICS Symbol Characteristic Value RqJC Thermal Resistance, Junction to Case (Top Source) 2.5 RqJC Thermal Resistance, Junction to Case (Bottom Drain) 1.0 RqJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RqJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RqJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RqJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RqJA Thermal Resistance, Junction to Ambient (Note 1k) 11 Unit °C/W ORDERING INFORMATION AND PACKAGE MARKING Device Top Marking Package Reel Size Tape Width Shipping† FDMS86200DC 86200 DFN8 13″ 12 mm 3000 Units/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V DBVDSS /DTJ Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 mA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 150 V 105 mV/°C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA DVGS(th) /DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25 °C −11 VGS = 10 V, ID = 9.3 A 14 17 VGS = 6 V, ID = 7.8 A 17 25 VGS = 10 V, ID = 9.3 A, TJ = 125 °C 29 35 VDS = 10 V, ID = 9.3 A 32 rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2.0 3.3 mV/°C mW S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1 MHz 0.1 2110 2955 pF 205 290 pF 8.1 15 pF 1.5 3.0 W 16 29 ns 4 10 ns 23 37 ns 5 10 ns SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 75 V, ID = 9.3 A, VGS = 10 V, RGEN = 6 W Fall Time www.onsemi.com 2 FDMS86200DC ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) Symbol Qg Parameter Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge Test Condition Min Typ Max Unit VGS = 0 V to 10 V, VDD = 75 V, ID = 9.3 A 30 42 nC VGS = 0 V to 5 V, VDD = 75 V, ID = 9.3 A 19 27 nC VDD = 75 V, ID = 9.3 A 9.7 nC 5.6 nC DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 9.3 A (Note 2) 0.8 1.3 VGS = 0 V, IS = 2.6 A (Note 2) 0.7 1.2 79 126 ns 126 176 nC IF = 9.3 A, di/dt = 100 A/ms V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Max RθJC Thermal Resistance, Junction to Case (Top Source) 2.5 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1.0 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 27 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 34 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 61 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 13 Unit °C/W 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined by the user’s board design. www.onsemi.com 3 FDMS86200DC NOTES: RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined by the user’s board design. a) 38°C/W when mounted on a 1 in2 pad of 2 oz copper. b) 81°C/W when mounted on a 1 in2 pad of 2 oz copper. SS SF DS DF G SS SF DS DF G c) d) e) f) g) h) i) j) k) l) Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. EAS of 294 mJ is based on starting TJ = 25_C; N-ch: L = 3 mH, IAS = 14 A, VDD = 150 V. VGS = 10 V, 100% tested at L = 0.3 mH, IAS = 31 A. 4. Pulsed Id limited by junction temperature, td